• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.3
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• pp.105-114
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• 1985

2-port stable bipolar transistor oscillator is realized in S band. Oscillator is fabricated by using a highly frequency stabilized 3 identical dielectric resonators and negative resistance is found by means of 3 ports scattering parameters. In this paper, using dielectric resonators as a feedback element. We obtained maximum output 14dBm. 10dBm from collector and base respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.70-75
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• 2010

We have designed the backward wave oscillator operating at 24 GHz. From the research which sees researches in the goal which will design and will produce K-band BWO where is a backward wave oscillator which departs from cycle prisoner 24 GHz until now is higher. To design Chrencov instibility and branch of family used a slow cyclotron instibility. Calculation used a dispersion relation and in order for as the box over-flow not to happen, a asymtotic expansion. Used a beam mode and a waveguide mode and axial symmetry and expense used in compliance with sattle point interpreted the relationship of axial symmetry.

• Current Optics and Photonics
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• v.6 no.6
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• pp.634-641
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• 2022

A frequency stable and tunable optoelectronic oscillator (OEO) incorporating an optical phase shifter and a phase-shifted fiber Bragg grating (PS-FBG) is designed and analyzed. The frequency tunability of the OEO can be realized by using a tunable microwave photonic bandpass filter consisting of a PS-FBG, a phase modulator. The optical phase compensation loop is used to compensate for the phase variations of the RF signal from the OEO by adjusting an optical phase shifter. Simulation results demonstrate that the output RF signals of the OEO can be tuned in a frequency range of 118 MHz to 24.092 GHz. When the ambient temperature fluctuates within ±3.9 ℃, the frequency drifts of the output RF signals are less than 68 Hz, the side-mode suppression ratios are more than 69.39 dB, and the phase noise is less than -92.49 dBc/Hz at a 10 kHz offset frequency.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.209.1-209.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.280.2-280.2
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• 2008

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.1
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• pp.107-114
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• 2021

In this paper, a planar transistor oscillator for X-band using a newly proposed L-shaped monopole slot resonator is proposed. For planar design, an L-shaped monopole slot with an open-end is used as a resonator for a transistor oscillator. As a result of the simulated design of the resonator in three stages, a high Q value of 1169.84 and a high insertion loss of 49.934 dB were identified. The results of the final design and manufactured oscillator measurements confirmed that the oscillation output is greater than 7 dBm and has good phase noise characteristics of -58 dBc/Hz at 100 kHz offset. The proposed oscillator is planar and has the advantage of being directly applicable to microwave integrated circuit technology. It also has the advantage of being able to reduce its size as it can only be implemented in microstrip form without additional devices such as metal cavities and tuning screws in 3D structures, as in the case of a DRO (dielectric resonance oscillator).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.7
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• pp.1210-1218
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• 2001

In this paper, A X-band voltage-controlled hair-pin resonator oscillator(VCHRO) is able to a local oscillator or a signal source in transmitter/receiver of a microwave communication system for mobile radar, is designed and fabricated In order to apply mobile radar system is used the hair-pin resonator stronger on shock or vibration than the dielectric resonator, and also, in order to improvement the phase noise and output power is used a system of serial feedback format A hair-pin resonator was simulated by momentum method of HP ADS and then a oscillator circuit was designed that operates at 10.525 GHz by nonlinear method in harmonic balance simulation. The HRO generated output power of 6.93 dBm at 10.525 GHz, phase noise of -57.74 dBc at 100 kHz offset from carrier and the 2'nd harmonic was suppressed -23.90 dBc.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.2
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• pp.27-34
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• 1995

In this paper, an X-band TDRO(transistor dielectric resonator oscillator) is designed and experimented with the oscillator constructed. Design of the TDRO is carried out by deriving analycally the coupling parameters between a microstrip line and a dielectric resonator. The coupling parameters take account of the relations among substrate material, ground plane, metallic boundaries surrounding the resonator, distance between a microstrip line and a resonator. Two criteria, external quality factor and coupling coefficient, have been chosen in order to evaluate the performance of the TDRO designed. TDRO studed in this paper may be useful for the application of a microwave system requiring a stable and effective oscillator frequency.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.40-46
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• 1974

This paper deals with the self-excited mixer using tunnel diode oscillator operated as a microwave source and Doppler signal detector. The system impedance, the oscillation condition and the frequency conversion theory including moving target are investigated. The oscillating frequency and the output of tunnel diode oscillator are 2.035 GHz and 0.1 mW. The input signal frequency which is equivalent to Doppler signal is lower than tunnel diode oscillator frequency by 125 MHz. TDe conversion loss has been investigated as a functicn of input signal level. This loss is greater than 67 db for the large pump mode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.99-108
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• 2018

This paper presents a design study of a solid state power oscillator to replace the conventional magnetron. The operational conditions of a single-stage 300 W LDMOS power amplifier were fully characterized. The power module consisted of two amplifiers connected in parallel. A delay-line feedback loop was designed for self-oscillation. A phase shifter was inserted in the delay-line feedback loop for adjusting the round-trip phase. Experiments performed using the power oscillator showed an output power of 800 W and a DC-RF conversion efficiency of 58 % at 2.327 GHz. The measured results were in good agreement with those predicted by numerical simulations.