• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• Journal of Korean Society on Water Environment
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• v.31 no.6
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• pp.632-636
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• 2015

This study aims to evaluate arsenic adsorption efficiencies over various metal oxides (CeO₂, TiO₂, Fe₃O₄, ZrO₂, AlOOH, SiO₂, α-Al₂O₃, and γ-Al₂O₃) and investigate the correlation between physico-chemical characteristics of metal oxides and their efficiencies. From XPS, XRD BET analysis and isotherm adsorption test, TiO₂ powder showed that the best adsorption efficiency, and it's mechanism was highly depended on the chemical adsorption.

• Journal of Powder Materials
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• v.11 no.3
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• pp.259-264
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• 2004

Aluminum based metal matrix composite reinforced with SiC particles was fabricated by the powder-in sheath rolling method. A stainless steel tube with outer diameter of 12 mm and wall thickness of 1mm was used as a sheath. Mixture of aluminum powder and SiC particles of which volume content was varied from 5 to 20vol.% was filled in the tube by tap filling and then rolled to 75% reduction at ambient temperature. The rolled specimen was sintered at 56$0^{\circ}C$ for 0.5hr. The tensile strength of the (SiC)$_{p}$/Al composite increased with the volume content of SiC particles, and at 20vol.% it reached a maximum of 100㎫ which is 1.6 times higher than unreinforced material. The elongation decreased with the volume content of $Al_{2}$O$_{3}$ particles. The mechanical properties of the (SiC)$_{p}$/Al composite fabricated by the powder-in sheath rolling is compared with that of (Al$_{2}$O$_{3}$)$_{p}$/Al composite by the same process.ess.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.44-47
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• 1998

A reduction/oxidation reaction between A1 metal powder and SiO2 powder was performed by Self-propagating High-temperature Synthesis (SHS) reaction induced by microwave energy to produce a composite of Al2O3 and Si powders by using a 2.45 GHz kitchen model microwave oven. A Microwave Hybrid Heating(MHH) method was applied by using SiC powders as a suscepting material to raise the temperature of the disk samples and the heat increase rate of over 100℃/min were obtained before the reaction. The reaction started around 850℃ and the heat increase rate jumped to over 200℃/min after the reaction took place.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.162-162
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• 2012

Sub 100 nm의 Complementary Metal-Oxide-Semiconductor (CMOS) 소자를 구동하기 위해서는 2.0 nm 이하의 $SiO_2$ oxide에 해당하는 전기적 특성이 요구된다. 그러나 2.0 nm 이하의 $SiO_2$에서는 누설 전류가 너무 크기 때문에 이를 대체하기 위해서 유전 상수 (dielectric permittivity)가 높은 $HfO_2$ (${\varepsilon}=25$), $Al_2O_3$, $HfO_2/Al_2O_3$ laminate 등의 high-k dielectric 물질들이 연구되고 있다[1]. High-k dielectric 물질의 전기적 특성은 박막 조성, 두께 및 전극과의 계면에 생성되는 계면 층이나 불순물(Impurity) 거동에 크게 의존하므로 High-k dielectric/전극(Metal or Si) 구조에서 조성 및 불순물의 거동에 대한 정확한 평가가 주요 쟁점으로 부각되고 있다. 이를 평가하기 위해 일반적으로 $Ar^+$ ion에 의한 depth profiling 분석이 진행되나 Oxygen 원자의 선택적 식각에 기인된 분석 깊이 분해능(Depth Resolution) 왜곡으로 계면 층의 형성이나 불순물의 거동을 정확하게 평가할 수 없다. 이러한 예로는 $Ta_2O_5$ 및 $SrBi_2Ta_2O_9$와 같은 다 성분 계 산화막에 $Ar^+$ ion 주사 시 발생하는 선택적인 식각(Preferential Sputtering) 때문에 박막의 실제 조성 및 거동을 평가하는 것은 어렵다고 보고된 바 있다[2,3]. 본 연구에서는 $90{\AA}$인 적층 $Hf_xO_y/Al_xO_y/Hf_xO_y$ 구조에서의 불순물 거동 분석 능력 확보 상 주요 인자인 깊이 분해능 개선을 Secondary Ion Mass Spectroscopy(SIMS)의 primary ion 종, impact energy 및 주사 각도를 변화시켜 ~1 nm 수준까지 구현하였다. 이러한 분석 깊이 분해능의 개선은 Low Impact Energy, 입사 이온의 glancing angle 및 Cluster ion 적용에 의존하며 이들 요인의 효과에 대해 비교/고찰하고자 한다.

• Journal of Welding and Joining
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• v.14 no.6
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• pp.93-100
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• 1996

Effect of a flux composition on weld metal toughness in submerged arc welding with 60kgf/$\textrm{mm}^2$ grade C-Mo type wires was investigated and interpreted in terms of weld metal microstructure and hardenability. Flux workability was also studied by characterizing a weld bead profile. Compared to other weld metals, .weld metal used alumina basic flux with nickel showed lowest oxygen content, highest hardenability and the most acicular ferrite. The highest impact toughness of that weld metal, however, was attributed to the tough matrix due to the nickel rather than to the larger amount of acicular ferrite. Manganese silicate flux had better workability than alumina basic flux, showing broader welding conditions resulting in a depth-to-width ratio of 0.5. The composition of oxides in the weld metal was dependent on the flux composition, showing MnO-SiO$_2$-TiO in manganese silicate flux and MnO-SiO$_2$-Al$_2$O$_3$-TiO in alumina basic flux. MnO-SiO$_2$composition in both oxides was similar to a tephroite.

• Journal of the Korean institute of surface engineering
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• v.20 no.2
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• pp.49-59
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• 1987

The properties of $Cr_2O_3-Al_2O_3-SiO_2$ composite oxide coatings on steel surface were investigated. The results obtained were as follows: The microhardness of oxide coating layer increased with increasing heat-treatment temperature and $Cr_2O_3$ content in coating layer. The hardness showed the highest value (850Hv) treated at 700$^{\circ}C$ for $SiO_2:Al_2O_3:Cr_2O_3$=1:1:4. Increasing heat-treatment temperature, corrosion current density became lower and coating layer became denser. The corrosion current density showed the lowest value $(6.5{\times}10^{-5}\;Acm^2)$ treated at 750$^{\circ}C\;for\;SiO_2:Al_2O_3:Cr_2O_3$=1:1:3. These results were explained by protective layer which was formed during heat-treatment. The bonding between matrix and coating layer is expected to be made mechanically and chemically by the inter diffusion of Ni and Fe. The composite oxide coating was formed by softening of the binder with increasing heat-treatment temperature. The strengthening of coating layer is to be resulted from the dispersion of major oxide particles.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.315-321
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• 1999

Metal matrix composites have been extensively studied because of their excellent characteristics for structural application. $Al_2O_3$ and SiC have been used as a common reinforcement owing to their good mechanical properties. However the manufacturing cost of these ceramic reinforcement is expensive, so the use of the composites has been restricted to special purposes. In this study, we tested the application possibility as a reinforcement of $Al_2O_3$-TiC powder synthesized by SHS(Self-propagating High-temperature Synthesis) process to Al alloy matrix composite. Also, $Al_2O_3$ short fibers were added with the synthesized powders in order to apply to the Al matrix hybrid composites. Squeeze infiltration casting process was used to make the composite with 25vol% of reinforcement. Microstructure and crystal structure were examined by SEM, OM and XRD, also the mechanical properties were studied by the compressive test and wear test.