• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1023-1031
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• 1996

A new synthetic route for the lanthanum β-diketonate compounds via in-situ formed lanthanum alkyl complexes was developed in the process for the development of suitable MOCVD (metal-organic chemical vapor deposition) precursors of PLT, one of the promising material for the ferroelectric film. A series of lanthanum β-diketonate compounds were successfully synthesized by this method. This new method is found to have some merits; versatile method for almost every β-diketone, β-hydroxyketone, and β-hydroxyaldehyde, short reaction time, easy purification for high purity, moderate to high yield, and easy access to anhydrous compounds. In some cases, anhydrous oligomeric products fail to show the higher volatility. On the other hand, some lanthanum β-diketonates with aromatic groups such as La(1,3-biphenyl-l,3-propandione)3 are found to have favorable properties for a precursor of lanthanum oxide, one of major components of PLT, such as low melting point, and much higher decomposition temperature. A plausible pyrolysis mechanism is proposed by the TGA, where consecutive dissociation of R, CO, CH, C, and O fragments occurs.

• Bulletin of the Korean Chemical Society
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• v.16 no.2
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• pp.149-153
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• 1995

We have grown GaAs epilayers by chemical beam epitaxy(CBE) using unprecracked hydrides and metal organic compounds via a surface decomposition process. This result shows that unprecracked arsine (AsH3) or monoethylarsine (MEAs) can be used in chemical beam epitaxy(CBE) as a replacement of a precracked AsH3 source in CBE. It was also found that the uptake of carbon impurity in epilayers grown using trimethylgallium(TMG) with unprecracked AsH3 or MEAs was significantly reduced compared to that in epilayers grown by CBE process employing TMG and arsenics produced from precracked hydrides. We propose a surface structural model suggesting that the hydrogen atoms play an important role in the reduction of carbon content in GaAs epilayer. Intermediates like dihydrides from hydride sources were also considered to hinder carbon atoms from being incorporated into the epilayers or to remove other carbon containing species on the surface.

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.285-288
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• 2009

A synthetic route for 12 metal thiocarboxylate complex, $Cd(SOCCH_3)_2Lut_2$ [Lut = 3,5-dimethylpyridine (lutidine)], were investigated for their potential to act as precursors for the formation of cadmium sulfide nanoparticles. $Cd(SOCCH_3)_2Lut_2$ were characterized by 1H-NMR spectroscopy. Thermal decomposition of $Cd(SOCCH_3)_2Lut_2$ is expected to undergo thiocarboxylic anhydride elimination to give stoichiometric cadmium sulfide nanoparticles and removes the organic supporting ligands cleanly. Prepared cadmium sulfide nanoparticles were characterized by fluorescence and UV-vis absorption spectroscopy and displayed an emission band at 500 nm with an excitation wavelength of 360 nm.

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.73-78
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• 2009

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.936-944
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• 1995

The effects of Spinodal decomposition induced phase separated microstructure of InGaAsP/InP heterostructure on photoluminescence(PL) intensity and FWHM(full-width at half maximum) were investigated in this study. Lattice mismatches were measured by double crystal x-ray diffractometer, and the microstructures of phase separated InGaAsP were observed by transmission electron microscopy. It was found that the misfit stress calculated from lattice mismatch was related to the periodicity of Spinodal modulation. Strong dependence of PL intensity and FWHM on the modulation periodicity was also found. For systematic understanding of these observations, the interaction elastic strain energy function induced by misfit stress was proposed. The calculation illustrated that the microstructure of the epilayer such as Spinodal decomposition played an important role in determining the optoelectronic properties such as PL intensity and PL FWHM.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.95-99
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• 2003

We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.1-5
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• 2010

Cu(II)-organic complexes were synthesized with Lewis base organic ligands including diamine, aminothiol, and dithiol to determine the reactivity for DFP hydrolysis. Results show that the aminothiol catalyst enhances the hydrolysis of DFP in three folds compared to diamine type because aminothiol has higher basicity than diamine. Due to low solubility of Cu(II)(1,2-ethane dithiol)$(NO_3)_2$, it is impossible to compare directly the rates in homogeneous condition. However, the rate of dithol complex is even 1.6 times faster than that of the diamine type. The reactivity of zeolite for DFP hydrolysis is also evaluated. NaY type does not promote the hydrolysis, but RuNaY shows relatively lower reactivity than those of Cu(II)-organic ligands complexes.

• Korean Chemical Engineering Research
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• v.43 no.2
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• pp.206-214
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• 2005

Heterogeneously-catalyzed oxidation of aqueous phase trichloroethylene (TCE) over supported metal oxides has been conducted to establish an approach to eliminate ppm levels of organic compounds in water. A continuous flow reactor system was designed to effect predominant reaction parameters in determining catalytic activity of the catalysts for wet TCE decomposition as a model reaction. 5 wt.% $CoO_x/TiO_2$ catalyst exhibited a transient period in activity vs. on-stream time behavior, suggesting that the surface structure of the $CoO_x$ might be altered with on-stream hours; regardless, it is probable to be the most promising catalyst. Not only could the bare support be inactive for the wet decomposition reaction at $36^{\circ}C$, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. Very low TCE conversion appeared for $TiO_2$-supported $NiO_x$ and $CrO_x$ catalysts. Wet oxidation performance of supported Cu and Fe catalysts, obtained through an incipient wetness and ion exchange technique, was dependent primarily on the kinds of the metal oxides, in addition to the acidic solid supports and the preparation routes. 5 wt.% $FeO_x/TiO_2$ catalyst gave no activity in the oxidation reaction at $36^{\circ}C$, while 1.2 wt.% Fe-MFI was active for the wet decomposition depending on time on-stream. The noticeable difference in activity of the both catalysts suggests that the Fe oxidation states involved to catalytic redox cycle during the course of reaction play a significant role in catalyzing the wet decomposition as well as in maintaining the time on-stream activity. Based on the results of different $CoO_x$ loadings and reaction temperatures for the decomposition reaction at $36^{\circ}C$ with $CoO_x/TiO_2$, the catalyst possessed an optimal $CoO_x$ amount at which higher reaction temperatures facilitated the catalytic TCE conversion. Small amounts of the active ingredient could be dissolved by acidic leaching but such a process gave no appreciable activity loss of the $CoO_x$ catalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.825-830
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• 2014

$[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ ($0{\leq}x{\leq}1$) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ (CCNMO) film annealed at $500^{\circ}C$ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of $53{\Omega}{\cdot}cm$ at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of $5.9{\Omega}{\cdot}cm$. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than $-2%/^{\circ}C$ for all the specimens with $x{\geq}0.6$. These results imply that the CCNMO ($x{\geq}0.6$) thin films are a good candidate material for infrared sensor application.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.775-780
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• 1995

Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.