• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.17 no.5
• /
• pp.353-360
• /
• 1984

As an effort to expand the utilization of mackerel which has been thought disadvantageous to processors due to the defects in bloody dark color of meat, high content of lipid, and low stability of protein, and to develope a new type of product, so called, preservative fish meat paste, the processing method was studied in which dielectric heating was applied by means of cooking, pasteurization, dehydration, and control of water activity. The principle of this method is based on that dielectric heating can initiate a rapid dispersion or displacement of moisture in the meat tissue so that the level of water acivity can be controlled by dehydration with hot air meanwhile the product is cooked, pasteurized, and texturized. And the product is finally heated with electric heaters and vacuum sealed to stabilize water activity and storage stability. In present paper, a formula for preparing the fish meat-stach paste, the conditions of dielectric heating and dehydration, shape and size of the product, and other parameters were tested to optimize the process operation. A formula of the fish meat-starch paste to provide proper textural properties and water activity was $10\%$ starch, $1.5\%$ salt, $3\%$ soybean, $0.6\%$ MSG, $2\%$ sucrose, and $3\%$ sorbitol against the weight of fish meat. A proper shape and size of the product to avoid foaming and case hardening during heating was sliced disc of 8 cm $diameter{\times}0.8$ cm thickness or $10{\times}10$ cm square plate with 1.0 cm thickness. The disc shape was recommended because it resulted more uniform heating, minimum foaming and case hardening. And it was also advantageous that disc was simply provided when the fish meat disc was stuffed in the same, solidified in boiling water for 2 to 3 minutes, and sliced. Condition of dielectric heating was critical to decide the levels of sterility, water activity, and textural property of the product. The temperature at the center of the meat disc slices was raised up to $95^{\circ}C$ in 1.5 minutes so that continuous exposure to microwave caused expanded tissue and hardening ending up with a higher water content. Heating for 5 to 6 minutes was adequate to yield the final water activity of 0.86 to 0.83(35 to $40\%$ moisture). It is important, however, that heating had to be done periodically, for instance, in the manner of 2.0, 1.5, 1.5, and 1.0 minute to give enough time to displace or evaporate moisture from the meat tissue. The product was dehydrated for 2 to 3 minutes by hot air of $60^{\circ}C$, 3 to 5m/sec and finally exposed to electric heaters for 5 to 6 minutes until the surface was roasted deep brown. These conditions of heating and dehydration resulted in a complete reduction of total plate count from an initial count of $5.3{\times}10^6/g$ to less than $3{\times}10^2/g$. General composition of the product was $40.1\%$ moisture, $20.8\%$ protein, $17.4\%$ lipid, $16.2\%$ carbohydrate, and $5.5\%$ ash. Textural properties revealed folding test AA, hardness 42, cohesiveness 0.53, toughness 4.6, and elasticity 0.8.

• Korean Journal of Materials Research
• /
• v.7 no.10
• /
• pp.872-876
• /
• 1997

(1-x)CaTi $O_{3}$-xLa(Z $n_{1}$2/ $Ti_{1}$2/) $O_{3}$의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍ $f_{0}$는 증가하였다. 그 결과 x=0.5인 (C $a_{0.5}$L $a_{0.5}$)( $Ti_{0.75}$Z $n_{0.25}$) $O_{3}$의 조성에서 $\varepsilon$$_{r}$=51, Qㆍ $f_{0}$=38,000 (at 7 GHz), $\tau$$_{f}$=+5ppm/$^{\circ}C$의 유전특성이 나타났다. (C $a_{0.5}$L $a_{0.5}$)( $Ti_{0.75}$Z $n_{0.25}$) $O_{3}$조성의 소결온도를 저하시키기 위하여 B $i_{2}$ $O_{3}$를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76B $i_{2}$ $O_{3}$-0.24NiO가 첨가된 경우 소결온도는 15$0^{\circ}C$ 낮아졌으며, 비유전율 ($\varepsilon$$_{r}$), 공진주파수의 온도계수($\tau$$_{f}$), Qㆍ $f_{0}$가 각각 50+5ppm/$^{\circ}C$, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76B $i_{2}$ $O_{3}$-0.24NiO가 첨가된 경우 소결온도는 20$0^{\circ}C$ 저하되었고, 비유전율 ($\varepsilon$$_{r}$)과 공진주파수의 온도계수 ($\tau$$_{f}$)는 변하기 않았으나, Qㆍ $f_{0}$값이 38,000에서 25,000으로 저하되었다. 25,000으로 저하되었다.되었다.되었다.되었다.

• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.1
• /
• pp.27-32
• /
• 2001

The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.611-614
• /
• 2004

[ $Ba(Zn_{1/3}Nb_{2/3})O_3$ ] (BZN) 세라믹스의 소결 온도는 약 $1350^{\circ}C$ 이다. 그러나 $B_2O_3$가 첨가된 경우, BZN 세라믹스는 $900^{\circ}C$에서 소결되었다. $BaB_4O_7$, $BaB_2O_4$ 그리고 $BaNb_2O_6$ 이차상이 $B_2O_3$가 첨가된 BZN 세라믹스에서 관찰되었다. $BaB_4O_7$과 $BaB_2O_4$ 이차상은 약 $900^{\circ}C$에서 공정 온도를 가지기 때문에 $B_2O_3$를 첨가한 BZN 세라믹스론 $900^{\circ}C$에서 소결하는 동안 액상으로 존재할 것으로 여겨지며, 그것이 BZN 세라믹스의 소결온도를 낮출 것으로 생각된다. 소결 온도의 증가에 따라 유전 상수 ($\varepsilon_r$)와 품질 계수 ($Q{\times}f$)의 값은 증가하였는데, 이는 밀도의 증가에 기인한다. 그러나 $B_2O_3$의 첨가량이 많은 경우 Q 값은 감소하는데, 이는 이차상의 존재가 품질계수의 저하를 초래한다고 생각된다. 2.0 mol% $B_2O_3$가 첨가된 BZN 세라믹스를 $950^{\circ}C$에서 2시간 동안 소결하는 경우, $Q{\times}f$=13.600 GHz, $\varepsilon_r$=37.6 그리고 공진 주파수 온도계수 ($\tau_f$) = 19 ppm/$^{\circ}C$의 유전특성을 얻을 수 있었다.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.15 no.4
• /
• pp.291-297
• /
• 1982

