• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.472-476
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• 2014

We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.

• 한국재료학회지
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• 제30권10호
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.164-169
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• 2013

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing UV LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The $Mg_xZn_{1-x}O$ thin films have sufficient crystallinity on the high ZnO power. The EDS analyzed showed that the Mg content in the $Mg_xZn_{1-x}O$ films decreased from 3.99 to 24.27 at.% as the RF power of ZnO target increased. The Mg content in the $Mg_xZn_{1-x}O$ films could be controlled by co-sputtering power.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.278-278
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• 2012

용융아연 도금욕에 1~2% 정도 첨가된 Mg은 수지상 결정인 아연 스펭글의 크기를 미세화 시키고, 특히 $MgZn_2$ 및 $Mg_2Zn_{11}$ 금속간화합물로 석출되어 철에 대한 희생방식능을 높여 주는 역할을 함은 잘 알려진 사실이다. 여기서 Al은 수지상 결정인 아연 스펭글의 크기를 미세화 시키고는 역할도 하지만 $MgZn_2$ 및 $Mg_2Zn_{11}$ 석출의 총량을 감소시키지만 또한 $MgZn_2/Mg_2Zn_{11}$ 비를 증가시키는 역할을 함을 알 수 있었다. 특히 Al 및 Mg을 각각 2% 정도 첨가함으로 염수분무실험에서 도금층의 부식량이 일반 아연도금층에 비해 1/3 정도로 되었다.

• 한국주조공학회지
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• 제17권6호
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• pp.592-597
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• 1997

The microstructure and tensile properties of Mg-Zn-Ca and Mg-Zn-Mn-Ca alloys have been investigated. The alloys were obtained by melting in a low carbon crucible coated with boron nitride under an Ar gas atmosphere to prevent oxidation and combustion. The Mg alloy melt was cast into the metallic mold at room temperature, and cooling part was located at the bottom of mold. The phase formed during solidification of the Mg-Zn-(Mn) alloys containing 0.5%Ca is $Ca_2Mg_6Zn_3$. The yield strength and ultimate tensile strength of the alloys increased with increasing Zn content, but the ductility did not change with increasing Zn content. The addition of Mn improves the yield strength and ultimate tensile strength of the alloys, but the ductility did not change. Tensile fracture of the alloys revealed brittle failure, with cracking along the $Ca_2Mg_6Zn_3$ phase. The variation of stress with strain obeyed the relationship of the ${\sigma}=K{\varepsilon}^n$.

• 열처리공학회지
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• 제28권3호
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• pp.126-133
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• 2015

The aim of this study is to investigate the effect of solution treatment on the corrosion behavior of Mg-8%Al-(0-1)%Zn casting alloys in 1M NaCl aqueous solution. After the solution treatment, all alloys showed single ${\alpha}$-(Mg) phase microstructure by dissolution of ${\beta}(Mg_{17}Al_{12})$ phase into the ${\alpha}$-(Mg) matrix. The $H_2$ evolution volume decreased with an increase in Zn content, which indicates that the addition of Zn plays a beneficial role in decreasing corrosion rate of the Mg-Al-Zn alloy in solution-treated state. The microstructural evaluations on the corrosion products and corroded surfaces after the immersion test in 1 M NaCl solution revealed that the incorporation of more $Al_2O_3$ and ZnO into the corrosion product, by which the penetration of $Cl^-$ ions is impeded, are thought to be responsible for the better corrosion resistance in relation with the Zn addition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.208-208
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• 2013

ZnO는 직접천이형 반도체로 약 3.37 eV의 넓은 에너지 band-gap과 60 meV의 비교적 큰 엑시톤 결합 에너지를 가지고 있다. 또한 단결정 성장 가능과 투명성 등 많은 장점들로 인하여 GaN와 대체할 자외선 또는 청색 발광소자나 ITO를 대체할 투명전극 같은 광범위한 광전소자로 큰 주목을 받으며 연구되어 왔다. 이러한 ZnO는 다양한 물질들의 첨가를 통해 인위적으로 특성변화가 가능한데 Mg, Be, Cd 첨가를 통한 에너지 밴드갭의 확장과 수축, Al 첨가를 통한 전기전도성의 증가 등이 그 예이다. 최근에는 밴드갭 조절을 이용한 ZnO-ZnMgO와 같은 이종접합구조가 광소자 등의 응용을 목적으로 많은 연구가 이루어지고 있다. 더불어 나노선이나 나노막대 같은 1차원 구조를 갖는 ZnO 계열 반도체의 연구는 현재 큰 이슈가 되고 있는 나노 크기의 소자 개발에 매우 큰 적용 가능성을 가지고 있다. 우리는 수열합성법을 이용하여 hexagonal ZnO 나노막대를 성장하고 그 표면에 core-shell 형태의 $ZnO-Zn_{1-x}Mg_xO$ (x=0.084) 양자우물을 원자층증착법으로 증착하였다. 본 연구에서는 만들어진 ZnO 나노막대와 ZnO-ZnMgO 나노막대, core-shell ZnO-ZnMgO 양자우물 sample들의 저온(5 K) Photoluminescence 측정을 통하여 광학적 band 구조를 분석하였다. 실험적으로 의도된 양자우물 두께와 다른 실제 형성된 양자무물의 두께를 알아내기 위하여 2차원 hexagonal 양자우물 band 구조에서 self-consistent nonlinear Poisson-Schr$\"{o}$dinger 방정식 계산과 컴퓨터 시뮬레이션을 이용하였으며, 이 방법으로 계산된 값과 실험값의 비교를 통하여 실제 형성된 양자우물의 두께를 정량적으로 유출할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.279-279
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• 2012

마그네트론 스퍼터링을 이용하여 다양한 조성의 Zn-Mg 합금 박막을 CR 강판에 합성하여 내식성 및 밀착성에 대하여 연구하였다. Zn-Mg 박막의 밀착성은 박막의 Mg 조성이 높을수록 감소하는 경향을 나타냈으며, 내식성은 ASTM B117조건에 따른 SST 시험에서 7wt.%Mg 타겟을 사용하여 합성한 박막이 가장 우수한 특성을 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• 한국재료학회지
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• 제25권6호
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• pp.269-273
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• 2015

The effect of adding Ca on the microstructural and mechanical properties of as-cast Mg-11Li-3Zn-1Sn(wt%) alloys were investigated. Mg-11Li-3Zn-1Sn-0.4Mn with different Ca additions (0.4, 0.8, 1.2 wt%) were cast under an $SF_6$ and $Co_2$ atmosphere at $720^{\circ}C$. The cast billets were homogenized at $400^{\circ}C$ for 12h and extruded at $200^{\circ}C$. The microstructural and mechanical properties were analyzed by OM, XRD, SEM, and tensile tests. The addition of Ca to the Mg-11Li-3Zn-1Sn-0.4Mn alloy resulted in the formation of $Ca_2Mg_6Zn_3$, MgSnCa intermetallic compound. By increasing Ca addition, the volume fraction and size of $Ca_2Mg_6Zn_3$ with needle shape were increased. This $Ca_2Mg_6Zn_3$ intermetallic compound was elongated to the extrusion direction and refined to fine particles due to severe deformation during hot extrusion. The elongation of the 0.8 wt% Ca containing alloy improved remarkably without reduction strength due to the formation of fine grain and $Ca_2Mg_6Zn_3$ intermetallic compounds by Ca addition. It is probable that fine and homogeneous $Ca_2Mg_6Zn_3$ intermetallic compounds played a significant role in the increase of mechanical properties.