• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.781-789
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• 1997

Pressure sintered SiC specimens were joined using MgO-Al2O3-SiO2 (MAS) glass which has a thermal expansion coefficient similar to that of SiC. MAS melt showed excellent behavior of wetting on the SiC substrate over 148$0^{\circ}C$, and the wettability was much influenced by the joining atmosphere. The joining was conducted at 150$0^{\circ}C$ for 30 min in Ar atmosphere. The flexural strength of the joined specimen shows 342~380 MPa up to 80$0^{\circ}C$, which is almost the same as that of as-recieved SiC specimen. However, the flexural strength of the joined specimen decreased to about 80 MPa at 90$0^{\circ}C$ due to softening of the glass melt. The analyses od XRD and WDS show that the reaction between the SiC specimen and the MAS melt produces the oxycarbide glass, which had a high strength and a good stability at high temperatures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.47-48
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• 2007

본 실험에서는 MgO (99.999%)와 ZnO (99.999%)의 두가지 타겟을 사용한 RF co-스퍼터링법을 이용하여 p-type Si (100) 기판 위에 $Zn_{1-x}Mg_xO$ 박막을 증착 하였다. ZnO 타겟의 RF-power은 고정시키고 MgO 타겟의 RF-power를 조절함으로써 Mg 함량을 조절하였다. EDX분석을 통해 MgO RF-power의 증가에 따라 고용되는 Mg의 함량이 증가함을 알 수 있었다. 또한 MgZnO내 Mg 함량이 높아짐에 따라 c-축 격자상수가 감소하는 것을 XRD분석을 통해 알 수 있었고, MgO기반의 2차상은 형성되지 않았다. PL 측정을 통해 Mg함량이 증가 할수록 UV 영역의 파장의 강도는 감소하고 UV 파장의 위치는 blueshift되는 것을 관찰 할 수 있었다.

• Horticultural Science & Technology
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• v.30 no.3
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• pp.250-255
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• 2012

The effect of different source silicon ($CaSiO_3$, $K_2SiO_3$, and $NaSiO_3$) and their application methods (foliar application and subirrigation) on the growth of potted kalanchoe was investigated. Rooted terminal cuttings of Kalanchoe blossfeldiana 'Peperu' were transplanted into 10.5 cm plastic pots containing a commercial growing medium. Then, a nutrient solution, containing 0 or $50mg{\cdot}L^{-1}$ Si as $K_2SiO_3$, $Na_2SiO_3$, or $CaSiO_3$ and adjusted to EC 1.4-$1.6mS{\cdot}cm^{-1}$ and pH 6.0, was supplied through subirrigation along with the nutrient solution or by a foliar application. Plants were grown in a glasshouse under a mean temperature of $23^{\circ}C$ and RH of 70-80%. After 12 weeks of cultivation, plant growth characteristics and leaf tissue contents of P, K, Ca, Mg, Na, S, and Si were measured. Both subirrigational supply and foliar application of Si decreased the plant height and flower stem length. However, the plant condition in the foliar application resulted in disease-like soft rot on the leaf. Among three silicon sources tested, $CaSiO_3$ supplied through a subirrigation system increased shoot tissue contents of Si and chlorophyll as compared to the $Na_2SiO_3$ or $K_2SiO_3$ treatment. Shoot tissue contents of Ca, K, and Na increased when the plant was supplied with $CaSiO_3$, $K_2SiO_3$, and $Na_2SiO_3$, respectively. Subirrigational supply of $K_2SiO_3$ and $NaSiO_3$ decreased the shoot tissue contents of Ca and Mg, and K and Ca, respectively. Therefore, $CaSiO_3$ supplied through a subirrigation system could improve plant quality of kalanchoe 'Peperu' making compact potted plants.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.303-309
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• 1998

