• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.312-312
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• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.187-190
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• 1997

The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.19-19
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.214-214
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.77-81
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• 2006

We report the performance of a four-element, 11.67 GHz, high-Tc superconducting (HTS) microstrip antenna array with corporate feed network and circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from $YBa_2Cu_3O_{7-x}$ (YBCO) superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at room temperature and at cryogenic temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.776-781
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• 2004

We report the performance of a four-element, 11.67 GHz, $high-{T}_c$ superconducting (HTS) microstrip antenna array with corporate feed network. The HTS antenna array used in this work had a circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from ${YBa}_2{Cu}_3{O}_7-x(YBCO)$ superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at cryogenic temperature and room temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.87-92
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• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.282-287
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• 2003

″H″ type resonator has the advantage for the miniaturization of high-T7 superconducting (HTS) microstrip antenna in comparison with the conventional microstrip antenna such as rectangular type or circular type. In this paper we designed miniaturized HTS antennas using this "H"-type resonator and reported the characteristics of our antennas including return loss, bandwidth, radiation patterns, efficiency and so on. To fabricate the "H" type antenna, HTS YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between 50 $\Omega$ feed line and HTS radiating patch. The ″H" type superconducting antenna showed the performance of 1.38 in SWR, 26 % in efficiency, and 13.8 dB in the return loss superior to the normal conducting counterpart.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.598-605
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• 1995

Thin films of $YB_{2}Cu_{3}O_{7-d}$ were prepared on various substrated of MgO(100), $SrTiO_{3}$, and $LaAlO_{3}$ by using off-axis magentron sputtering methods and annealing in-situ. The prarameters of film fabrication processes had been optimized through a "follow the lcoal maxima" strategy to yield good quality films in therms of the critical temperature $T_{c}$ and the critical current density $J_{c}$. Optimizedproecsses employing a plane magndtron and an cylindrical magnetron yielded $T_{c}$>90K along with $J_{c}$$10^{6}$A/$\textrm{cm}^2$ at 77K and > 2${\times}$$10^{7}$A/$\textrm{cm}^2$ at 5K. The sampels, however, showed degradationinthe properties, after chemical etching for fabrication of microbridges with the line width of 2-10 mocrons. In particular, the value of $T_{c}$ for the microbridges of 2microns was as small as 80%. The degradation was strongly dependent on the line width through a formula : $T_{c}$(e)=$T_{c}$)b) [1-a exp(-1000 bL)} where $T_{c}$(e) and $T_{c}$ (b) are the values of $T_{c}$ in the absolute scale measured after and before chemical etching, respectively and L is the line width in mm. By utilizing a best fitting technique, the proper constant values of a and to b were found as exp(-1.2) and 0.22, respectively. This formula was very useful in estimatiing the upper limit of the device operationtemperature.