• Applied Chemistry for Engineering
• /
• v.9 no.1
• /
• pp.94-100
• /
• 1998

Methane, the major constituent of natural gas, had been converted to higher hydrocarbons by a microwave plasma. The yield of C2+ product could be increased from 29.2% to 42.2% with increasing plasma power(40~120 watt) and decreasing flow rate(40~5 mL/min) of methane. With catalyst, the selectivities of ethylene and increased while yield of C2+ remaining constant. Among various catalysts, Fe catalyst showed the highest ethylene selectivity of 30%. A natural gas could produce more C2+ than a pure methane. This is due to high reactivity of ethane and propane in the natural gas.

• Journal of the Korean Society for Precision Engineering
• /
• v.19 no.6
• /
• pp.176-183
• /
• 2002

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper , Stripes of grooves of which width 48$\mu$m, depth 124$\mu$m , pitch 274$\mu$m was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6 nm Ra in grooving Si. Barrier ribs were farmed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waviness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.17 no.6
• /
• pp.580-588
• /
• 1992

Plasma-spraying was conducted to produced the microwave absorbing surface films on the alumi-num-alloy used for the fuselage to protect the aircraft against the RADAR detction. The surface films were produced by plasma-splaying the mecharucally mixed composite powders of the silicon carblde and Ni-Zn ferrite. This M /W absorbers were designed experimentally and fabricated trialty, as a result of which the rolative frequency bandwidth of 7.6 to 8.4% were obtained under the tolerance limits of the re-flection coefficients lower than -6dB(absorption ratio 75%), and the maximum absorption thickness becomes 0.5 to 0.5.imm, which Is much thinner than that of the conventional ones.

• The Bulletin of The Korean Astronomical Society
• /
• v.39 no.1
• /
• pp.74.1-74.1
• /
• 2014

We have investigated a supra-arcade structure associated with an M1.6 flare, which occurred on the south-east limb in the 4th of November 2010. It is ob- served in extreme ultraviolet (EUV) with the Atmospheric Imaging Assembly (AIA) onboard the Solar Dynamics Observatory (SDO), microwaves at 17 and 34 GHz with the Nobeyama Radioheliograph (NoRH), and soft X-rays of 8-20 keV with the Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI). Interestingly, we found exceptional properties of the supra-arcade thermal plasma from the AIA 131 A and the NoRH: 1) plasma upflows along large coronal loops and 2) enhancing microwave emission. RHESSI detected two soft X-ray sources, a broad one in the middle of supra-arcade structure and a bright one just above the flare-arcade. We estimated the number density and thermal energy for these two source regions during the decay phase of the flare. In the supra-arcade source, we found that there were increases of the thermal energy and the density at the early and the last stages, respectively. On the contrary, the density and thermal energy of the source on the top of the flare-arcade decreases throughout. The observed upflows imply that there is continuous energy supply into the supra- arcade structure from below during the decay phase of the flare. It is hard to be explained by the standard flare model in which the energy release site is located high in corona. Thus, we suggest that the potential candidate as the energy source for the hot supra-arcade structure is the flare-arcade which has exhibited a predominant emission throughout.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.06a
• /
• pp.40-41
• /
• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Analytical Science and Technology
• /
• v.16 no.2
• /
• pp.134-142
• /
• 2003

Comparison of a microwave-assisted extraction with sonication extraction was performed for arsenic speciation in fish tissue with chromatographic separation and inductively coupled plasma mass spectrometry detection. The detection limits of arsenicals with ultrasonic nebulizerand cross-flow nebulizer were shown to be similar. The arsenicals investigated were arsenobetaine (AsB), arsenite [As(III)], dimethylarsine acid (DMA), monomethylarsonic acid (MMA), arsenate [As(v)], and phenylarsonic acid (PAA). Quantitative extraction of arsenicals from dogfish muscle, DORM-2, standard reference material of NRCC (National Research Council of Canada) was achieved using 50% (v/v) methanol-water in both extraction methods. Extraction efficiency of arsenobetaine in both methods is greater than 82% with RSDs on replicates of less than 5%. The concentrations of AsB determined in extract of microwave assisted extraction and sonication methods were $14.18{\pm}0.42mg\;kg^{-1}$ and $13.54 {\pm}0.84mg\;kg^{-1}$, respectively. And the concentrations of DMA were $0.45{\pm}0.06mg\;kg^{-1}$ and $0.44{\pm}0.06mg\;kg^{-1}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.587-591
• /
• 1998

AZO transparent conducting thin film were fabricated by DC magnetron sputtering using the Zn: Al (2% aluminu contained ) alloy target with inducing microwave to the plasma, and the effect of microwave was studied. The optical transmittance, the resistivity and dynamic deposition rate at the applied voltage to target of 420 V was 50~70%, $ 5.5{\times}10^{-3}{\Omega}$cm and 6,000 $\AA\textrm{mm}^2$/J, respectively. After annealing AZO coated glass at $400^{\circ}C$ for 30 minutes, the light transmittance was increased to 80% and electrical conductivity was also increased two times, reached to resistivity of $2.0{\times}10^{-3}{\Omega}$cm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.397-397
• /
• 2011

최근 태양전지 연구가 활발히 진행되는 가운데 저가 고효율 태양전지로 제안되는 제3세대 태양전지로 Quantum Dots (QD: 양자점) 태양전지에 대한 연구가 많은 연구자들에 의해 관심이 모아지고 있다. 현재까지 보고된 최고효율은 NSWU의 13%의 효율을 보고하고 있으며, 국내에서도 다양한 분야에서 연구가 진행되고 있다. 본 연구에서는 기존의 PECVD에서 문제시 되고 있는 플라즈마에 의한 박막손상과 고온 증착온도 등의 단점을 보완한 증착 기술로 중성입자빔 (Hyper-thermal neutral beam ; HNB)을 이용한 저온 증착방법에 대한 연구를 진행하였다. 유리기판과 p-type Si 기판 그리고 SiNx 박막 위에 Ar, He, H2, 그리고 SiH4 가스를 소스 가스로 활용하여 ECR-microwave 플라즈마에서 생성된 중서입자빔을 이용한 Si 양자점을 형성하였고, Si 양자점 형성 특성과 크기제어 방법에 대한 연구를 진행하였다. 또한 TEM, FTIR, Raman, Photo Luminescence 등의 분석 방법을 이용하여 결정성 및 성분 등을 분석하여 HNB의 특성 및 효과를 규명하였다.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.3
• /
• pp.75-79
• /
• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1349-1351
• /
• 2001

Polycrystalline diamond films are deposited by using a microwave plama CVC system, where the bias-enhanced nucleation (BEN) method is employed. Effects of the varying microwave power, the surface treatment by hydrogen plasma, and the cyclic hydrogen etching during deposition on the crystallinity as well as on the surface roughness of deposited films are examined by Raman spectroscopy, SEM, and AFM. A novel method for achieving a smoother diamond surface is also suggested through the indirect wafer bonding and back-side polishing.