• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.373-376
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• 1997

Diamond thin films were deposited on P-type(100) Si wafers using MPECVD. Prior to deposition, mechanical scretching was done to improve density of nucleation sites with diamond paste of 0.25${\mu}{\textrm}{m}$ size. Diamond films were deposited under the following conditions : methane concentration of 0.5~5%, oxygen concentration of 0~70%, process pressure of 70Torr, process temperature of 900~95$0^{\circ}C$, and deposition time 5hrs. The changes of the morphology and the growth rates of the deposits with the experimental conditions are expriend by Scanning Electron Microscopy. Raman Spectroscopy and X-ray Diffraction method.

• 자원리싸이클링
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• 제29권1호
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• pp.35-42
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• 2020

최근 인체 유해성이 높은 석면 함유 제품의 다량 폐기로 인해 석면 함유 폐기물(asbestos-containing waste: ACW)이 계속해서 발생하고 있으며, 매립지 부족 등의 이유로 석면 무해화 및 재활용 기술 개발이 요구되고 있다. 마이크로웨이브를 이용한 열처리는 석면 함유 폐기물 무해화에 가장 효율적인 방법이나 석면이 상온에서 마이크로웨이브를 흡수하지 않는 한계점을 가지고 있다. 본 연구에서는 상온에서 마이크로웨이브를 흡수하여 발열하는 무기 발열체인 SiC 플레이트 사이에 석면 함유 폐기물를 위치시킨 상태에서 마이크로웨이브 열처리를 진행하는 방법으로 석면 함유 폐기물를 무해화 하였다. 효율적인 열처리를 위하여 석면 함유 폐기물를 파쇄 및 분쇄 공정을 통해 분말화하여 무해화 열처리 실험을 진행 하였으며, 열처리 조건에 따른 무해화 특성을 파악하기 위하여 마이크로웨이브 열처리 온도와 시간 변수를 조절하였다. 열처리 후 석면 함유 폐기물는 XRD와 SEM을 이용한 결정구조 및 미세구조 분석을 통하여 무해화 특성을 분석 하였다. SiC 플레이트를 적용한 마이크로웨이브 열처리 방법은 단시간 내에 목표 온도까지 가열이 가능하며 최종적으로 1,200℃에서는 60분 이상, 1,300℃에서는 10 분 이상의 마이크로웨이브 열처리를 진행하였을 때 결정구조와 미세구조상에서 석면이 완전히 제거되는 것을 확인하였다.

• 한국세라믹학회지
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• 제54권4호
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• pp.308-313
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• 2017

In this study we examined the photo-degradation efficiency of $CoS_2-G-TiO_2$ nanocomposites under visible light irritation using Reactive Black B (RBB) as standard dye, $CoS_2-G-TiO_2$ nanocomposites synthesized by facial microwave assist technique, and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopic analysis. Our results show the efficiency of the $CoS_2-G-TiO_2$ ternary nanocomposite is better than $CoS_2-G$ and $TiO_2-G$ nanocomposite. The degradation efficiency of $CoS_2-G-TiO_2$ nanocomposite was found approximately 89% of Reactive Black B (RBB) degraded after 180 min. Our results will open new way for the development of a new ternary nanocomposite photocatalytic application.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1997년도 제25회 춘계학술대회
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.30-37
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• 2005

The microwave dielectric properties and their related structural characteristics in solid solutions of (1-$\chi$) Ba($Mg_{1/3}$Nb$_{2/3}$) $O_3$-$\chi$La(Mg$_{2/3}$Nb$_{1}$3) $O_3$(BLMN) have been investigated by measuring the dielectric constant($\varepsilon$r), Q value and temperature coefficient of resonant frequency($\tau$f) and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant($\varepsilon$$_{r}$) showed maximum value at the composition which corresponds to the phase boundary between 1 : 2 ordered and 1 : 1 ordered structure. The increase in $\varepsilon$$_{r}$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency($\tau$$_{f}$) was investigated in terms of oxygen octahedra tilting.dra tilting.