In this part of the studies on dielectric dehydration of foamed fish-starch paste, qualify stability and shelf-life of the product of which the preparation formula and processing conditions were described in previous report (Lee et al, 1982) were determined by means of accelerated reaction test. The product was stored for 50 days under the conditions of temperatures at 35, 45, and $55^{\circ}C$ in steady state and various water activities of 0.44, 0.52, 0.65, and 0.75, respectively. The loss of available lysine, extent of TBA value, and development of browning during the storage were measured and reaction kinetically analysed to assess quality stability and shelf-life of the product for the storage at room temperature of $25^{\circ}C$. Extent of browning was accelerated with the increase of water activity and temperature marking the time to reach a limit of color and flavor deterioration, or to reach brown color density of 0.17 O.D./g at 420 nm, 106 days at aw=0.44, $35^{\circ}C$, and 41 days at aw=0,65, $55^{\circ}C$, These reaction rates resulted in a prediction of shelf-life, 130 to 110 days in the storage at aw=0.44 to 0.75, $25^{\circ}C$. The quality limit assessed by TBA values and sensory evaluation of rancidity was 87 days at aw=0.44, $35^{\circ}C$, and 30 days at aw=0.75, $55^{\circ}C$ which gave a predicted shelf-life, 128 to 113 days . at aw=0.44 to 0.75, $25^{\circ}C$ storage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.58-58
• /
• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Fire Science and Engineering
• /
• v.25 no.6
• /
• pp.21-26
• /
• 2011

The purpose of this paper is to present the damage patterns of cellular phone (SCH_W830) batteries according to energy sources and have them utilized as data for the settlement of disputes between manufactures and consumers. The reliability was secured by maintaining the ambient temperature and humidity at $22{\pm}2^{\circ}C$ and 40~60 %, respectively. The voltage of the battery used for the tests was measured to be 4.18V between positive pole (+) and negative pole (-)(1), and 4.19 V between positive pole (+) and negative pole (-)(2). This study applied the Korean Industrial Standard (KS) to the flammability test of cellular phones due to a general flame applied to them and found that no damage occurred to the built-in battery even though the flame was applied to the cases of cellular phones for 30 seconds. From the results of immersing the cellular phones in the saline solution (NaCl, 0.9 %) for 180 seconds, it was found that there was a trace of carbonization and melting due to the heat caused by leaking current. It can be seen that when the cellular phones were heated for 70 seconds using a microwave oven (MWO), the areas containing the metal holder, recharging connector, antenna, etc., were melted and discolored and that other areas showed no particular problems. That is, while the external carbonization of cellular phones, built-in metals and dielectric materials, and damage and deformation of the battery terminal block, etc., occurred differently depending on the types of energy sources, the voltage showed comparatively constant characteristics. Therefore, it is thought to be possible to attribute the cause of damage to the battery by performing analysis taking into consideration comprehensively the characteristics of the flame spread pattern as well as the melting and deformation of metals.

• Korean Journal of Materials Research
• /
• v.18 no.4
• /
• pp.169-174
• /
• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1234-1239
• /
• 1999

Electromagnetic wave asorbing properties of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$, where X was replaced by substitution elements Cu, Mg, Mn, have been studied. The structure, shape, size and magnetic properties of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$ were analyzed by XRD, SEM, VSM. The relative complex permittivity, permeability, and electromagnetic wave absorbing properties were measured by Network Analyzer. The structure, shape, size and magnetization value of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$ were found to be similar in spite of substitution elements. The coercive force and hysteresis-loss showed maximum value when Mg was substituted for X. The dielectric loss(${\varepsilon}_r"/{\varepsilon}_r'$) was found to be maximum value when Mn was substituted for X. Also the magnetic loss(${\mu}_r"/{\mu}_r'$} was found to be maximum with Cu substitution. The electromagnetica wave absorbing property of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$-Rubber composite with 4mm thickness was excellent as over - 40dB at 9GHz, and the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$-Rubber composite with 8mm thickness was over-40dB at 2GHz. Those composites also showed superior microwave absorbing properties.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.23 no.3
• /
• pp.341-348
• /
• 2019

In this paper, a monopole type antenna applicable to WLAN and WiMAX standard frequency bands is designed and fabricated. The proposed antenna is designed to have rectangular ring and rectangular patch based on microstrip feeding for triple band characteristics and inserted two stub in the top of the rectangular ring patch to enhance impedance bandwidth characteristics. The proposed antenna has $18.0mm(2W_1+W_2){\times}33.0mm(L_7+L_8+L_9)$ on a dielectric substrate of $27.0mm(W_1){\times}44mm(L_1){\times}1.0mm$ size. From the fabrication and measurement results, impedance bandwidths of 660MHz (2,08 to 2.74GHz) for 2.4/2.5MHz band, 488MHz (3.40 to 3.88GHz) for 3.5MHz band, and 2,180MHz (4.61 to 6.79GHz) for 5,000MHz band were obtained based on the impedance bandwidth. The proposed antenna also obtained the measured gain and radiation pattern in the anechoic chamber.