• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.270-276
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• 1996

As methane concentration was varied, the textures of diamond films deposited on Si(100)substrate were observed by XRD,SEM and Raman spectroscope. As a result, $O_{2}$ plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100)substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110)surface and the high quality diamond film with FWHM of Raman spectra being 3.8 $cm^{-1}$ / has been grown. As time goes by deposition time, the preferred orientation increases

• 한국진공학회지
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• 제11권4호
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• pp.256-260
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• 2002

Carbon nanotubes on metal(SUS304) substrates were synthesized by using micro-wave plasma-enhanced chemical vapor deposition at $650^{\circ}C$ with gas mixture CH$_4$(11%) and H$_2$(89%). Their structure was investigated by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy was also used to justify the structure and crystallinity of graphite sheets. High-resolution transmission electron microscopy images clearly showed carbon nanotubes to be multwalled. The measured turn-on field and current density obtained from I-V measurement were 4.4 V/$\mu \textrm{m}$ and $8.4\times10^1\mu\textrm{A}/\textrm{cm}^2$, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국진공학회지
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• 제7권3호
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• pp.167-272
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• 1998

ECR plasma CVD를 이용한 SiOF박막은 낮은 유전상수를 가지고 있으며, 기존의 공정과의 정합성이 우수해 다층배선 공정에 채용이 유망한 재료이지만 수분의 흡수로 인한 유전율의 상승과 후속공정의 안정성이 문제점으로 부각되고 있다. 따라서 본 연구에서는 SiOF박막의 내흡습성과 후속공정에서의 안정성을 향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 $300^{\circ}C$일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각 된다.

• 대한화학회지
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• 제45권4호
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• pp.351-356
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• 2001

철, 코발트, 니켈 합금을 이용한 탄소확산-수소플라즈마 에칭법으로 다이아몬드 자체막의 표면을 매우 평탄하게 할 수 있었다. 이 방법에서의 다이아몬드 자체막을 합금과 몰리브데늄 기판 사이에 위치시켜 금속-다이아몬드-몰리브데늄(MDM) 샌드위치 형태의 샘플 세 트를 이루게 하였다. 이 샘플세트를 마이크로 웨이브 플라즈마 장치에 장착하여 수소 플라즈마를 발생시켜서 기판온도가 섭씨 1,000 이상이 되도록 하였다. 이와 같은 과정들은 탄소확산-수소플라즈마 방법이라고 하였다. 다이아몬드 자체막 표면을 에칭한 후 표면 거칠기, 표면형상, 에칭한 다이아몬드 표면속의 불순물의 침투를 조사하였다. 결론적으로, 탄소 확산-수소 플라즈마 에칭법은 전자 디바이스에 응용할 수 있는 매우 평탄한 다이아몬드 표면을 형성시키는 방법임을 알 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.234-234
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• 2011

Electron-neutral collision frequency is one of the important parameters in the plasma physics and in industrial plasma engineering. We can understand the momentum, energy, and charge transport properties of the plasma using electron-neutral collision frequency.[1] The wave-cutoff method is a diagnostic method for the electron density measurement, but the cutoff peak value depends on gas pressure. The wave-cutoff signal becomes unclear as increasing gas pressure. The reason of pressure dependence is that the electron-neutral collision disturbs electron motion so that microwave can propagate through plasma at plasma frequency.[2] Using the pressure dependence of wave-cutoff method we can find the electron-neutral collision frequency. At first we tried to confirm this method using well known gas such as Ar. The cutoff signal decrease as increasing gas pressure (the simulation result). The wave-cutoff signal is unclear at a gas pressure of 500 mTorr. (electron density $1.0{\times}10^{10}/cm^3$, electron temperature 1.7 eV, electron -neutral collision frequency~1 GHz). In this condition, the electron-neutral collision frequency is closed to the wave-cutoff frequency.

• 대한화학회지
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• 제44권6호
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• pp.573-580
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• 2000

MPT는 최근에 개발된 마이크로파 플라즈마로서 수용매에 강하다. 여러 가지의 변형된 형태의 MPT를 개발하여 구조에 따른 플라즈마의 방전되는 형태를 조사한 결과 이중관 토치는 플라즈마 기체를 적게 소모하며 쉽게 플라즈마가 형성되었으나 토치의 끝이 높은 온도에 견디지 못하고 쉽게 상했다. ICP토치와 같은 형태의 삼중관 토치에 석영관을 중심관으로 사용할 때 가장 안정되고 대칭적인 플라즈마를 형성할 수 있었다. 바탕선을 조사해 본 결과 He MPT는 대기 중으로 돌출되어 대기와 많이 혼합되고 질소에 의해 quenching되는 것으로 보여진다. Membrane desolvator를 탈용매화 장치로 사용하여 헬륨 MPT의 감도를 조사해 본 결과 아르곤 MPT와 비교할 때 대부분의 원소에 대해 검출한계가 10배 이상 높았다. 그러나 여기 에너지가 높은 원소는 비교적 효율적으로 검출할 수 있었다. 헬륨 마이크로파 플라즈마는 적은 양의 플라즈마 기체만 필요하여(약 1.6 L/min) 경제적이며 매우 안정된 형태를 보여주었다. 플라즈마의 분광특성을 조사한 결과 들뜸온도 4950K, 전자밀도 $3.28{\times}10^{14}cm^{-3}$로 측정되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.184-184
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• 2012

We proposed a new measurement method of cutoff probe using the reactance spectrum of the plasma in cutoff probe system instead of transmission spectrum. The high accurate reactance spectrum of the plasma which is expected in previous circuit simulation of cutoff probe [1] was measured by using the automatic port extension method of the network analyzer. The measured reactance spectrum is good agreement with E/M wave simulation result (CST Microwave Studio). From the analysis of the measured reactance spectrum based on the circuit modeling, not only the electron density but also electron-neutral collision frequency can be simply obtained. The obtained results of electron density and e-n collision frequency were presented and discussed in wide range of experimental conditions, together with comparison result with previous methods (a previous cutoff probe using transmission spectrum and a single langmuir probe).