• 한국세라믹학회지
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• 제35권10호
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• pp.1101-1106
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• 1998

Various $Zn_{2-x}SiO_4$:xMn based green phosphors were investigated in association with a co-dopant. The co-dopant incorporated into the phosphors are believed to alter the internal energy state of $Zn_{2-x}SiO_4$ : xMn So that the improvement in their intensity could be expected. Phosphor samples were prepared using the solid state reaction therein raw powders are mixed in the acetone and successively fired at $1300^{\circ}C$ for 4 hour. The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmoshpere and thereby giving The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmosphere and thereby giving rise to conspicuous enhancement of radiative efficiency. Basically the 0.08 mole ratio of the Mn con-centrations has the maximum value of the intensity so that a co-dopant are added to this Mn con-centration. When the Mg is co-doped with Mn luminescent intensity is proven to be promoted significantly.

• 분석과학
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• 제8권4호
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• pp.669-674
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• 1995

The preparation and characterization of photosemiconductive electrodes of GaAs and of $Fe_2O_3$ doped with MgO or CaO were investigated. The doped $Fe_2O_3$ photosemiconductive electrodes were prepared from thin films sintered at temperatures from 1,100 to $1,450^{\circ}C$, and rapidly quenched in distilled water. The surfaces of the electrodes containing both corundum structure of $Fe_2O_3$ and spinel structure of $Mg_xFe_{3-x}O_4$ or $Ca_xFe_{3-x}O_4$ were analyzed by X-ray diffraction and scanning electron microscopy. The cathodic and anodic photocurrents on these electrodes indicated a critical doping amount of 5-11 wt. %. The photocurrents were enhanced when GaAs electrodes were treated with methylene violet the anodic photo-currents were temporarial enhanced and changed to the cathodic ptotocurrents after the surface was dryed.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• 한국세라믹학회지
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• 제39권11호
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• pp.1083-1089
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• 2002

알루미나 세라믹스에 MgO와 $TiO_2$를 각각 단독으로 첨가했을 때의 치밀화와 소결 거동을 수축률-소결 밀도 관계를 통해 비교 조사하였다. MgO가 첨가되었을 때는 소결 전과정을 통해 입성장은 억제되고 치밀화는 촉진되었으나, $TiO_2$가 첨가되었을 때는 입성장은 촉진된 반면 치밀화는 떨어졌다. 또한 입자 크기, 밀도, 수축률등을 통해 수축률-소결 밀도 관계를 구하여 최대 수축률을 나타내는 밀도값(Density of Maximum Shrinkage Rate:${\rho}$J.S.R)을 조사해 보았다. 이때 최대 수축률을 나타내는 밀도값보다 낮은 밀도를 보이는 영역에서는 치밀화가 입성장보다 우세하게 진행되었으며 최대 수축률을 나타내는 밀도값보다 높은 밀도의 영역에서는 입성장이 보다 우세하게 진행되는 것으로 추정하였다. 이때 최대 수축률을 나타내는 밀도값은 $TiO_2$가 첨가된 알루미나 < 순수 알루미나 < MgO가 첨가된 알루미나의 순서로 높은 값을 보였다.

• 한국초전도ㆍ저온공학회논문지
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• 제16권1호
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• pp.9-13
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• 2014

Effects of neutron irradiation on the superconducting properties of the undoped $MgB_2$ and the carbon(C)-doped $MgB_2$ bulk superconductors, prepared by an in situ reaction process using Mg and B powder, were investigated. The prepared $MgB_2$ samples were neutron-irradiated at the neutron fluence of $10^{16}-10^{18}n/cm^2$ in a Hanaro nuclear reactor of KAERI involving both fast and thermal neutron. The magnetic moment-temperature (M-T) and magnetization-magnetic field (M-H) curves before/after irradiation were obtained using magnetic property measurement system (MPMS). The superconducting critical temperature ($T_c$) and transition width were estimated from the M-T curves and critical current density ($J_c$) was estimated from the M-H curves using a Bean's critical model. The $T_cs$ of the undoped $MgB_2$ and C-doped $MgB_2$ before irradiation were 36.9-37.0 K and 36.6-36.8 K, respectively. The $T_cs$ decreased to 33.2 K and 31.6 K, respectively after irradiation at neutron fluence of $7.16{\times}10^{17}n/cm^2$, and decreased to 22.6 K and 24.0 K, respectively, at $3.13{\times}10^{18}n/cm^2$. The $J_c$ cross-over was observed at the high magnetic field of 5.2 T for the undoped $MgB_2$ irradiated at $7.16{\times}10^{17}n/cm^2$. The $T_c$ and $J_c$ variation after the neutron irradiation at various neutron fluences were explained in terms of the defect formation in the superconducting matrix by neutron irradiation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1093-1095
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• 2006

