• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.139-142
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• 2002

Contactless electroreflectance measurements at room temperature were used to determine the bandgap energies of Zn$_{1-x}$ Mg$_{x}$O thin films grown by metal-organic vapor phase epitaxy. It is found that the bandgap energy increases monotonically with the Mg composition x, up to the highest composition measured (x=0.45). The obtained correlation between the bandgap energy and the Mg composition can be used in the analysis of the electronic structure of ZnO/Zn$_{1-x}$ Mg$_{x}$O heterostructures at room temperature.ature.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.3
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• pp.126-133
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• 2015

The aim of this study is to investigate the effect of solution treatment on the corrosion behavior of Mg-8%Al-(0-1)%Zn casting alloys in 1M NaCl aqueous solution. After the solution treatment, all alloys showed single ${\alpha}$-(Mg) phase microstructure by dissolution of ${\beta}(Mg_{17}Al_{12})$ phase into the ${\alpha}$-(Mg) matrix. The $H_2$ evolution volume decreased with an increase in Zn content, which indicates that the addition of Zn plays a beneficial role in decreasing corrosion rate of the Mg-Al-Zn alloy in solution-treated state. The microstructural evaluations on the corrosion products and corroded surfaces after the immersion test in 1 M NaCl solution revealed that the incorporation of more $Al_2O_3$ and ZnO into the corrosion product, by which the penetration of $Cl^-$ ions is impeded, are thought to be responsible for the better corrosion resistance in relation with the Zn addition.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2523-2528
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• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.12-13
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• 2005

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.605-609
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• 2004

The microstructure, electrical and dielectric characteristics of ZnO varistors were investigated at various metal oxide (NiO, MgO, and Cr$_2$O$_3$) additives. The average grain size was increased with addition of NiO while that was decreased with addition of Cr$_2$O$_3$-Thereby, the varistor voltage was higher in Cr$_2$O$_3$-added composition. Among varistors, the varistor added with Cr$_2$O$_3$ exhibited the highest nonlinearity, with 40.5 in the nonlinear exponent and 2.7 ${\mu}$A in the leakage current and its dielectric dissipation factor was relatively low value of 0.0589.

• Journal of Powder Materials
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• v.14 no.6
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• pp.372-379
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• 2007

The microstructure, mechanical and electrochemical properties of plasma electrolytic coatings (PEO) coatings on Mg-4.3 wt%Zn-1.0 wt%Y and Mg-1.0 wt%Zn-2.0 wt%Y alloys prepared by gas atomization, followed by compaction at 320 for 10 min under the pressure of 700 MPa and sintering at 380 and 420 respectively for 24 h, were investigated, which was compared with the cast Mg-1.0 wt%Zn alloy. All coatings consisting of MgO and $Mg_2SiO_4$ oxides showed porous and coarse surface features with some volcano top-like pores distributed disorderly and cracks between pores. In particular, the surface of coatings on Mg-1.0 wt%Zn-2.0 wt%Y alloy showed smaller area of pores and cracks compared to the Mg-4.3 wt%Zn-1.0 wt%Y and Mg-1.0 wt%Zn alloys. The cross section micro-hardness of coatings on the gas atomized Mg-Zn-Y alloys was higher than that on the cast Mg-1.0 wt%Zn alloy. Additionally, the coated Mg-1.0 wt%Zn-2.0 wt%Y alloy exhibited the best corrosion resistance in 3.5%NaCl solution. It could be concluded that the addition of Y has a beneficial effect on the formation of protective and hard coatings on Mg alloys by plasma electrolytic oxidation treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.361-366
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• 2002

Spinel $LiMn_{2-y}M_yO_4$ and $LiMn_{2-y}M_yO_4$ (M=Mg, Zn) powders were synthesized by solid-state method at $800^{\circ}C$ for 37h. Crystal structure and electrochemical properties were analyzed by X-ray diffraction, charge-discharge test, cyclic voltammetry and ac impedance to $LiMn_{2-y}M_yO_4$. All cathode material showed spinel structure in X-ray diffraction. Ununiform distortion which calculated by (111) face and (222) face was almost constant in spite of the change of the kind and the substituting ratio of the metal cation in $LiMn_{2-y}M_yO_4$ (M=Mg, Zn). $LiMn_{1.9}Mg_{0.05}Zn_{0.05}O_4/Li$ cell substituted $Mg^{+2}$ and $Zn^{+2}$ showed excellent discharge capacities than other cells, which it presented about 120mAh/g at the 1st cycle and about 73mAh/g at the 250th cycle, respectively. AC impedance of $LiMn_{2-y}M_yO_4/Li$ cells showed the similar resistance of about 65~110$\Omega$ before cycling.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.350-350
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.98-98
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• 1992

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.