• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.143-143
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• 2009

In this paper, MgO thin films were deposited on Si(100) single crystal substrates by RF magnetron sputtering. The effects of RF power, chamber atmosphere, and substrate temperature on the characteristics of MgO thin films were already studied. Thus, we focused on the working pressure. The structural properties of the films changed dramatically with deposition conditions. Structural analyses carried out by X-ray diffraction (XRD). MgO films were obtained at the deposition conditions as follows:

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.51-55
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• 2006

MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.

• Journal of Surface Science and Engineering
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• v.37 no.3
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• pp.169-174
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• 2004

MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.379-382
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• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.26-29
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• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.1-4
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• 1991

The applicability of $LiNbO_{3}$ as a substrate for fabrication of Ti-indiffused waveguide electro-optic devices is limited. Ti diffuses comparatively in congruently melting $LiNbO_{3}$; the Curie temperature of this material is too low to permit diffusion temperatures much above $1100^{\circ}C$ without the necessity of re-poling the crystal. Both of hese difficulties could be eliminated by incorporating certain dopants in $LiNbO_{3}$. Crystals of $LiNbO_{3}$ doped with Ti and Mg were grown and evaluated. The electroptic coefficients and birefringence of $LiNbO_{3}$ doped crystals were measured at ${\lambda}=.6328$ and $1.32\;$\mu{m}$. Curie temperatures were measured. The Curie temperature of both undoped and Ti-doped $LiNbO_{3}$ was $1130^{\circ}C$; that for Mg-doped $LiNbO_{3}$ was $30^{\circ}$ higher. From these data, a composition for the crystals was estimated. Thermogravimetric data confirmed this estimate and showed that the composition of Mg : $LiNbO_{3}$ was $49.3{\pm}0.2mole%\;Li_{2}O$ ; the composition of the undoped and Ti : $LiNbO_{3}$ samples was $48.6{\pm}0.2mole%$. Diffusion of Ti into both Mg-doped and Ti-doped $LiNbO_{3}$ crystals was studied as a function of $Li/NbO_{3}$ ratio and temperature.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.870-876
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• 1994

In order to investigate the growth behavior of $Y_{2}Ba_{1}Cu_{1}O_{5}$(211) particles in $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$(123), 123 samples were quenched in air after heat treatment on polycrystal and single crystal MgO substrates at $1100^{\circ}C$ for various periods. 211 grains grew with the increase in holding time. The growth of 211 grains was faster on the polycrystal MgO substrate than on the single crystal MgO substrate. In the samples with the compositions of 211+xCuO($0.2\le X \le 0.8$), the growth rate of 211 grains increased with the increase in CuO content. In the sample with x=0.6 the largest 211 grains were observed. 211 grains in the $Y_{2}Ba_{1}Cu_{1.8}Sn_{0.1}O_{5+\delta}$ samples were distributed very finely and homogeneously. The retarding effect of $SnO_2$ addition on the growth of 211 grain appeared more pronounced in a CuO melt than in a $BaCuO_{2}$+ CuO melt.

• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Journal of Magnetics
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• v.13 no.4
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• pp.163-166
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• 2008

Multiferroic $CoCr_2O_4$ film was deposited on MgO and $MgAl_2O_4$ substrates by the rf-sputtering process. The films were prepared at an RF-magnetron sputtering power of 50 W and a pressure of 10 mtorr (20 sccm in Ar), and at substrate temperatures of $550^{\circ}C$. The crystal structure was determined to be a spinel (Fd-3m) structure by means of X-ray diffraction (XRD) with Cu $K{\yen}{\acute{a}}$ radiation. The thickness and morphology of the films were measured by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The magnetic properties were measured using a Superconducting Quantum Interference Device (SQIUD) magnetometer. While the ferrimagnetic transitions were observed at about 93 K, which was determined as the Neel temperature, the magnetic properties all show different behaviors. The differences between the magnetic properties can be explained by the stress effects between $CoCr_2O_4$ and the substrates of MgO and $MgAl_2O_4$.