Comparison of microstructures in T1-1223/Ag tapes with different chemical compositions and J$_c$'s

  • Jeong, D.Y. (Korea Electrotechnology Research Institute) ;
  • Kim, H.K. (Korea Electrotechnology Research Institute) ;
  • Lee, H.Y. (Korea Electrotechnology Research Institute) ;
  • Cha, M.K. (Korea Electrotechnology Research Institute) ;
  • Ha, H.S. (Korea Electrotechnology Research Institute) ;
  • Oh, S.S. (Korea Electrotechnology Research Institute) ;
  • Tsuruta, T. (National Institute for Research in Inorganic Materials) ;
  • Horiuchi, S. (National Institute for Research in Inorganic Materials)
  • Published : 1999.08.18

Abstract

The microstructures of a Tl$_{0.8}Pb_{0.2}Bi_{0.2}Sr_{1.6}Ca_2Cu_3O_{9+{\delta}}$/Ag tape (tape I ) with J$_c$ of 17,600 A/cm$^2$ at 77 K and 0 T and three Tl$_{0.8}Pb_{0.2}Bi_{0.2}Sr_{1.8}Ba_{0.2}Ca_{2.2}Cu_3O_{9+{\delta}}$/Ag tapes with J$_c$'s of 9,300 (tape II), 16,700 (tape III) and 25,200 A/cm$^2$ (tape IV)prepared using the powder-in-tube method and an in-situ reaction method, were investigated using scanning electron microscopy and high-resolution transmission electron microscopy, and compared each other. ln the tape preparation, an intermediate rolling process was incorporated during final heat-treatment for the last tape, but not for the rest of the tapes. The microstructural analysis revealed clear differences in grain-texturing, crystallographic defects and impurity phases, depending on the chemical composition of the tape. Tendency of directional grain-alignment increased in an order of tapes I, II III and IV. In tape IV, T1-1223 grains are textured, at least in local regions. In crystallographic defects, while stacking faults were prevalent in the former composition, dislocations and voids were frequently observed in the latter. Also impurity phases were appeared to be more abundant in the former than in the latter. The relationship between 1,and the microstructure in the tapes was attempted to explain in a term of grain-linking.

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