• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.504-506
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• 1995

By means of adding B into Sendust alloy (Fe-Si-Al) with state of amorphous ribbon, mechnical properties of alloy was improved effectively, and magnetic properties didn't decrease obviously. The optimum adding quantity of B is 0.015-0.03 wt%. The adding of B was thought to give rise to reduction of ordering degree of $Fe_{3}(Si,Al)$ phase of Sedust alloy(Fe-Si-Al-B) and result in improvment of embrittlement of this alloy.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.50-50
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• 2020

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.417-423
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• 2010

In this study, an effective method to prepare granular binderless ZSM-5 which is as efficient p-xylene separatory adsorbent was explored. Colloidal silica sol 30 wt% solution as an inorganic binder and microcrystalline cellulose as an organic additive were added to ZSM-5 powder ($SiO_2/Al_2O_3$ = 50). Adsorbent with enough strength (0.721 kgf), high crystallinity (94.6%) and high BET specific surface area ($379.2m^2$/g) was obtained by calcination, binderless treatment, ${NH_4}^+$ ion exchange, and activation after spherical granulation process. A batch type adsorption experiment was proceeded with solutions comprising 3 xylene isomers by 1 : 1 : 1 weight ratio to evaluate adsorption characteristics of prepared absorbent. As a result, the obtained binderless ZSM-5 granule showed a higher selective adsorption performance for para-xylene than that of commercial adsorbent.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.939-944
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• 1998

The formation microstructure and properties of novel ceramic composite materials by active filler con-trolled polymer pyrolysis were investigated. Polymethlsiloxane filled with W is of particular interested be-cause of the formation of ceramic bonded hard materials (WC-$W_{2}C$-$S_{1}OC$) for wear resistant applications. Highly metal-filled polymer suspensions were prepared and their conversion to ceramic composites by an-nealing in $N_{2}C$ atmosphere at 1000-$1600^{\circ}C$ were studied. Dimensional change porosity and phase distribution (filler network) were analyzed and correlated to the resulting material properties. Microcrystalline com-posites with the filler reaction products embedded to the resulting material properties. Microcrystalline com-posites with the filler reaction products embedded in a silicon oxycarbide glass matrix were produced. De-pending on the pyrolysis conditions ceramic composites with a density up to 95 TD% a hardness of 7-8.8GPa Yong's modulus of 220-230 GPa a fracture toughness of 6-6.8$MPam^{1/2}$ and a flexual strength of 380-470 MPa were obtained.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.757-763
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• 2016

$Ho^{3+}/Yb^{3+}/Tm^{3+}$ tri-doped $NaY_{1-x}(WO_4)_2$ phosphors with proper doping concentrations of $Ho^{3+}$, $Yb^{3+}$ and $Tm^{3+}$ ($x=Ho^{3+}+Yb^{3+}+Tm^{3+}$, $Ho^{3+}$=0.04, 0.03, 0.02, 0.01, $Yb^{3+}$=0.35, 0.40, 0.45, 0.50 and $Tm^{3+}$=0.01, 0.02, 0.03, 0.04) were successfully synthesized via the microwave sol-gel route, and their upconversion properties were investigated. Well-crystallized microcrystalline particles showed fine and homogeneous microcrystalline morphology with particle sizes of $1-2{\mu}m$. The optical properties were comparatively examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the doped particles exhibited white emissions based on blue, green and red emission bands, which correspond to the $^1G_4{\rightarrow}^3H_6$ transitions of $Tm^{3+}$ in the blue region, the $^5S_2/^5F_4{\rightarrow}^5I_8$ transitions of $Ho^{3+}$ in the green region, the $^5F_5{\rightarrow}^5I_8$ transitions of $Ho^{3+}$, and the $^1G_4{\rightarrow}^3F_4$ and $^3H_4{\rightarrow}^3H_6$ transitions of $Tm^{3+}$ in the red region. The pump power dependence of the upconversion emission intensity and the Commission Internationale de L'Eclairage chromaticity coordinates of the phosphors were evaluated in detail.

• Microbiology and Biotechnology Letters
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• v.14 no.5
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• pp.407-413
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• 1986

In an agitated bead reaction system, the enzymatic saccharification of uncooked starch was substantially enhanced. The enhancement mechanism was investigated front the view of the structural aspect of starch. The mechanical impact caused by the movement of the attrition-milling media resulted neither the destruction of microcrystalline structure nor the fragmentation of starch granule. instead, the most distinct phenomenon was the swelling of starch granule up to about 2.5 times, and the swelling mechanism was not similar with that caused by cooking. However, in the case of the enzyme addition in the attrition coupled reaction system, the swollen starch was easily fragmented into the large number of small particles by the synergistic action of the enzyme and milling-media. The exposed surface area of the fragmented particles plays the major role in enhancing the saccharification. The saccharification rate was quite different depending on the source of starch, the reason was discussed in terms of the granular structure of uncooked starches.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.181-187
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• 1997

The layered BaTiO3 thin films with a high dielectric constant of polycrystalline BaTiO3 and a good in-sulating property of amorphous BaTiO3 were prepared. And their electrical properties were characterized with stacking methods. The BaTiO3 thin films were prepared by rf-magnetron sputtering technique using a ceramic target on Indium-doped Tin oxide coated glasses. A new stacking method resulted in higher dielec-tric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decrease the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a mul-tilayered amorphous/microcrystalline/polycrystalline structure, which was confirmed indirectly by AES depth profile.

• Journal of Life Science
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• v.28 no.4
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• pp.472-477
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• 2018

Pravastatin sodium is a 3-hydroxy-3-methylglutaryl-coenzyme A (HMG-CoA) reductase inhibitor used in the treatment of hypercholesterolemia by reducing cholesterol biosynthesis. Pharmaceutical excipients of commonly used including water, diluents, stabilizers, disintegrants, lubricants and colorants, and were identified for compatibility. All tests were performed by means of physical mixture of pravastatin and the excipients, which were placed in a press-through-pack (PTP) and incubated under accelerated conditions ($40^{\circ}C$ and 75% relative humidity) for 3 months. The blends of pravastatin with all excipients developed white, off white, and light brown powders, which showed no changes upon visual analysis. Accelerated conditions changed the degradation profile of pravastatin calcium in the HPLC system when mixed with different excipients. Although most excipients can have minor effects on pravastatin stability, the major degradation product from pravastatin was lactone. Low-level interaction (assay and impurity) was induced by all excipients except for microcrystalline cellulose and croscarmellose sodium. These excipients increased lactone impurity in 3 months by as much as 0.22% and 0.18% respectively. The total mixture slightly increased the lactone impurity (by 0.43% in 3 months) of pravastatin. There was no change in the assays of all excipients. These results will be helpful in studying tablet size reductions for convenience of use.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.439-444
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• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.