• 한국수소및신에너지학회논문집
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• 제23권5호
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• pp.429-436
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• 2012

Mg and Mg-based alloys are regarded as strong candidate hydrogen storage materials since their hydrogen capacity exceeds that of known metal hydrides. One of the approaches to improve kinetic is addition of metal oxide. In this paper, we tried to improve the hydrogenation properties of Mg-based hydrogen storage composites. The effect of transition metal oxides, such as $Nb_2O_5$ on the kinetics of the Magnesium hydrogen absorption kinetics was investigated. $MgH_x$-5wt.% $Nb_2O_5$ composites have been synthesized by hydrogen induced mechanical alloying. The powder fabricated was characterized by X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (Fe-SEM), Energy Dispersive X-ray (EDX), BET and simultaneous Thermo Gravimetric Analysis / Differential Scanning Calorimetry (TG/DSC) analysis. The Absorption / desorption kinetics of $MgH_x$-5wt.% $Nb_2O_5$ (type I and II) are determined at 423, 473, 523, 573 and 623 K.

• 열처리공학회지
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• 제19권5호
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• pp.257-261
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• 2006

Scandium(Sc) in Al-Zn-Mg-Cu based Al alloy on precipitation phenomenon was compared to a 7001(Al-7.2%Zn-3.2%Mg-1.8%Cu) Al alloy. GP zone and ${\eta}^{\prime}$ phases were the main strengthening phases at low aging temperature under $100^{\circ}C$, but ${\eta}^{\prime}$ and $Al_3Sc$ phases were the main strengthening phases at high aging temperature above $1600^{\circ}C$ in Sc added 7000(Al-7.7%Zn-2.0%Mg-1.9%Cu-0.1%Zr) Al alloy. With the addition of 0.1%Sc in 7000 Al alloy, the activation energy for the GP zone, ${\eta}^{\prime}$ and ${\eta}$ phase decreased compared to the 7001 Al alloy. This result indicates that the Sc accelerated the precipitation for the GP zone, ${\eta}^{\prime}$ and ${\eta}$ phases in 7000 Al alloy. Al-7.7%Zn-2.0%Mg-1.9%Cu-0.1%Zr-0.1 Sc alloy has higher strength than 7001 Al alloy, which has high strength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국재료학회지
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• 제33권2호
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• pp.63-70
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• 2023

In this study, crystallization was effectively suppressed in Al-based metallic glasses (Al-MGs) during pulverization by cryo-milling by applying an extremely low processing temperature and using a surfactant. Before Al-MGs can be used as an additive in Ag paste for solar cells, the particle sizes of the Al-MGs must be reduced by milling. However, during the ball milling process crystallization of the Al-MG is a problem. Once the Al-MG is crystallized, they no longer exhibit glass-like behavior, such as thermoplastic deformation, which is critical to decrease the electrical resistance of the Ag electrode. The main reason for crystallization during the ball milling process is the heat generated by collisions between the particles and the balls, or between the particles. Once the heat reaches the crystallization temperature of the Al-MGs, they start crystallization. Another reason for the crystallization is agglomeration of the particles. If the initially fed particles become severely agglomerated, they coalesce instead of being pulverized during the milling. The coalesced particles experience more collisions and finally crystallize. In this study, the heat generated during milling was suppressed by using cryo-milling with liquid-nitrogen, which was regularly fed into the milling jar. Also, the MG powders were dispersed using a surfactant before milling, so that the problem of agglomeration was resolved. Cryo-milling with the surfactant led to D50 = 10 um after 6 h milling, and we finally achieved a specific contact resistance of 0.22 mΩcm² and electrical resistivity of 2.81 μΩcm using the milled MG particles.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.636-639
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• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• The Korean Journal of Ceramics
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• 제1권1호
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• pp.13-20
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• 1995

Effects of thermal annealing on the dielectric/piezoelectric properties of $Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$ ceramics (PZMNPT) with Zn/Mg=6/4) were examined across the rhombohedral/tetragonal morphotropic phase boundary (MPB). Both the relative dielectric permittivity ($\varepsilon$r)and the piezoelectric constant($d_33$)/electromechanical coupling constant ($k_p$)were increased by thermal annealing ($800^{\circ}$~$900^{\circ}C$) after sintering at $1150^{\circ}C$ for 1 hr. Based on the dielectric analysis using the series mixing model and the concept of a random distribution of the local Curie points, the observed improvements in the dielectric and piezoelectric properties of PZMN-PT were interpreted in terms of the elimination of PbO-rich amorphous intergranular layers(~1nm) induced by thermal annealing. A concrete evidence of the presence of amorphous grain-boundary layers in the unannealed (as-sintered) specimen was obtained by examining the structure of intergranular region using a TEM.

