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http://dx.doi.org/10.4313/JKEM.2013.26.2.164

The Structural Characteristics of MgxZn1-xO Thin Films with Sputtering Power by Co-sputtering Method  

Kim, Sang Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University)
Son, Jihoon (DRAM Development Division, SK Hynix)
Jang, Nakwon (Division of Electrical and Electronics Engineering, Korea Maritime University)
Kim, Hong Seong (Department of Nano Semiconductor Engineering, Korea Maritime University)
Yun, Young (Department of Radio Communication Engineering, Korea Maritime University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.2, 2013 , pp. 164-169 More about this Journal
Abstract
The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing UV LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The $Mg_xZn_{1-x}O$ thin films have sufficient crystallinity on the high ZnO power. The EDS analyzed showed that the Mg content in the $Mg_xZn_{1-x}O$ films decreased from 3.99 to 24.27 at.% as the RF power of ZnO target increased. The Mg content in the $Mg_xZn_{1-x}O$ films could be controlled by co-sputtering power.
Keywords
MgZnO; UV LED; EDS; Oxide semiconductor; Grain size;
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