• Title/Summary/Keyword: Microwave Dielectric Ceramics

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Microwave Dielectric Properties of the 0.7Mg4Ta2O9-0.3SrTiO3 Ceramics with Sintering Temperature (소결온도에 따른 0.7Mg4Ta2O9-0.3SrTiO3 세라믹스의 마이크로파 유전특성)

  • Kim, Jae-Sik;Choi, Eui-Sun;Lee, Moon-Kee;Lee, Young-Hie;Bae, Seon-Gi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.538-542
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    • 2005
  • The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional miked oxide method and the sintering temperature was $1425\~1500^{\circ}C$. The hexagonal phase of $Mg_4Ta_2O_9$ and the cubic phase of $SrTiO_3$ were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596 GHz and $-3.14\;ppm/^{\circ}C$, respectively.

Structural and Microwave Dielectric Properties of the $Sr_5Nb_4O_{15}$ Ceramics with Sintering Temperature (소결온도에 따른 $Sr_5Nb_4O_{15}$ 세라믹스의 구조 및 마이크로파 유전특성)

  • Lee, Sung-Jun;Choi, Eui-Sun;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.268-269
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    • 2007
  • In this study, the structural and microwave dielectric properties of the $Sr_5Nb_4O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Sr_5Nb_4O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1350^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Sr_5Nb_4O_{15}$ ceramics were increased with increasing sintering temperature. In the case of the $Sr_5Nb_4O_{15}$ ceramics sintered at $1500^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 22.35, 16,577GHz, +13.40ppm/$^{\circ}C$, respectively.

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Microwave Dielectric Properties of the LiNb3O8-TiO2 Ceramic System with the Addition of Low Firing Agents (저온 소결제 첨가에 의한 LiNb3O8-TiO2계 세라믹스의 마이크로파 유전 특성)

  • Choi, Myung-Ho;Kim, Nam-Chul
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.517-523
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    • 2008
  • The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.

Microwave Dielectric Properties of $[(Pb_{1-x}Ba_{x})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ Ceramics ($[(Pb_{1-x}Ba_{x})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$의 마이크로파 유전 특성)

  • Lee, Sang-Wook;Nam, Hyo-Duk;Park, Jae-Sung;Seo, Jung-Chul;Kim, Jong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.476-479
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    • 2001
  • The microwave dielectric properties of $[(Pb_{1-x}Ba_{x})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were investigated. When $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were sintered at $1250^{\circ}C$ and $1350^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon_{r}=64\sim80$, $Q{\times}f=11,800\sim18,000$. As a result, $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ having $\varepsilon_{r}=80$, $Q{\times}f=11,800$ (at 4 GHz) was developed.

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Microwave Dielectric Properties of [($Pb_{1-x}Ba_{x}$)$_{1/2}La_{1/2}$]($Mg_{1/2}Nb_{1/2}$)$O_3$ Ceramics ([($Pb_{1-x}Ba_{x}$)$_{1/2}La_{1/2}$($Mg_{1/2}Nb_{1/2}$)$O_3$의 마이크로파 유전 특성)

  • 이상욱;남효덕;박재성;서정철;김종철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.476-479
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    • 2001
  • The microwave dielectric properties of [(Pb$_{1-x}$ Ba$_{x}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were investigated. When [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were sintered at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$$_{r}$=64~80, Qxf=11,800~18,000. As a result, [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ having $\varepsilon$$_{r}$=80, Qxf=11,800 (at 4 GHz) was developed.ed.eveloped.ed.

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Microwave dielectric properties according to the additions of NiO to $(Zr_{0.65}, Sn_{0.35})Ti_{1.04}O_{4.04}$ ceramics ($(Zr_{0.65}, Sn_{0.35})Ti_{1.04}O_{4.04}$세라믹스의 NiO첨가에 따른 고주파 유전 특성)

