• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.3 s.357
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• pp.92-97
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• 2007

Switching mode amplifiers have been studied widely for use at microwave frequency range, and the class E amplifier which is a type of switching mode amplifier offers very high efficiency approaching 100%. In this paper, 2.4GHz microwave class E amplifier with 66% power added efficiency (PAE) and 17.6dBm output has been linearized for use at wireless LAN transmitter, and digital predistortion technique with look up table is applied. With -3dBm input power of wireless LAN, measured output spectrum can meet the required IEEE 802.11g standard spectrum mask, and the digital predistortion output spectrum has been improved by 5dB of ACPR at 20MHz offset from center frequency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.11
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• pp.2238-2248
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• 1994

In this paper, we analyze a Microwave Amplifier Ultra-Wideband charateristic to apply Multi-Giga b/s optical receiver preamplifier in high speed optical communication system. To obtain frequency expanding effect. we analyze the frequency gain degradation effects of capacitances in the GaAs MESFET small-signal equivalent circuit and design Feedback amplifier Module(FAM) which has inductor peaking elements to compensate its effects and to expand frequency band. We derive optimum inductor peaking values in order to get flat gain in frequency band. The input and the output impedances of FAM are matched by Real Frequency Method and we design one and two stage ultra wideband microwave amplifier. With simulation results, it show $6.36\sim6.86dB$ and $9.1\sim10.3dB$ gains and execllent gain flatness in $0.5\sim12GHz$ respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.6
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• pp.665-670
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• 2015

In this paper, We proposed a broadband RF amplifier for Microwave band receiver. We also proposed a broadband RF amplifier, designed by using EM simulation for reliable amplification of the received signal. Connected to a source terminal to via, it minimizes those which are the active elements of source-side oscillation as the operating element in an ideal GND, and a constant gain characteristic in a broadband. The goal of this was to obtain stable amplification characteristics. For implementing this architecture, we designed the broadband(500 MHz ~ 7 GHz) RF amplifier by using commercial GaAs FET, which operate on 720 MHz, 4,595 MHz, and 6,035 MHz by impedance matching. The voltage gain is 10.635 dB ~ 14.407 dB(737.5 MHz ~ 6.0575 GHz), P1dB is 20 dBc of band(1st harmonic/2nd harmonic).

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2003.05a
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• pp.92-96
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• 2003

In this paper, 30 W power Amplifier for IMT-2000 repeater was developed gain flatness and the third IMD (Intermodulation distortion) by Microwave absorber. The absorption ability of the absorber is measured up to -10 ㏈ and -4 ㏈ at 3.6 ㎓, 2.3 ㎓ band respectively. Non using absorber power amplifier has the gain over 57 ㏈, the gain flatness of ${\pm}$0.33 ㏈ and the third IMD of 27 ㏈c at 33.3 W output. Otherwise, using absorber power amplifier has the gain over 58㏈, the gain flatness of less than ${\pm}$0.9, the third IMD over 29 ㏈c at the same output power. As a result, the characteristic of the different type show improvement of 1 ㏈ in gain, 0.3 ㏈ in Gain flatness and 1.77 ㏈c in IMD.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.275-282
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• 1998

In this paper, we designed and fabricated 5-stage microwave solid state power amplifier using balanced amplifier scheme for X-band electronic radar reflector. The used substrate is FR4 and the used active devices are FHX35LC, FLK012WF and FLK022WG. The circuit design and optimization had been carried out through the microwave CAD program CNL2 The measured values show 46dB in gain, input return loss -14.2dB, output return loss -16.6dB and IM3 is 32dBc at designed bandwidth. The measured results are almost agreed with the simulated values.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.18-23
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• 1992

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.264-266
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• 2006

This traveling wave tube amplifier maintenance system was developed for performance of microwave Surveillance radar traveling wave tube amplification parts, and field operation. The Maintenance system is traveling wave tube amplification part RF output waveform measurement and HVPS Voltage adjustment and a maintenance function are offer. The system was developed as an embedded system base it consisted of Linux os which applied a top-down design and visual technique. Therefore change and easy extension of a system. This paper discussed characteristic of maintenance equipment function, composition, and an employment program.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.2
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• pp.101-107
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• 1986

Analysis and design procedure for the low noise amplifier design are presented. A Microwave low noise amplifier is designed and fabricated using packaged GaAs FET at the center frequency of 12GHa. The experimental results with respect to the noise figure and power gain are quite agreeable with the design specifications except that the input and output VSWR are slightly higher than the desingned.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2736-2743
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• 1997

In this paper, the extended finite difference time domain(FDTD) algorithm is applied to carry out full-wave analysis of a microwave amplifier circuit. The active device included in the amplifier is modeled by equivalent current sources. Equivalent current sources are characterizing interaction between electronmagnetic waves and active devices and can be directly incorporated into the FDTD algorithm. To confirm this analysis, an amplifier is implemented. The FDTD simulation shows good agreement with measured results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.195-199
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• 2006

A wideband power amplifier for a frequency hopping radio unit is designed. To obtain higher efficiency, it is designed for the Class B mode overdrived. The broadband transformer and feedback circuits are adapted to obtain broadband characteristics. The designed amplifier is simulated using the ADS, which is a CAD software from HPEEsof, Simulation results of the designed amplifier are well suited for the design specifications. The designed amplifier are fabricated. Measured results of the fabricated amplifier well agreed with the simulation results and are in good agreement with the predicted performance.