• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.11-19
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• 2013

In this paper, we designed and implemented the planar monopole antenna using the coupling effect for the multi-band characteristic. A parasitic element for the multi-band characteristic based on a rectangular patch with single resonance is inserted. Spiral shaped parasitic element is used for minimizing the antenna size and obtaining the multi-resonance characteristic. The frequency characteristics are modified and optimized by varying specific parameters. By inserting an L-shaped resonator at both sides of the feed line which connected through the via hole to the ground plane, unnecessary frequency bands are eliminated. Proposed antenna dimension is $40{\times}60{\times}1mm^3$. It is fabricated on the FR-4 substrate(${\varepsilon}_r$=4.4) using a microstrip line of $50{\Omega}$ for impedance matching. By measurement results, the characteristic of the return loss under -10 dB are 1.714~2.496 GHz, 2.977~4.301 GHz, and 4.721~6.315 GHz, and the radiation patterns have omni-directional shapes.

• Progress in Superconductivity
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• v.4 no.2
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• pp.132-136
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• 2003

Extremely selective high temperature superconducting (HTS) band -pass filters were developed for the base transceiver station applications of Digital Cellular communication Service (DCS). The filters have a bandwidth of 25 MHz at a center frequency of 834 MHz. There are 12 resonators which have spiral-meander microstrip-line structures in order to reduce far-field radiations with a reasonable tunability. As a result, the size of filters is 5 mm $\times$ 17 mm $\times$ 41 mm. Device characteristics exhibited a low insertion loss of -0.4 dB with a -0.2 dB ripple and a return loss better than -10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.697-706
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• 2000

In this paper, new bandpass filters that are composed of microstrip ring resonators with the center frequency of 5.775 GHz and the bandwidth of 100 MHz are presented. For the suppression of the unnecessary harmonics, lowpass filters are inserted into the feedlines and ring resonator itself, respectively These bandpass filters show good microwave characteristics with the harmonic suppression ratio of about 39 dB and 35 dB, respectively. Also, the varactor-tuned microstip ring bandpass filter with harmonic suppression is suggested and the tuning bandwidth of more than 450 MHz is obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1635-1640
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• 2000

In this paper, a 18 GHz oscillator is designed with the push-push method an fabricated by semi-MMIC process, in which the second harmonic is the main output signal with the suppressed fundamental mode. In semi-MMIC process, passive components with microstrip transmission line are implemented using MMIC process on semi-insulating GaAs substrate. Then, chip types of P-HEMT, resistors, and capacitors are connected through Au wire-bonding. Also, the ground plane is inserted around the circuit and connected each other with the back-side of substrate through Au wire-bonding instead of via-hole. The semi-MMIC push-push oscillator shows the output powder of -10.5 dBm, the fundamental frequency suppression of -17.3 dBc/Hz, and the phase noise of -97.9 dBc/Hz at the offset frequency of 100 kHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.8
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• pp.1313-1321
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• 2000

This paper presents a novel HTS microstrip pseudo-lumped element resonator for the compact and simple filter design. A 7-pole bandpass filter with quasi-elliptic response is designed and fabricated using non-adjacent couplings between resonators. A seven-pole quasi-elliptic filter is fabricated using double sided YBCO on a LaAlO$_3$ substrate with thickness of 0.5 mm and dielectric constant of 23.5. The filter has an insertion loss of 0.8 dB at 20K, a bandwidth of 8 MHz at the center frequency of 1774 MHz, and an attenuation of 33 dB for the cut-off-band of 1 MHz.

