• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.305-305
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• 2015

알루미늄 방열판 위에 MPCVD(Microwave Plasma Enhanced Chemical Vapor Deposition) 장치를 이용하여 DC 바이어스 전압을 기판에 인가하면서 $Ar+CH_4$ 가스 분위기에서 증착한 나노결정질 다이아몬드(Nanocrystalline Diamond; NCD) 박막의 방열 특성을 평가하였다. XRD와 Raman spectroscopy를 이용하여 증착된 박막이 NCD인지를 확인하였으며 FE-SEM 및 FIB로 박막의 표면 및 단면의 형상을 관찰하였다. 다이아몬드가 증착된 방열판에 LED를 부착하여 발열시키고 열유동측정기의 하나인 T3-ster를 사용하여 방열 특성을 분석하였다. 기존 알루미늄(Al) 기판(5.55 K/W)보다 다이아몬드 증착(Dia-Al) 기판(3.88 K/W)의 열저항 값이 현저히 작았다, 또한 LED 접합온도는 Dia-Al 기판이 Al 기판보다 약 $3.5^{\circ}C$만큼 낮았다. 적외선 열화상 카메라로 발열 중인 시편의 전면과 후면을 촬영한 결과, LED가 부착된 전면부에서는 최고 발열 부위(hot spot)의 면적이 Al 기판의 경우가 Dia-Al 기판보다 높았고, 후면부에서는 그 반대의 경향을 보였다. 이들 데이터로부터 다이아몬드 증착 방열판이 기존의 방열판보다 방열특성이 우수한 것으로 해석할 수 있으며, 다이아몬드 박막을 방열판으로 사용하면 LED의 사용 수명과 효율이 높아질 것으로 기대된다.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.366-369
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• 1999

Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

• Proceedings of the KIEE Conference
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.73-74
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• 2006

Carbon nanotubes (CNTs) have recently attracted great attention because of their excellent physical properties, such as high mechanical strength, thermal stability, and electronic properties. These useful properties of carbon nanotubes make themselves good candidates for various application field, such as a transistor, battery, field emission display, nanoscale inter-connects, and so on. Gas-phase techniques offer the unique ability to synthesize well-oriented arrays of CNTs. However, it is seldom reported that the pressure influences on the growth of CNTs under low substrate temperature. In this work, the effect of the working pressure and the influence of the catalyst preparation on the properties of CNTs grown by microwave plasma chemical vapor deposition (MPCVD) were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.569-572
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• 2001

Selective, highly stable determination of epinephrine(adrenalin) was achieved in cyclic voltammetric measurement carried out at electrochemically treated conductive boron-doped diamond electrode. Boron-doped diamond electrodes were prepared on single crystal Si wafers by microwave plasma chemical vapor deposition and B$_2$O$_3$ was dissolved in acetone/methanol(1:1) mixture solution so that the B/C weight ratio ca. 10$^3$ppm.. Epinephrine is a kind of catecholamines, which secreted from adrenal marrow cells. The serious problem to detection of epinephrine is the interference phenomena of electroactive constituent, including AA. In this study, electrochemical treatment of BDD was carried out to discriminate between epinephrine and AA responses. Experimental results showed that the peak potential of AA oxidation shift to the positive direction and the oxidation peak of epinephrine was unchanged. The effect of electrochemical treatment was maintained up to 40hrs.

• Journal of the Korean institute of surface engineering
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• 제29권5호
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• pp.505-511
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• 1996

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

• Proceedings of the KIEE Conference
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1995-1997
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• 2005

마이크로웨이브 화학기상 증착방식으로 탄소 나노튜브를 성장시켰다. 탄소나노튜브를 성장시키기 위한 가스로는 수소$(H_2)$와 메탄$(CH_4)$ 가스를 사용했으며, 실리콘 기판에 마그네트론 스퍼터링 방식으로 10nm 두께의 Ni층과 adhesion 충으로 사용되는 20nm 두께의 Ti층을 증착하였다. 본 논문에서는 탄소나노튜브를 성장시킬 때의 압력에 따른 성장 특성을 알아보았다. 작업 진공도에 따른 탄소나노튜브의 성장 특성은 FESEM image와 TEM image 을 이용하여 관찰하였으면 Raman spectrometer 분석을 통하여 성장된 탄소나노튜브의 구조적 특성을 알아보았다.

• Journal of the Korean institute of surface engineering
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• 제39권4호
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• pp.153-159
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• 2006

Nanodiamond films were deposited on Si substrate by introducing a time dependent on/off modulation of $CH_4\;and\;O_2$ flows in a vertical-type microwave plasma enhanced chemical vapor deposition system. Surface morphology and diamond quality of the film were investigated as a function of the on/off modulation time interval. The diamond nucleation density on the substrate was enhanced under low temperature and low pressure condition. In addition, the diamond nucleation density was enhanced by increasing the on/off modulation time interval. Enhanced diamond quality was noticeable under the condition of a longer on/off modulation time interval. It was suggested that the nanodiamond nuclei formed the cluster formation.