The fabrication of Al2O3/Al composite by pressureless infiltration was investigated by the change of Mg and Si content in Al alloy infiltration process and infiltration atmosphere. The effect of alloying elements infiltration atmosphere and interfacial reactants between Al alloy matrix and Al2O3 particles were in-vestigated in terms of bendingstrength and harness test,. The fabrication of Al2O3/Al composite by the vestigated in terms of bending strength and hardness test. The fabrication of Al2O3/Al composite by the pressureless infiltration was done in nitrogen atmosphere with Mg in Al alloy. It was successfully fabricated at $700^{\circ}C$ according to Mg contents in Al alloy and infiltration condition. Because Mg in the Al alloy and ni-trogen atmosphere of infiltratio condition produced Mg-N compound(Mg3N2) it decreased the wetting an-gle between molten Al alloy and Al2O3 particles by coating on surface of Al2O3 particles. The fracture strength of Al2O3/Al-Mg composite was 800MPa and Al2O3/Al-Si-Mg composite was 400MPa. Si in Al alloy decreased the interfacial strength between Al alloy matrix and Al2O3 particles.

• Journal of the Mineralogical Society of Korea
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• v.1 no.2
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• pp.94-103
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• 1988

Diamond anvil cell (DAC) interfaced with a YAG laser heating system has been used to study the phase transformations on perovskite structured titanates ($BaTiO_3$, and $PbTiO_3$) and to synthesize the silicate perovskite phase from the orthopyroxenes of $MgSiO_3$ and $(Mg_{0.87},\;Fe_{0.13})SiO_3$. $BaTiO_3$ and $PbTiO_3$ transform from tetragonal phase to cubic at the pressures of approximately 2.6 GPa and 4.0 GPa at room temperature, respectively. Cubic phases of the both show wide range of stability in the extended in-situ high pressures and high temperature regions. Starting orthoenstatite of $MgSiO_3$ has yielded the perovskite phase as the major structure with ilmenite, gamma-spinel, betta-spinel and stishovite phases at ~38 GPa and ${\sim}1,000^{\circ}C$. $(Mg_{0.87},\;Fe_{0.13})SiO_3$ has shown the perovskite as the major phase with betta-spinel, stishovite and enstatite phases at ~35 GPa and ${\sim}1,000^{\circ}C$. The ilmenite phase does not occur at this condition.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.410-416
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• 1999

The reactivity of three kinds of spinels which CaO-Al2O3-SiO2 slag was investigated in terms of mineral phases and microstructures. New crystal products were not formed by reaction of 12CaO.7Al2O3 in the slag with spinels and free MgO components was preferenctially dissolved into slag for MgO-rich spinel and stoichiometric spinel. Meanwhile mineral phase was changed from 12CaO.7Al2O3 to CaO.Al2O3 to CaO.2Al2O3 finally to CaO.6Al2O3 having high melting point for Al2O3 -rich spinel. The Fe-oxide component of the slag was taken up by only stoichiometric spinel grains within the spinel clinker and the trapped amount of Fe-oxide was independent of MgO content of MgO in spinel clinker the more th resistance to slag corrosion but the less resistance to slag penetration.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.68-68
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• 2000

펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.127-131
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• 2001

The effect of grain shape on the grain growth behavior of oxide system was investigated as afunction of liquid content during liquid phase sintering. As a model system, the solid grains of $Al_{2}O_{3}$ and MgO were selected during liquid phase sintering, i.e. faceted shape of $Al_{2}O_{3}$ in $CaAl_{2}Si_{2}O_{8}$ liquid phase and spherical shape of MgO in $CaMgSiO_{4}$ liquid phase. The average grain size of MgO with spherical shape was decreased with increasing the liquid phase content, whereas that of $Al_{2}O_{3}$ with faceted shape was independent of liquid phase content. In the case of $Al_{2}O_{3}$ grains with faceted shape, which interfaces are expected to be atomically flat, are likely to grow by the interfacial reaction controled process. Whereas, in the case of MgO grains with spherical shape, which interface are expected to be atomically rough, are likely to grow by the diffusion controlled process.