• 제목/요약/키워드: Microstructure texturing

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Comparison of microstructures in T1-1223/Ag tapes with different chemical compositions and J$_c$'s

  • Jeong, D.Y.;Kim, H.K.;Lee, H.Y.;Cha, M.K.;Ha, H.S.;Oh, S.S.;Tsuruta, T.;Horiuchi, S.
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.280-290
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    • 1999
  • The microstructures of a Tl$_{0.8}Pb_{0.2}Bi_{0.2}Sr_{1.6}Ca_2Cu_3O_{9+{\delta}}$/Ag tape (tape I ) with J$_c$ of 17,600 A/cm$^2$ at 77 K and 0 T and three Tl$_{0.8}Pb_{0.2}Bi_{0.2}Sr_{1.8}Ba_{0.2}Ca_{2.2}Cu_3O_{9+{\delta}}$/Ag tapes with J$_c$'s of 9,300 (tape II), 16,700 (tape III) and 25,200 A/cm$^2$ (tape IV)prepared using the powder-in-tube method and an in-situ reaction method, were investigated using scanning electron microscopy and high-resolution transmission electron microscopy, and compared each other. ln the tape preparation, an intermediate rolling process was incorporated during final heat-treatment for the last tape, but not for the rest of the tapes. The microstructural analysis revealed clear differences in grain-texturing, crystallographic defects and impurity phases, depending on the chemical composition of the tape. Tendency of directional grain-alignment increased in an order of tapes I, II III and IV. In tape IV, T1-1223 grains are textured, at least in local regions. In crystallographic defects, while stacking faults were prevalent in the former composition, dislocations and voids were frequently observed in the latter. Also impurity phases were appeared to be more abundant in the former than in the latter. The relationship between 1,and the microstructure in the tapes was attempted to explain in a term of grain-linking.

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실리콘 기판 표면 형상에 따른 반사특성 및 광 전류 개선 효과 (Effect of Surface Microstructure of Silicon Substrate on the Reflectance and Short-Circuit Current)

  • 연창봉;이유정;임정욱;윤선진
    • 한국재료학회지
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    • 제23권2호
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    • pp.116-122
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    • 2013
  • For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.