  • 윤중락;권정열;이헌용;김경용
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.594-600
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    • 1995
  • Dielectric properties at microwave frequencies of ($Zr_{0.65}$, $Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramics with additives, NiO as an agent to improve dielectric properties and $B_{2}$ $O_{3}$ as a firing agent were investigated. When 0.5 - 1.5 wt% of NiO is add, the grain growth is inhibited and the shape of the grain is uniformed, Dielectric constant(Fr) and bulk density are increased with raising amount of NiO at sintering temperature of 1330 - 1360.deg. C, but the temperature coefficient of resonant frquency(.epsilon.$_{r}$) decreased gradually as the NiO content increased. The value of Qx $f_{o}$ was increased as the amount of NiO was increased in the range of 0.5 to 1.0 wt% and the Qx $f_{o}$, was decreased slightly with raising sintering temperature. With NiO of 1.0 wt% and at sintering temperature of 1360.deg. C, this ceramics was found to have excellent microwave properties of .epsilon.$_{r}$=37.8, Qx $f_{o}$ = 48.600 and .tau.$_{f}$ = 7 ppm/.deg. C.C.. C.. C.C.. C.. C.

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Microwave Dielectric Properties of the (l-x)$TiTe_3O_{8}$-x$MgTiO_3$ Ceramics with Sintering Temperature (소결온도에 따른 (l-x)$TiTe_3O_{8}$-x$MgTiO_3$ 세라믹스의 마이크로파 유전 특성)

  • 최의선;김재식;이문기;류기원;이영희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.9
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    • pp.459-463
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    • 2004
  • In this study, the (l-x)$TiTe_3O_{8}$-x$MgTiO_3$ ceramics were investigated to obtain the improved dielectric properties of a high temperature stability and a sintering temperature of less than $900^{\circ}C$ which was necessary for the LTCC. According to the X-ray diffraction patterns of the (l-x)$TiTe_3O_{8}$-x$MgTiO_3$(x=0∼1) ceramics, the columbite structure of $TiTe_3O_{8}$ and ilmenite structure of $MgTiO_3$ were coexisted. Increasing the $MgTiO_3$ mole ratio(x), the density and dielectric constant were decreased and temperature coefficient of resonant frequency was moved to the negative direction and the quality factor was increased. In the case of the 0.6$TiTe_3O_{8}$-0.4$MgTiO_3$ ceramics sintered at $830^{\circ}C$ for 3hr., the microwave dielectric properties were $\varepsilon_{\gamma}$=29.3, Q${\times}$$f_{\gamma}$=39.600GHz and $\tau$$_{f}$=+9.3ppm/$^{\circ}C$.

Structural and Microwave Dielectric Properties of the ${Ba_5}{B_4}{O_15}$ (B=Ta,Nb) Ceramics with Sintering Temperature (소결온도에 따른 ${Ba_5}{B_4}{O_15}$ (B=Ta,Nb) 세라믹스의 구조 및 마이크로파 유전특성)

  • Lee, Sung-Jun;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.20-21
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    • 2006
  • In this study, structural and microwave dielectric properties of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb} cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb) ceramics prepared by conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the ${Ba_5}{Ta_4}{O_{15}}$ ceramics were increased continuously with increasing of sintering temperature. And the bulk density and dielectric constant of the ${Ba_5}{Nb_4}{O_{15}}$ ceramics was increased in $1375^{\circ}C{\sim}1400^{\circ}C$ but decerased in $1425^{\circ}C$. In the case of ${Ba_5}{Ta_4}{O_{15}}$ ceramics sintered at $1475^{\circ}C$ and ${Ba_5}{Nb_4}{O_{15}}$ ceramics sintered at $1400^{\circ}C$, The dielectric constant and quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, $-3.06\;ppm/^{\circ}C$ and, 39.55, 28,052 GHz, $5.7\;ppm/^{\circ}C$ respectively.

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Effect of $CaTiO_3$Additions on the Microwave Dielectric Properties of $Mg_2$$SiO_4$-$ZnAl_2$$O_4$Ceramics with Low Dielectric Constant (저유전율을 갖는 $Mg_2$$SiO_4$-$ZnAl_2$$O_4$계 세라믹스의 $CaTiO_3$첨가에 따른 고주파 유전특성)

  • 박일환;김현학;김경용;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.12
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    • pp.1017-1024
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    • 2000
  • Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

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Microwave dielectric properties of the BSST ceramics with BaO compositional ratio (BSST계 세라믹스의 BaO 조성비에 따른 마이크로파 유전특성)

  • 박인길;정장호;이성갑;이영희
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.1
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    • pp.81-85
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    • 1996
  • Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

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