• Analytical Science and Technology
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• v.23 no.6
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• pp.511-517
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• 2010

Dissolution procedure of vanadium pentoxide, which is widely used as a catalyst for production of sulfuric acid or an oxide reaction of the numerous organic compounds, was investigated. Reagent of vanadium pentoxide was completely dissolved in aqua regia-$H_2O_2$-HF solution, but plate type of vanadium pentoxide sample was not clearly dissolved with mixed acids. Thus, in order to establish the dissolution procedure for plate type of vanadium pentoxide, the solubility of vanadium pentoxide was investigated through comparison of acid treatment-fusion and microwave digestion methods. The optimized acid for dissolution of vanadium compound was found to be mixing acids of aqua regia, $H_2O_2$ and HF. Acid-fusion and microwave digestion methods have a similar property in the solubility of vanadium compound, but the latter was more quick and convenient procedure. The content of vanadium pentoxide was found to be $97.9{\pm}0.9%$ using an inductively coupled plasma atomic emission spectrometer after dissolution of a sample with the microwave digestion system.

• Journal of the Korean Applied Science and Technology
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• v.21 no.2
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• pp.174-181
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• 2004

Multi-walled carbon nanotubes (CNTs) were prepared by thermal chemical vapor deposition (CVD) and microwave plasma chemical vapor deposition (MPCVD) using various combination of binary catalysts with four transition metals such as Fe, Co, Cu, and Ni. In the preparation of CNTs from acetylene precursor by thermal CVD, the CNTs with very high yield of 43.6 % was produced over $Fe-Co/Al_2O_3$. The highest yield of CNTs was obtained with the catalyst reduced for 3 hr and the yield was decreased with increasing reduction time to 5 hr, due to the formation of $FeAl_2O_4$ metal-aluminate. On the other hand, the CNTs prepared by acethylene plasma CVD had more straight, smaller diameter, and larger aspect ratio(L/D) than those prepared by thermal CVD, although their yield had lower value of 27.7%. The degree of graphitization of CNTs measured by $I_d/I_g$ value and thermal degradation temperature were 1.04 and $602^{\circ}C$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.240-248
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CH_4/H_2$ gas flow ratio, total, gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. It is introduced how the real-time spectroscopic ellipsometry is used and the data are analyzed with the view of getting the growth condition and the accompanied features for a good quality of diamond films. And it is determined the important parameters during the diamond film growth, which include the final sample will be measured with Raman spectroscopy to confirm the diamond component included in the film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.101-105
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• 2010

Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.

• Composites Research
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• v.34 no.1
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• pp.23-29
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• 2021

Commercialized carbon fiber obtained from polyacrylonitrile(PAN) precursor is subjected to oxidation stabilization at 180 to 300℃ in air atmosphere and carbonization process at 1600℃ or lower in inert gas atmosphere. Both of these processes use a lot of time and high energy, but are essential and important for producing high-performance carbon fibers. Therefore, in recent years, an alternative stabilization technology by being assisted with various other energy sources such as plasma, electron beam and microwave which can shorten the process time and lower energy consumption has been studied. In this study, the PAN precursor was stabilized by using plasma treatment and heat treatment continuously. The morphology, structural changes, thermal and physical properties were analyzed using Field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), Fourier transform infrared(FT-IR), Thermogravimetric analysis(TGA) and Favimat.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Korean Journal of Food Science and Technology
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• v.47 no.4
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• pp.486-491
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• 2015

The potential of applying cold plasma (CP) treatments to improve microbiological safety of powdered products has been investigated using infant milk powder (IMP) and onion powder (OP). Among the different kinds of CP-forming gases, He-$O_2$ (99.8:0.2) gas mixture and He gas were most effective in reducing the number of Cronobacter sakazakii in IMP and Bacillus cereus spores in OP, respectively. C. sakazakii counts in IMP decreased by $0.9{\pm}0.1{\log}\;CFU/g$ after CP treatment, and the extent of C. sakazakii inhibition increased in a time-dependent manner. CP treatment at 900 W for 20 min reduced the number of B. cereus spores by ~0.4 log spores/g. Treatments that integrated CP with microwave (MW-CP treatment) as well as those that integrated CP with heat and microwave (H-MW-CP treatment) resulted in a 90% reduction in the number of spores in OP. Thus, CP treatments demonstrated potential for decontaminating foodborne pathogens from powdered products, in combination with heat for improved effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.92-99
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• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.217-220
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increase the reaction area of graphite electrodes. In this study, we have investigated the growth properties of carbon nanowall (CNW) according to the ingredient of gas. Microwave plasma enhanced chemical vapor deposition (MPECVD) system was used to grow CNW on Si substrate with a variety of the reaction gas. The planar and vertical growth conditions of the grown CNWs according to the ingredient of the gas were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The electrical characteristics of CNWs were analyzed using a 4-point probe.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1021-1023
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• 2003

We studied field-emission characteristics of CNTs under various pre-treatment with $NH_{3}$ plasma on the substrate. The turn-on electric field is the lowest value and field enhancement factor (${\beta}$) is he highest value in CNTs pre-treated by $NH_3$ plasma (80 W and 5 min). The field-emission property of CNTs grown on the Ta substrate is slightly better than on the W substrate.