• 한국결정성장학회지
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• 제10권1호
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• pp.66-72
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• 2000

재래식 및 마이크로파 가열법으로 열처리된 $Li_2O_3-SiO_2$계 글라스의 핵 생성 및 결정화 거동을 열분석법(DTA), X-선 회절(XRD), 광학 현미경(OM) 및 전기 전도도의 측정으로 비교 조사하였다. 재래식 및 마이크로피로 열처리된 시료들의 조핵 온도와 최대 핵 생성 온도는 동일하게 각각 460~$500^{\circ}C$와 $580^{\circ}C$이었다. 한편, 재래식에 비하여 마이크로파로 열처리된 시료에서는 부피 핵 생성이 일어나려는 경향이 컸다. 재래식 및 마이크로파로 열처리된 시편들에서 결정의 성장 속도는 결정화 열처리 온도에 비례하여 증가하였지만, 마이크로파 열처리의 경우는 부피 핵 생성 경향 및 물질 확산 효과의 증대에 기인하여 결정 성장을 재래식 보다 빠르게 진행되었다. 재래식 및 마이크로파로 열처리된 시편들의 전기 전도도 값은 각각 1.337~2.299와 0.281~$0.911{\times}10^{-7}\Omega {\textrm}{cm}^{-1}$이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.544-545
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• 2013

Recently, low-temperature atmospheric-pressure plasmas have been investigated [1,2] for biomedical applications and surface treatments. Experiments for improving hydrophilicity of stainless steel (SUS 304) plate with atmospheric microwave argon and H2O2 mixture plasma jet [3] were carried out and experimental measurements and plasma simulations were conducted for investigating the characteristics of plasma for the process. After 30 s of low power (under 10 W) and low temperature (under $50^{\circ}C$) plasma treatment, the water contact angle decreased rapidly to around $10^{\circ}$ from $75^{\circ}$ and was maintained under $30^{\circ}$ for a day (24 hours). The surface free energy, calculated from the contact angles, increased. The chemical properties of the surface were examined by X-ray Photoelectron Spectroscopy (XPS) and the surface morphology and roughness were examined by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. The characteristics of plasma sources with several frequencies were investigated by Optical Emission Spectroscopy (OES) measurement and one-dimensional Particle-in-Cell (PIC) simulation and zero-dimensional global simulation [4]. The relation between plasma components and the efficacy of the surface modification were discussed.

• 공업화학
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• 제27권5호
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• pp.483-489
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• 2016

본 연구에서 쉽고 빠른 마이크로 조사법을 사용하여 합성한 $Cu_2Se$-그래핀 나노복합체를 광촉매 분해 효과를 연구하였다. 제조된 나노복합체는 XRD, SEM, TEM, 라만분광분석, XPS 및 UV-Vis 흡수분광법을 사용하여 특성화하였다. 그리고 광촉매 분해특성을 가시광선 조사하에 표준염료인 로다민 B의 분해를 통하여 연구하였다. $Cu_2Se$-그래핀 복합체는 상당히 우수한 광촉매 분해 효과를 나타내었고, 이는 180 min 동안 가시광선 조사하에서 약 95%의 분해 효과를 나타내고 있음을 이들 결과로부터 알 수 있었다. 결론적으로 $Cu_2Se$-그래핀 복합체는 염료 오염물질에 대한 적합한 촉매로 사용할 수 있음을 확인하였다.

• 열처리공학회지
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• 제21권5호
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• pp.235-243
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• 2008

Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

• 한국응용과학기술학회지
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• 제24권2호
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• pp.167-173
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• 2007

The surface of poly(ethylene naphthalate) film applicable to high temerature insulator for convection microwave oven was modified with silicone coating solutions in the presence of silane crosslinking agent. The structure and properties of the PEN films were investigated by using Fourier transform IR spectroscopy, viscometry, microscopy, and tensile tests. The experimental results showed that the coating with silicone enhanced thermal stability up to $200^{\circ}C$, and slightly lowered the tensile strength and elongation of the PEN films. Judging from dimensional stability results the silicone coated PEN films can not be used for higher temperature insulator above $230^{\circ}C$. Serious dimensional contraction of films was obtained during heat treatment at $250^{\circ}C$ even for 1h. However, the surface of those films still have same chemical structure of silicones. Therefore, If we use PEN film prestretched at $230^{\circ}C$ as base one it will be possible to prepare a high temperature insulator up to $230^{\circ}C$. Conclusively, a silicone coated PEN film can be suitable for the application to convection microwave oven door insulator at high temperature up to $230^{\circ}C$.