• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.1
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• pp.24-30
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• 2004

Analysis model for the two-phase catalytic reactor is presented. With the progress in development of micro thermofluidic devices, needs fur understanding of the phenomena in two phase reaction in cm scale has been arisen. To investigate thermal and reactive performance of down scaled two phase reactor simple analysis model that is a kind of lumped flow model is proposed. Analysis model presented is based on the experiment on mm scale model reactor. Target experiment is catalytic decomposition of 70wt％ hydrogen peroxide with existence of perovskite L $a_{0.8}$S $r_{0.2}$Co $O_3$ catalyst. It is composed of balance equations of mass and energy. Each phase is considered to be a species fur the simplicity. Axial diffusion and transversal distribution of properties are neglected. Two phase catalytic reaction is modeled as successive gasification of liquid lump around catalyst and reaction in gas phase. Heat transfer is modeled by model function ofNu number. Modeled Nu is expressed as Nu=N $u_{0}$ (1＋ $a_1$( $a_2$ $T^{-}$ $a_3$)exp( $a_4$ $T^{-1}$)exp( $a_{5}$ z). Transfer coefficients are determined by the comparison of experimental results. With the model, heat transfer characteristics are investigated. Also by the mass transfer coefficient, characteristics in mass transfer is investigated. With the result basic understanding on design and analysis of mm scale two-phase reactive device is obtained. Also it can be further applied to micro scale reactive device fabricated by micromachining.ing..

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.380-381
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• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.390-396
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• 2010

An 80MHz surface acoustic wave (SAW)-based gyroscope utilizing a progressive wave was developed on a piezoelectric substrate. The developed sensor consists of two SAW oscillators in which one is used for sensing element and has metallic dots in the cavity between input and output IDTs. The other is used for a reference element. Coupling of mode (COM) modeling was conducted to determine the optimal device parameters prior to fabrication. According to the simulation results, the device was fabricated and then measured on a rate table. When the device was subjected to an angular rotation, oscillation frequency differences between the two oscillators were observed because of the Coriolis force acting on the metallic dots. Depending on the angular rate, the difference of the oscillation frequency was modulated. The obtained sensitivity was approximately 52.35 Hz/deg.s within the angular rate range of 0~1000 deg/s. The performances of devices with three IDT structures for two kinds of piezoelectric substrates were characterized. Good thermal stability was also observed during the evaluation process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.6227-6235
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• 2015

The HUD has recently been downsized due to the development of micro display and LED technology as a see through information display device, gradually expands the application areas. In this paper, using a DLP micro display device designed a compact head-up display(HUD) optical system for biocular observation of the image exhibition area 5 inches. It was analyzed for each design element of the optical system in order to design a compacted HUD. DLP, projection optical system and concave image combiner were discussed the design approach and the characteristics. Through a connection structure analysis of each optical system, detailed design specifications were set up and designed the optical system in detail. Put a folded configuration in the form of a white diffuse reflector between the projection lens and concave image combiner was designed to be independent, respectively. Distance of the projected image is adjustable up to approximately 2m ~ infinity and observation distance is 1m. Resolution could be recognized by 1 ~ 2pixels in HD($1,280{\times}720pixels$) class, various characters and symbols could be read. In addition, color navigation map, daytime video camera and thermal imaging cameras can be displayed.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.1-13
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• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.55-61
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• 2010

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2017.04a
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• pp.157-157
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• 2017

To minimize the damage by wild birds and acquire the benefits such as protection against weeds and maintenance of water content in soil, the mulching black color vinyl after seeding should be carried out. Non-contact and non-destructive methods that can continuously determine the locations are necessary. In this study, a crop position detection method was studied that uses infrared thermal image sensor to determine the cotyledon position under vinyl mulch. The moving system for acquiring image arrays has been developed for continuously detecting crop locations under plastic mulching on the field. A sliding mechanical device was developed to move the sensor, which were arranged in the form of a linear array, perpendicular to the array using a micro-controller integrated with a stepping motor. The experiments were conducted while moving 4.00 cm/s speed of the IR sensor by the rotational speed of the stepping motor based on a digital pulse width modulation signal from the micro-controller. The acquired images were calibrated with the spatial image correlation. The collected data were processed using moving averaging on interpolation to determine the frame where the variance was the smallest in resolution units of 1.02 cm. Non-linear integral interpolation was one of method for analyzing the frequency using the normalization image and then arbitrarily increasing the limited data value of $16{\times}4pixels$ in one frame. It was a method to relatively reduce the size of overlapping pixels by arbitrarily increasing the limited data value. The splitted frames into 0.1 units instead of 1 pixel can propose more than 10 times more accurate and original method than the existing correction method. The non-integral calibration method was conducted by applying the subdivision method to the pixels to find the optimal correction resolution based on the first reversed frequency. In order to find a correct resolution, the expected location of the first crop was indicated on near pixel 4 in the inversion frequency. For the most optimized resolution, the pixel was divided by 0.4 pixel instead of one pixel to find out where the lowest frequency exists.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.11 s.176
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• pp.165-172
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• 2005

In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.