• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.12-17
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• 1999

$MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystals were grown in the rhombohedral structure by the chemical transport reaction (C.T.R.) method using iodine as a transport agent. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct band gap. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region by decreasing temperature and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The impurity optical absorption peaks due to nickel are observed in $MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Ni_{2+}$ ions located at $T_d$ symmetry site of $MgIn_2Se_4$ host lattice. In the hotoluminescence spectrum of the single crystal at 10 K, a blue emission with a peak at 687nm and a green emission with a peak at 815nm for the $MgIn_2Se_4$ single crystal were observed.

• 한국세라믹학회지
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• 제38권9호
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• pp.817-821
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• 2001

새로운 형광체로 역스피넬 구조를 갖는 $Mg_{2-x}MN_xSnO_4$ 조성을 선정하여 고상반응에 의하여 제조하였다. $Mg_2SnO_4:Mn$의 광발광 특성이 147nm 파장의 진공 자외선 여기하에 측정되었다. Mn의 첨가에 의하여 $Mg_2SnO_4$ 형광체는 500nm 파장에 발광 중심을 가지며 매우 높은 발광강도를 나타내었다. 이것은 스피넬 구조의 산소 사면체 배위에 위치하는 Mg 자리를 치환하여 들어가는 $Mn^{2+}$ 이온의 $^4T_1$ 상태로부터 $^6A_1$ 상태로의 에너지 전이에 의한 발광으로 해석되었다. 진공 자외선 여기하에 최대의 발광강도를 나타내는 Mn 활성제의 농도는 0.25mol%이었고, 잔광시간은 10ms 이하인 것으로 조사되었다.

• 한국초전도ㆍ저온공학회논문지
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• 제9권2호
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• pp.15-18
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• 2007

The sub micron sized spherical $MgB_2$ powders were synthesized by spray reaction method. $MgB_2$ tapes with Al addition were fabricated by Powder in Tube (PIT) method. The superconducting property and microstructure of Al doped $MgB_2$ tapes were characterized by X-ray diffraction, optical microscopy and transport measurement under magnetic field. The $J_c$ value of $MgB_2$ tapes was increased with 10 vol. % Al addition. The $J_c$ value of 5,500 A/$cm^2$ and 11,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape without heat treatment, respectively. The $J_c$ value of 8,000 A/$cm^2$ and 33,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c$-B curves show enhancement in $J_c$ (B), which suggests that the microstructure and transport properties of $MgB_2$ tapes have been improved with Al addition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1559-1560
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• 2007

BGR mixture phosphor pumped by 400 nm is developed for white-light-emitting diode of liquid crystal display backlight. White-emitting phosphor is prepared by mixing $Ba_2SiO_4:Eu^{2+}$ and $(Ba,Sr)_3MgSi_2O_8:Eu^{2+},Mn^{2+}$ phosphors.

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.211-212
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• 2007

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.85-85
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• 2007

• Bulletin of the Korean Chemical Society
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• 제31권11호
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• pp.3075-3076
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• 2010

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 자성 및 자성재료 국제학술대회
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• pp.130-130
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• 2014

• 한국광학회지
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• 제10권5호
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• pp.391-395
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• 1999

4% 물의 MgO가 도핑된 광굴절 $LiNbO_3$ 결정에 기록된 광굴절 격자의 회절 효율과 응답시간을 측정하였다. 이 실험에는 고출력 펄스 Nd:YAG 레이저(Q-switch mode,$\lambda$=532nm)와 연속 발진 아르곤 이온 레이저($\lambda$=514.5nm)가 사용되었다. 두 종류의 레이저 광속에 대한 실험에서 광학계의 배열을 동일하게 하고 2광파 혼합 조건에서 레이저 광속의 세기를 1.6~100W/$\textrm{cm}^2$까지 변화시켜가며 최대 회절 효율과 기록 및 소거시의 응답시간을 측정하였다. 두 실험에서 얻은 결과를 비교하고 분석 하였다.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.562-566
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• 2001

The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.