• Journal of the Korean Wood Science and Technology
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• 제33권2호통권130호
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• pp.29-39
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• 2005

Formaldehyde emissions from wood-based panels bonded with pine and wattle tannin-based adhesives, urea-formaldehyde resin (UF), melamine-formaldehyde resin (MF), and co-polycondensed resin of urea-melamine-formaldehyde (UMF) were measured by the Japanese standard method using a desiccator (JIS A 1460) and the EN 120 (European Committee For Standardization, 1991) method using the perforator value. In formaldehyde emission, all particleboards made using the wattle tannin-based adhesive with three different hardeners, paraformaldehyde, hexamethylenetetramine, and tris(hydroxyl)nitromethan (TN), satisfied the requirements of grade $E_1$. But only those made using the pine tannin-based adhesive with the hexamine as hardener met the grade $E_1$ requirements. Hexamine was effective in reducing formaldehyde emission in tannin-based adhesives when used as the hardener. While the UF resin showed a desiccator value of $7.1mg/{\ell}$ and a perforator value of 12.1 mg/100 g, the MF resin exhibited a desiccator value of $0.6mg/{\ell}$ and a perforator value of 2.9 mg/100 g. According to the Japanese Industrial Standard and the European Standard, the formaldehyde emission level of the MDF panels made with UF resin in this study came under grade $E_2$. The formaldehyde emission level was dramatically reduced by the addition of MF resin. The desiccator and perforator methods produced proportionally equivalent results. Gas chromatography, a more sensitive and advanced method, was also used. The samples for gas chromatography were gathered during the experiment involving the perforator method. The formaldehyde contents measured by gas chromatography were directly proportional to the perforator values.

• 한국결정성장학회지
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• 제27권6호
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• pp.275-281
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• 2017

AlN는 넓은 밴드 갭 및 높은 열전도율로 인해 넓은 밴드 갭 및 고주파 전자 소자로 유망한 재료이다. AlN은 전력 반도체의 재료로서 더 큰 항복전압과 고전압에서의 더 작은 특성저항의 장점을 가지고 있다. 높은 전도도를 갖는 p형 AlN 에피층의 성장은 AlN 기반 응용 제품 제조에 중요하다. 본 논문에서는 Mg이 도핑된 AlN 에피층을 혼합 소스 HVPE에 의해 성장하였다. Al 및 Mg 혼합 금속은 Mg-doped AlN 에피 층의 성장을 위한 소스 물질로 사용하였다. AlN 내의 Mg 농도는 혼합 소스에서 Mg 첨가 질량의 양을 조절함으로써 제어되었다. 다양한 Mg 농도를 갖는 AlN 에피 층의 표면 형태 및 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. Mg-doped AlN 에피 층의 XPS 스펙트럼으로 부터 혼합 소스 HVPE에 의해 Mg을 AlN 에피 층에 도핑할 수 있음을 증명하였다.

• 자원리싸이클링
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• 제31권6호
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• pp.44-51
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• 2022

현재 전기로(EAF) 제강 공정에서는 내화재 보호 및 탈황능 개선을 위해 MgO 함유 Flux인 경소돌로마이트를 사용하고 있으며, 탈산 효과와 동시에 Slag foaming을 통한 전력에너지를 저감시키기 위해 가탄제를 투입하고 있다. 본 연구에서는 상기 효과들을 경제적으로 달성하기 위해 폐 MgO-C계 내화재를 사용하고자 한다. 폐 MgO-C계 내화재는 현재 대부분 재활용되지 못하고 폐기되고 있는 실정이지만 다량의 MgO와 흑연 성분을 함유하고 있어 제강용 Flux로서의 효용가치가 입증되면 대량 재활용이 가능할 것으로 기대된다. 본 실험에서는 상용 EAF slag 조성을 토대로 Target 조성 범위를 설정하였다. Target EAF slag가 원만히 형성될 수 있도록 하기 위해 Flux와 함께 투입될 Pre-melt base slag를 제조하였다. Pre-melt base slag는 SiO₂, Al₂O₃, FeO를 혼합하여 알루미나 도가니에 장입 후 1450℃에서 1시간 이상 가열하여 제조하였다. 이후 제조된 Pre-melt base slag에 혼합 Flux #2(경소돌로마이트+폐 MgO-C계 내화재+석회석)을 가하여 용융반응 시험을 수행하고 그 결과를 기존 제강 Flux에 해당하는 혼합 Flux #1(경소돌로마이트+석회석) 경우와 비교 평가하여 그 대체 가능성을 평가하였다. 신뢰성있는 평가를 도출하기 위해 XRD, XRF 및 Slag foam height, Slag basicity, 철 회수 등의 평가를 종합하였다.