• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.1
• /
• pp.70-78
• /
• 2000

In applying high-${\underline{T_c}}$ superconducting material to microwave devices, Uncertainty of electromagnetics of high-${\underline{T_c}}$ superconductor(HTS) and the temperature dependence of the substrate fits with HTS thin film cause difficulty in realization of such antenna for industrial applications. It must be noted to characteristic the HTS antenna in contrast with normal conducting counterpart for this real application. In this paper, a comparative study between HTS microstrip antennas and gold antennas was reported in terms of the return loss, the characteristic impedance, efficiency, and other various characteristics. HTS thin films were $YBa_2Cu_3O_{7-x}$ (YBCO) on MgO substrates. Superconducting microstrip antennas used in this work were to directly inset a microstrip transmission line into the 50 ${\Omega}$ region of the radiating patch. Measurement results of HTS antennas and gold antennas showed that usable antennas can be made using this architecture.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.2
• /
• pp.44-49
• /
• 2011

The films formed on AZ31B magnesium alloy were prepared from alkaline solution composed of potassium permanganate and sodium hydroxide. The immersion tests were carried out at the different concentration of sodium hydroxide and pre-treatment method in 5 minute. The morphology and the phase composition of the film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The corrosion behavior of the film in 5.0% NaCl solution was evaluated using potentiodyanmic polarization. Open circuit potential in developing film was examined with time. The thin and transparent film was mainly composed of MgO and $Mg(OH)_2$. The film with the best corrosion resistance was obtained at $70^{\circ}C$ bath temperature, 1.6 M concentration of sodium hydroxide and chemical pre-treatment.

• Journal of Advanced Marine Engineering and Technology
• /
• v.29 no.1
• /
• pp.98-106
• /
• 2005

The chemical conversion film formed on magnesium alloy was investigated by using the colloidal silica with some parameters such as solution pH. temperature, solution conditions, and treatment time. Moreover. the solutions consisted of colloidal silica titanium sulfate, and cobalt ions were used for the colloidal silica film to having a good corrosion resistance and adhesion properties. It was thought that the film at 298K was made with combination of Si-O. The quantity of film formed at high temperature such as 333K and 353K is smaller than dissolved quantity during chemical conversion treatment. Adding $CoSO_4$ to the colloidal silica solution enhanced the adhesion force between the silica film and magnesium substrate, The optimum conditions for the chemical conversion treatment solution were PH 2.90 s treatment, and 298K.

• Korean Journal of Materials Research
• /
• v.6 no.8
• /
• pp.825-832
• /
• 1996

적외선 센서의 재료로 활용되고 있는 PLT박막 (두께:8000$\AA$-9000$\AA$)을 Pt/Ti/SiO2/Si와 Pt/M\ulcorner의 하부 구조상에 50$0^{\circ}C$, 55$0^{\circ}C$ 및 $600^{\circ}C$에서 스퍼터링 증착하여 결정성 및 전기적 특성을 조사하였다. $600^{\circ}C$로 in-situ 성장된 PLT박막은 Si기판을 이용한 경우 randomly oriented perovskite 결정구조를 나타내었으며, Pt/MgO 구조위에서는 c-축(00ι)방향으로 배향 성장되었다. $600^{\circ}C$에서 in-situ 성장된 PLT박막의 비유전상수($\varepsilon$r)와 유전정접(tan $\delta$)을 10kHz-100kHz의 주파수에서 측정한 결과 Pt/Ti/SiO2/Si 구조상에 증착된 박막은$\varepsilon$r=90과 tan $\delta$=0.02의 값을 Pt/MgO 구조상에 증착된 박막은 $\varepsilon$e=35와 tan$\delta$=0.01의 값을 나타내었다. 잔류분극량(2Pr)과 초전계수(${\gamma}$)는 상온부근에서 Si 기판을 이용한 경우 각각 0.6$\mu$C/$\textrm{cm}^2$.。C과 0.5x10-8C/$\textrm{cm}^2$.。C정도로 매우 작게 나타났으나 PLT/Pt/MgO 구조에서는 2Pr=5$\mu$C/$\textrm{cm}^2$, r=4x10-8C/$\textrm{cm}^2$.。C로 비교적 양호한 초전박막의 전기적 특성을 나타내었다.

• Applied Microscopy
• /
• v.34 no.2
• /
• pp.95-102
• /
• 2004

The TEM samples prepared by ion milling have the advantage that thin area can be obtained from almost any materials. However, it has the disadvantage that the amount of thin area can often be quite limited. For the cross-sectioned samples and grossly heterogeneous materials, the thickness of less than $0.1{\mu}m$ can be achieved by mechanical grinding and polishing (tripod polisher) and then the TEM samples may be ion-milled for final thinning or cleaning. These approaches were described in this paper. Examples of TEM observations were taken from cross-section samples of thin films on silicon and sapphire, from diffusion layers between $Mo_5Si_3\;and\;Mo_2B$, and from rapidly solidified 304 stainless steel powders embedded in electroplated copper.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.508-508
• /
• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.124-128
• /
• 1999

We report microwave properties of high-T$_c$ superconducting (HTS) microstrip antennas without impedance matching circuits, where the impedance mismatching is obvious under the critical temperature (T$_c$). The superconducting thin films used in this report were YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on MgO substrates produced by pulse laser deposition (PLD) technique. At around T$_c$, 86 K the reflection coefficient rapidly drops, and the standing wave ratio (SWR) becomes almost unity, and the characteristic impedance based on the Smith chart is nearly 50 ${\Omega}$. The reflection coefficient and the SWR of the HTS microstrip antenna were - 62.52 dB and 1.0015, respectively, at the resonant frequency of 11.812 CHz at 86 K.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.02a
• /
• pp.25-26
• /
• 1997

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.05a
• /
• pp.523-526
• /
• 2002

This paper presents the simulation of Au / $Ba_{x}$S $r_{1-x}$ Ti $O_3$(BSTO) / Magnesium oxide (MgO) multi-layered and electrically tunable band-pass filters (BPFs) by using high frequency structure simulator (HFSS). This model is a two-pole microstrip edge coupled filter. The filter was designed fur a center frequency about 5.8 GHz. The tunabillity of the filter is achieved using the nonlinear dc electric-field dependence on the relative dielectric constant of BSTO frroelectric thin film. This work seems very promising for future wireless communication systems....

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.41-44
• /
• 1998

Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.