An orange-emitting phosphor for inorganic electroluminescent device has been studied. Cu and Cl were co-doped in Mn-doped ZnS for a high-performing phosphor. The effect of $Mn^{2+}-doping$ concentration as well as $Mg^{2+}-sensitizer$ addition on the luminescence characteristics has been investigated.

• 한국세라믹학회지
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• 제42권12호
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• pp.816-820
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• 2005

The doped-ceria is a strong candidate material for an intermediate temperature SOFC. However, the mechanical strength and the magnitude of electrical conductivity need to be increased at low sintering temperature. In this study, to improve both properties, $1at\% $ of Mg, Ca, Cr, Fe, Co, Ni, Cu, Ga, and Zr were added to the GDC20 ($20at\%$ Gd-doped Ceria) and sintered at $1350^{\circ}C$ that is $250^{\circ}C$ lower than $1600^{\circ}C$. With addition, the relative density of the sintered sample increased. Fe, Co, Ni, Cu, Ga doped-GDC20 showed high relative density over $92\%$. Among them, Ga doped-GDC20 showed the most improved sinterability. The conductivity of doped­GDC20 increased by $\~10$ times at $300\~700^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제33권12호
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• pp.3981-3986
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• 2012

Anatase nanocrystalline and its tungsten-doped (0.4, 2, and 4 mol %) powders have been synthesized by microwave irradiation through hydrolysis of titanium tetra-isopropoxide (TIP) in aqueous solution. The materials are characterized by XRD, Raman, SEM-EDX, TEM, FT-IR and UV-vis techniques. The nanocrystalline $TiO_2$ particles are 30 nm in nature and doping of tungsten ion decreases their size. As seen in TEM images, the crystallites of W (4 mol %) doped $TiO_2$ are small with a size of about 10 nm. The photocatalytic activity was tested on the degradation of 4-nitrophenol (4-NP). Catalytic activities of W-doped and pure $TiO_2$ were also compared. The results show that the photocatalytic activity of the W-doped $TiO_2$ photocatalyst is much higher than that of pure $TiO_2$. Degradation decreases from 96 to 50%, during 115 min, when the initial 4-NP concentration increases from 10 to 120 ppm. Maximum degradation was obtained at 35 mg of photocatalyst.

• 한국결정성장학회지
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• 제15권3호
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• pp.120-123
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• 2005

[ $Li_2CO_3-V_2O_5$ ], flux를 사용한 liquid phase epitaxy(LPE) 법을 사용하여 $LiNbO_3$ (001) 기판위에 5 mol% ZnO가 첨가된 $LiNbO_3$, 박막과 2 mol% MgO가 첨가된 $LiNbO_3$, 박막을 성장시켰다. $Zn:LiNbO_3$, 막과 $Mg:LiNbO_3$, 막과의 결정성과 격자 부정합은 x-ray rocking curve(XRC)로 분석되었다. 그리고 다층 박막의 단면에서의 ZnO와 MgO의 분포가 electron probe micro analyzer(EPMA)를 사용하여 관측되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1529-1530
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• 2007

The manganese co-doped $Ca_8Mg_1(SiO_4)_4Cl_2:Eu^{2+}$,$Mn^{2+}$ phosphor was synthesized by solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor show two emission spetrums: green band of 512nm and yellow band of 550nm. White light-emitting diodes (LEDs) were fabricated through combination of a 405nm-emitting InGaN chip and a synthesis phosphor in a single package. Under 20mA current, its CIE chromaticity coordinates are x=0.40 and y=0.45 and a color temperature of 4053K.