• The KIPS Transactions:PartC
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• v.9C no.5
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• pp.733-742
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• 2002

It has been known that the host mobility feature has very significant impact on the QoS (Quality of Service), which is usually required to a real-time multimedia application. The existing QoS support mechanisms to provide the real-time services to fixed network environment, like as RSVP, are inadequate to accommodate the mobile hosts which can frequently change their point of attachments to the fixed network. So, MRSVP (Mobile RSVP) protocol has been proposed to reduce the impacts of host mobility on QoS guarantees, in which a mobile host needs to make advance resource reservations at multiple locations it may possibly visit during the lifetime of the connection. This paper proposes a dynamic dual anchor node (DDAN) architecture which integrates the MRSVP and RSVP tunnel, in addition to the Mobile IP Regional Registration protocol. By limiting the resource reserved in local area, it preserves the lower level of resource reservation, but provides approximately the same degree of QoS support as the existing MRSVP.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.2 s.95
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• pp.184-191
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• 2005

The near-field scanning micro scope (NSOM) technique is in the spotlight as the next generation storage device. Many different types of read/write mechanism for NSOM have been introduced in the literature. In order for a near-field probe to be successfully implemented in the system, a suitable slider and suspension are needed to be properly designed. The optical slider is designed considering near-filed optics and probe array. The suspension generally supports slider performance, and tracking servo capacity in HDD. Moreover, the suspension for optical slider also should meet the optical characteristics, and is also required to satisfy shock performances for the mobility for the actuator. In this study, the optical slider and the suspension for near-field probe array are designed and analyzed.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.393-398
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• 2004

The near-field scanning micro scope (NSOM) technique is in the spotlight as the next generation storage device. Many different types of read/write mechanism for NSOM have been introduced in the literature. In order for a near-field probe to be successfully implemented in the system, a suitable slider and suspension are needed to be properly designed. The optical slider is designed considering near-filed optics and probe array. The suspension generally supports slider performance, and tracking servo capacity in HDD. Moreover, the suspension for optical slider also should meet the optical characteristics, and is also required to satisfy shock performances for the mobility for the actuator. In this study, the optical slider and the suspension fer near-field probe array are designed and analyzed.

• Applied Microscopy
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• v.50
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• pp.7.1-7.10
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• 2020

Tantalum nitride (TaN_x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaN_x films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaN_x phase evolves from body-centered-cubic (b.c.c.) TaN_0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaN_x film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaN_x film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.4
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• pp.49-58
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• 2007

Hierarchical Mobile IPv6 (HMIPv6) has been proposed by Internet Engineering Task Force (IETF) to compensate for such problems as handover latency and signaling overhead in employing Mobile IPv6 (MIPv6). HMIPv6 supports micro-mobility within a domain and introduces a new entity, namely mobility anchor point (MAP) as a local home agent. However, HMIPv6 causes load concentration at a particular MAP and longer handover latency when inter-domain handover occurs. In order to solve such problems, this paper establishes a virtual domain (VD) of a higher layer MAP and proposes a MAP changing algorithm in which the routing path changes between mobile node (MN) and correspondent node(CN) according to the mobile position and the direction of the MN before inter-domain handover occurs. The proposed algorithm not only enables complete handover binding-update of the on-link care of address (LCoA) only when inter-domain handover occurs, but concentrated load of a particular MAP is distributed as well. This is because the MNs registered with higher layer MAP and lower layer MAP coexist in the VD. We simulate the performance of the proposed algorithm and compare with HMIPv6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Proceedings of the Korea Information Processing Society Conference
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• 2006.05a
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• pp.971-974
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• 2006

핸드오프가 자주 발생할 경우 모바일IP에서 제어 메시지가 많이 발생하게 된다. 이러한 문제를 해경하기 위해서 마이크로 모빌리티 프로토콜이 제안되었다. 이 논문에서 마이크로 모빌리티 환경에서 안전한 멀티캐스팅 서비스를 제공하기 위한 방법에 대해 소개한다. 먼저 마이크로 모빌리티 환경에서의 멀티캐스팅 서비스 프로토콜을 소개하고 이 프로토콜을 기반으로 보안 서비스를 추하한다. 제안된 멀티캐스트 라우팅 프로토콜은 공유 멀티캐스트 트리를 만들고 다른 유니캐스트 마이크로 모빌리티 프로토콜을 고려하지 않는다. 추가된 보안 서비스는 인증, 권한, 기밀성, 그리고 완전무결성이 대칭이나 비대칭 암호와 알고리즘을 기반으로 하여 포함되어 있다. 또한 보안 프로토콜은 그룹의 멤버가 자주 바뀌고 핸드오프가 일어나는 현상을 다루기 위하여 페이징 지역을 기준으로 계층적 키 구조를 사용한다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.117-124
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• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.