• 정보처리학회논문지C
• /
• 제9C권5호
• /
• pp.733-742
• /
• 2002

이동 컴퓨팅 환경에서 사용자의 이동 특성은 실시간 멀티미디어 서비스를 제공하기 위해서 요구되는 QoS에 심각한 영향을 미친다. 기존의 유선환경에서 실시간 서비스를 제공하기 위해서 제안된 RSVP 프로토콜을 이동 사용자의 네트워크 접속점이 수시로 변화하는 이동 컴퓨팅 환경에 적용하기에는 부적합하다. 사용자의 이동이 QoS에 미치는 영향을 최소화하기 위해서 사용자가 이동할 것으로 예상되는 영역에 대한 자원을 미리 예약하는 프로토콜이 MRSVP(Mobile RSVP)이다. 본 논문은 기존의 MRSVP를 확장하여 RSVP Tunnel 및 Mobile IP의 지역 등록(Regional Registration) 프로토콜이 결합된 동적 이중 앵커노드(DDAN : Dynamic Dual Anchor Node) 구조를 제안한다. 이는 기존의 MRSVP 프로토콜에서 미리 예약되는 자원을 지역적으로 제한함으로써 자원예약을 최소화시키는 반면에, 기존의 MRSVP와 유사한 수준의 QoS 보장을 목적으로 한다.

• 한국소음진동공학회논문집
• /
• 제15권2호
• /
• pp.184-191
• /
• 2005

The near-field scanning micro scope (NSOM) technique is in the spotlight as the next generation storage device. Many different types of read/write mechanism for NSOM have been introduced in the literature. In order for a near-field probe to be successfully implemented in the system, a suitable slider and suspension are needed to be properly designed. The optical slider is designed considering near-filed optics and probe array. The suspension generally supports slider performance, and tracking servo capacity in HDD. Moreover, the suspension for optical slider also should meet the optical characteristics, and is also required to satisfy shock performances for the mobility for the actuator. In this study, the optical slider and the suspension for near-field probe array are designed and analyzed.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2004년도 추계학술대회논문집
• /
• pp.393-398
• /
• 2004

The near-field scanning micro scope (NSOM) technique is in the spotlight as the next generation storage device. Many different types of read/write mechanism for NSOM have been introduced in the literature. In order for a near-field probe to be successfully implemented in the system, a suitable slider and suspension are needed to be properly designed. The optical slider is designed considering near-filed optics and probe array. The suspension generally supports slider performance, and tracking servo capacity in HDD. Moreover, the suspension for optical slider also should meet the optical characteristics, and is also required to satisfy shock performances for the mobility for the actuator. In this study, the optical slider and the suspension fer near-field probe array are designed and analyzed.

• Applied Microscopy
• /
• 제50권
• /
• pp.7.1-7.10
• /
• 2020

Tantalum nitride (TaN_x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaN_x films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaN_x phase evolves from body-centered-cubic (b.c.c.) TaN_0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaN_x film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaN_x film.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.254-255
• /
• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 대한전자공학회논문지TC
• /
• 제44권4호
• /
• pp.49-58
• /
• 2007

IETF(Internet Engineering Task Force)에서는 기존의 Mobile IPv6에서 핸드오버 시 빈번한 바인딩 업데이트로 인해 발생하는 핸드오버 지연과 시그날링 오버헤드등 단점을 보완하기 위하여 HMIPv6(Hierarchical Mobile IPv6)를 제안하였다. HMIPv6는 지역 Home Agent역할을 하는 MAP(Mobility Anchor Point)라는 새로운 개체를 도입하여 MAP 도메인 내에서의 마이크로 이동성을 지원하기 위한 방법이다. 그러나 HMIPv6는 특정 MAP로의 부하집중과 MAP도메인 간의 핸드오버 시에 큰 지연시간은 극복해야 할 문제점으로 지적되고 있다. 본 논문에서는 이러한 문제점을 해결하기 위하여, 멀티레벨 계층 구조에서 상위계층 MAP와 하위계층 MAP가 담당하는 노드들이 공존하는 가상도메인을 설정하여 노드의 이동방향에 따라 2계층 핸드오버 이전에 글로벌 바인딩 업데이트를 실시하여 MAP를 전환하는 방법을 제안한다. 제안방안은 MAP 도메인 간 핸드오버 시 LCoA의 바인딩 업데이트만으로 핸드오버를 완료할 수 있을 뿐만 아니라 가상 도메인에는 상위계층 MAP와 하위계층 MAP가 담당하는 MN들이 공존하기 때문에 특정 MAP로의 부하집중 문제를 해결할 수 있다. 제안방안의 성능을 검증하기 위하여 시뮬레이션을 실행하고 HMIPv6와 비교 분석한다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.28-28
• /
• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 마이크로전자및패키징학회지
• /
• 제30권2호
• /
• pp.43-51
• /
• 2023

본 논문에서는 전기차 전력변환 시스템의 근간이 되는 전력반도체 소자의 발전 방향과 차세대 전력반도체 소자인 wide bandgap (WBG)의 특징에 관해 소개하고자 한다. 현재까지의 주류인 Si insulated gate bipolar transistor (IGBT)의 특징에 관해 소개하고, 제조사 별 Si IGBT 개발 방향에 대해 다루었다. 또한 대표적인 WBG 전력반도체 소자인 SiC metal-oxide-semiconductor field-effect transistor (MOSFET)이 가지는 특징을 고찰하여 종래의 Si IGBT 소자 대비 SiC MOSFET이 가지는 효용 및 필요성에 대해 서술하였다. 또한 현 시점에서의 GaN 전력반도체 소자가 가지는 한계 및 그로 인해 전기자동차용 전력변환모듈 용으로 사용하기에 이슈인 점을 서술하였다.

• 한국정보처리학회:학술대회논문집
• /
• 한국정보처리학회 2006년도 춘계학술발표대회
• /
• pp.971-974
• /
• 2006

핸드오프가 자주 발생할 경우 모바일IP에서 제어 메시지가 많이 발생하게 된다. 이러한 문제를 해경하기 위해서 마이크로 모빌리티 프로토콜이 제안되었다. 이 논문에서 마이크로 모빌리티 환경에서 안전한 멀티캐스팅 서비스를 제공하기 위한 방법에 대해 소개한다. 먼저 마이크로 모빌리티 환경에서의 멀티캐스팅 서비스 프로토콜을 소개하고 이 프로토콜을 기반으로 보안 서비스를 추하한다. 제안된 멀티캐스트 라우팅 프로토콜은 공유 멀티캐스트 트리를 만들고 다른 유니캐스트 마이크로 모빌리티 프로토콜을 고려하지 않는다. 추가된 보안 서비스는 인증, 권한, 기밀성, 그리고 완전무결성이 대칭이나 비대칭 암호와 알고리즘을 기반으로 하여 포함되어 있다. 또한 보안 프로토콜은 그룹의 멤버가 자주 바뀌고 핸드오프가 일어나는 현상을 다루기 위하여 페이징 지역을 기준으로 계층적 키 구조를 사용한다.

• 전자공학회논문지A
• /
• 제33A권5호
• /
• pp.117-124
• /
• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.