• Title/Summary/Keyword: Microwave dielectric resonator

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A study on the Microwave Dielectric Properties of Ba(Mg,Co)(Ta,Nb)$O_3$ Ceramics (Ba(Mg,Co)(Ta,Nb)$O_3$ 세라믹의 마이크로파 유전특성에 관한 연구)

  • Lee, Moon-Kee;Chung, Jang-Ho;Bae, Seon-Gi;Lee, Young-Hi
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.752-754
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    • 1998
  • $Ba(Mg_{(1-x)}Co_x)_{1/3}(Ta_{(1-x)}Nb_x)_{2/3}O_3$ ($x=0.3{\sim}0.6$) ceramics were prepared by the conventional mixed oxide method. The sintering temperature and time were of $1400{\sim}1575[^{\circ}C]$,5[hr.] respectively. The structural and microwave dielectric Properties were investigated with composition ratio and sintering temperature. And then the application for the microwave dielectric resonator was investigated.

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The effect of $Nd_2O_3$ addition on the microwave dielectric properties of the BSST ceramics (BSST계 세라믹스의 마이크로파 유전특성에 미치는 $Nd_2O_3$ 첨가 효과)

  • 박인길;류기원;배선기;이영희
    • Electrical & Electronic Materials
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    • v.9 no.5
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    • pp.439-444
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    • 1996
  • 0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......

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The effect of $Ba^{+2}$ shortage on microwave dielectric characteristics of $Ba_{1-x}$ $(Z $n_{1/3}$T $a_{2/3}$ $O_3$ ceramics (B $a^{+2}$의 결핍에 따른 Ba(Z $n_{1/3}$T $a_{2/3}$ $O_3$ 세라믹스의 고주파 유전특성에 관한 연구)

  • 이문길;이두희;윤현상;김준한;홍재일;박창엽
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.403-408
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    • 1994
  • Dielectric and structural properties of $Ba_{1-x}$(Z $n_{1}$3/T $a_{2}$3/) $O_{3}$+1 mol% Mn $O_{2}$ (x=0, 0.01, 0.02, 0.03, 0.04) ceramics was investigated at microwave frequencies. With $Ba_{+2}$ shortage, the sinterability and the unloaded Q( $Q_{u}$) were much improved, and the ordering in B site and the lattice distortion was greatly enhanced and the structure approached the completely ordered structure. $Q_{u}$ was strongly correlated with these factors such as ordering ratio, lattice distortion and sinterability, and had the maximum value of 7500 at x=0.01. The dielectric constant was near 30 and the temperature coefficient of the resonant frequency was 2 ppm/.deg. C at x=0.01.1.1.1.

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Microwave Properties of HTS Parallel-Plate Sapphire Resonators Designed for the Two-Resonance Mode Method (Two-Resonance Mode 방법용으로 제작된 고온초전도 평행판 사파이어 공진기의 마이크로파 특성)

  • Jung, Ho-Sang;Yang, W.I.;Lee, J.H.;Lee, Sang-Young
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.106-111
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    • 2010
  • Sapphire resonators with $YBa_2Cu_3O_{7-\delta}$ (YBCO) endplates have provided a way to realize extremely high quality factor due to the extremely low dielectric loss of sapphire and conductive loss of YBCO films, which enables to measure the low surface resistance of superconductor films at microwave frequencies. We present microwave properties of HTS sapphire resonators designed for measuring the surface resistance of HTS films at millimeter-wave frequencies by using the two-resonance mode dielectric resonator method. Despite enhanced surface resistance ($R_S$) of YBCO films due to the quadratic frequency dependence of the $R_S$, the unloaded quality factor ($Q_0$) of the $TE_{021}$ mode sapphire resonator still appears to be well above $1\;{\times}\;10^6$ at a mm-wave frequency of 38 GHz at 10 K. However, it appears that the $TE_{012}$ mode $Q_0$ is unexpectedly low despite that the corresponding resonance peak looks uncoupled with parasitic modes. We discuss possible reasons for the unexpected results using the surface resistance at the $TE_{021}$, $TE_{012}$, and $TE_{011}$ mode frequencies.

A Design of Transistor Dielectric Resonantor Oscillator at X-band (X-band용 유전체 공진 발진기의 설계)

  • 김완식;오양현;이종악
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.6 no.2
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    • pp.27-34
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    • 1995
  • In this paper, an X-band TDRO(transistor dielectric resonator oscillator) is designed and experimented with the oscillator constructed. Design of the TDRO is carried out by deriving analycally the coupling parameters between a microstrip line and a dielectric resonator. The coupling parameters take account of the relations among substrate material, ground plane, metallic boundaries surrounding the resonator, distance between a microstrip line and a resonator. Two criteria, external quality factor and coupling coefficient, have been chosen in order to evaluate the performance of the TDRO designed. TDRO studed in this paper may be useful for the application of a microwave system requiring a stable and effective oscillator frequency.