• ETRI Journal
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• v.43 no.6
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• pp.957-965
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• 2021

A miniaturized wideband band-pass filter with a 3-dB fractional bandwidth of 109.3% (1.53 GHz to 5.22 GHz), high out-of-band attenuation greater than 25 dB, and wide upper stopband up to 14 GHz is proposed. The design consists of a dual-composite right/left handed resonator, embedded open-circuited stub, and a pair of quarter-wavelength short-circuited stubs. These elements are coupled in the near distance to form a miniature filter with a compact occupied area of 0.21 λ_g×0.19 λ_g (≈ 0.013 cm²). The optimized filter has multitransmission poles in the passband, substantially improving the return loss and insertion loss characteristics. The behavior of the passband and stopband is verified against the results of a lumped element model and matrix analysis with a full-wave moment-based analysis and actual measurements. The results of this verification and a comparison with the performance of filters in other references indicate that the proposed filter is very efficient and applicable to compact microwave systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.200-207
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• 2009

This paper presents a compact, low insertion loss, sharp rejection and wide band microstrip band pass filter that is composed rectangular loop resonator and Step-Impedance-Open-Stub(SIOS). The SIOS can be reduce length about 30 % more than general 0.25 $\lambda$ open stub. And the stub can the advantage of tuning impedance magnitude. In order to demonstrate agrement of this paper prove, the optimized wide band pass filters are realized and experimented. A transmission line model used to calculate the frequency response of the new filters shows good agreement with measurements. The filter has 3 dB fractional bandwidth of 51.75 %(3.206 GHz), an insertion loss of better than 0.44 dB from 4.587 GHz to 7.793 GHz, and two rejection of greater than 30 dB within 221 MHz($4.326{\sim}4.587\;GHz$) at low frequency band, 181 MHz($7.739{\sim}7.954\;GHz$) at high frequency band. Maximum rejection characteristics of the filter are -61.8 dB at low frequency and -76.3 dB at high frequency.

• Journal of Advanced Navigation Technology
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• v.21 no.2
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• pp.193-199
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• 2017

In the paper, a dual band-notched monopole antenna is proposed for 2.4 GHz WLAN (2.4 ~ 2.484 GHz) and UWB (3.1 ~ 10.6 GHz) applications. The 3.5 GHz WiMAX band notched characteristic is achived by a pair of L-shaped slots instead of the previous U-shaped slot on the center of the radiating patch, whereas the 7.5 GHz band notched characteristic is achived by C-shaped strip resonator placed near to the microstrip feed line. The measured impedance bandwidth (${\mid}S_{11}{\mid}{\leq}-10dB$) is 8.62 GHz (2.38 ~ 11 GHz) which is sufficient to cover 2.4 GHz WLAN and UWB band, while measured band-notched bandwidths for 3.5 GHz WiMAX and 7.5 GHz bnad are 1.13 GHz (3.15 ~ 4.28 GHz) and 800 MHz (7.2 ~ 8 GHz) respectively. In particular, it has been observed that antenna has a good omnidirectional radiation patterns and higher gain of 2.51 ~ 6.81 dBi over the entire frequency band of interest.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.174-179
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• 2013

This paper presents a capacitor loaded tunable bandpass chip filter using multiple split ring resonators (MSRRs) with two transmission zeros. To obtain high selectivity and minimize the chip size, asymmetric feed lines are adopted to make a pair of transmission zeros located on each side of passband. Compared with conventional filters using cross-coupling or source-load coupling techniques, the proposed filter uses only two resonators to achieve high selectivity through a pair of transmission zeros. In order to optimize selectivity and sensitivity (insertion loss) of the filter, the effect of the position of asymmetric feed line on transmission zeros and insertion loss is analyzed. The SOI-CMOS switched capacitor composed of metal-insulator-metal (MIM) capacitor and stacked-FETs is loaded at outer rings of MSRRs to tune passband frequency and handle high power signal up to +30 dBm. By turning on or off the gate of the transistors, the passband frequency can be shifted from 4GH to 5GHz. The proposed on-chip filter is implemented in 0.18-${\mu}m$ SOI CMOS technology that makes it possible to integrate high-Q passive devices and stacked-FETs. The designed filter shows miniaturized size of only $4mm{\times}2mm$ (i.e., $0.177{\lambda}g{\times}0.088{\lambda}g$), where ${\lambda}g$ denotes the guided wave length of the $50{\Omega}$ microstrip line at center frequency. The measured insertion loss (S21)is about 5.1dB and 6.9dB at 5.4GHz and 4.5GHz, respectively. The designed filter shows out-of-band rejection greater than 20dB at 500MHz offset from center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..