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The structural and Microwave Dielectric Properties of (1-x)Ba($Mg_{1/3}Ta_{2/3})O_3$-xBa($Co_{1/3}Nb_{2/3})O_3$(x=0.25~0.5) Ceramics ((1-x)Ba($Mg_{1/3}Ta_{2/3})O_3$-xBa($Co_{1/3}Nb_{2/3})O_3$(x=0.25~0.5) 세라믹스의 구조 및 마이크로파 유전특성)

  • 황태광;최의선;임인호;이영희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.197-201
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    • 2001
  • The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.

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Concentration of Sodium Chloride Solutions Sensing by Using a Near-Field Microwave Microprobe (비접촉 근접장 마이크로파 현미경을 이용한 NaCl 용액의 농도 측정)

  • Kim, Song-Hui;Yoon, Young-Woon;Babajanyan, Arsen;Kim, Jong-Chul;Lee, Kie-Jin
    • Journal of the Korean Society for Nondestructive Testing
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    • v.27 no.1
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    • pp.23-30
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    • 2007
  • We observed the NaCl concentration of solutions using a near-field microwave microprobe(NFMM). Instead of the usual technique, we take advantage of the noncontact evaluation capabilities of a NFMM. A NFMM with a high Q dielectric resonator allows observation of small variations of the permittivity due to changes in the NaCl concentration. The changes of NaCl concentration due to a change of permittivity of the NaCl solution were investigated by measuring the microwave reflection coefficient $S_{11}$ of the resonator. The NaCl sensor consisted of a dielectric resonator coupled to a probe tip at an operating frequency of about f=4 GHz. The change of the NaCl concentration is directly related to the change of the reflection coefficient due to a near field electromagnetic interaction between the probe tip and the NaCl solution. In order to determine the probe selectivity, we measured a mixture solution of NaCl and glucose.

Structural and Microwave Dielectric Properties of the $0.9MgTiO_3-0.1SrTiO_3$ Ceramics with Sintering Temperature (소결온도에 따른 $0.9MgTiO_3-0.1SrTiO_3$ 세라믹스의 구조 및 마이크로파 유전특성)

  • Choe, Ui-Seon;Lee, Mun-Gi;Ryu, Gi-Won;Bae, Seon-Gi;Lee, Yeong-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.5
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    • pp.294-298
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    • 2000
  • The $MgTiO_3\; and \;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were fabricated by the conventional mixed-oxide method. The sintering temperature and time were $1300^{\circ}C~1600^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated with sintering temperature and the application for the satellite communication microwave dielectric resonator was investigated. The coexistence of cubic $SrTiO_3$ and hexagonal TEX>$MgTiO_3$ structures in $0.9MgTiO_3-0.1SrTiO_3$ ceramics were found from X-ray diffraction patterns. In the case of $MgTiO_3$ ceramics, sphere phase and needle-like phase were coexisted. The $0.9MgTiO_3-0.1SrTiO_3$ ceramics observed sphere phase. The dielectric constants and temperature coefficient of resonant $frequency(\tauf)$ were increased with addition of $SrTiO_3$ but the quality factor was decreased. The dielectric constant, quality factor and $\tau$f of the;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were 22.61, 10.928(at 1GHz) and $+50.26ppm/^{\circ}C$, respectively.

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The Study of Near-field Scanning Microwave Microscope for the Nondestructive Detection System (비파괴 측정을 위한 근접장 마이크로파 현미경 연구)

  • Kim, Joo-Young;Kim, Song-Hui;Yoo, Hyun-Jun;Yang, Jong-Il;Yoo, Hyung-Keun;Yu, Kyong-Son;Kim, Seung-Wan;Lee, Kie-Jin
    • Journal of the Korean Society for Nondestructive Testing
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    • v.24 no.5
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    • pp.508-517
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    • 2004
  • We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.

Study on the Microwave Dielectric properties in the Dielectric Rod Resonator Method (유전체 원주공진기법에 의한 고주파 유전특성 측정에 관한 연구)

  • Kim, Kyung-Yong;Kim, Wang-Sup;Choi, Hwan
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.471-481
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    • 1995
  • Measurement factors for the dielectric properties of low dielectric loss materials (tan${\dalta}{\le}10^{-4}$) were investigated using the dielectric rod resonator method. It was shown that the relative conductivity (${\sigma}_{r}$) should be controlled within a 5% to obtain the standard deviations of less than 0.07 for permittivity .epsilon.r and 0.06${\times}10^{-4}$ for tan.delta.respectively. Surface resistivity (R$_s$) could be reduced when the surface roughness of parallelled conducting plate was less than 0.07 .mu.m. Measurement error for the permittivity was $\pm$0.02% independent of probe loop size, whereas the error in Q value was reduced with the decrease in probe loop size and also with the increase in the absolute values of Q. Reliable Q values were determined with the probe loop size of less than 4mm. The accurate for the distance between the measuring probe loop and the sample could be obtained when the insertion loss of resonant frequency ranged -15dB - -30dB.

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