• Transactions of Materials Processing
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• v.15 no.8 s.89
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• pp.615-620
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• 2006

The reduction behavior of $TiO_{2}$ in Al and Al/CaSi containing self-reducing $TiO_{2}$ briquettes(SRTB) was investigated. The maximum yield of Ti was expected with the slag composition of 45-55%CaO in the $CaO-Al_{2}O_{3}$ system. When $CaCO_{3}$ was used as a flux, the oxidation loss of reducing agent by $CO_{2}$ should be compensated, and therefore it leads to excessive requirement of the reducing agent. By using Al and CaSi mixture as a reducing agent of $TiO_{2}$, the reaction products both oxide and metal could be liquefied, and separated effectively with each other. As a result, the yield of Ti increases remarkably. The optimum mixing ratio of CaSi to Al is 78%CaSi-22%Al.

• Journal of Power System Engineering
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• v.12 no.3
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• pp.60-65
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• 2008

This study aims at investigating the wear properties of thermally sprayed $Al/Al_2O_3$ metal matrix composite(MMC) coating against different counterparts. $Al/Al_2O_3$ MMC coatings were fabricated using a flame spray system on an Al 6061 substrate. Dry sliding wear tests were performed using the sliding speeds of 0.2m/s and the applied loads of 1 and 2 N. AISI 52100, $Al_2O_3$, $Si_3N_4\;and\;ZrO_2$ balls(diameter: 8mm) were used as counterpart materials. Wear properties of $Al/Al_2O_3$ MMC coatings were analyzed using a scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDX). It was revealed that wear properties of $Al/Al_2O_3$ composite coatings were much influenced by counterpart materials. In the case of AISI 52100 used as counterparts, the wear rate of composites coating layer increased according to the increase of the applied load. On the contrary, in the case of ceramics used as counterparts, the wear rate of composites coating layer decreased according to the increase of the applied load.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.69-72
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• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_3$ $O_{12}$(BLT) 강유전체 박막을 $Al_2$ $O_3$/Si 기판위에 졸-겔(sol-gel)법으로 스핀 코팅하여 Metal-Ferroelectric-Insulator-Silicon (MFIS) 구조를 형성하였다. 박막의 결정화를 위해 as-coated 박막을 산소분위기에서 $650^{\circ}C$ 및 $700^{\circ}C$에서 30분 동안 후속열처리를 실시하였다. BLT 박막의 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 c축으로 우선 배향되는 경향을 보였으며, FWHM 값이 감소하여 결정성이 향상됨을 확인할 수 있었다. $700^{\circ}C$에서 열처리된 BLT 박막의 memory window는 약 2.5V (인가전압 5V)를 나타내었으며, 누설전류는 약 1.5x$10^{-7}$ A/$\textrm{cm}^2$를 나타내었다.다.다.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.297-301
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• 2004

Nano-sized mullite (3Al$_2$O$_3$$.$2SiO$_2$) colloids were prepared by use of the spray combustion method. For combustion reaction, Al(NO$_3$)$_3$$.$9$H_2O$, and CH$_{6}$N$_4$O were used as an oxidizer and a fuel respectively, and then colloidal silica was also added as 2SiO$_2$source for mullite. The temperature of the reaction chamber was kept at 80$0^{\circ}C$ to initiate the ignition of droplets of the mixed precursors. For preventing droplet coagulation, the droplet number concentration was reduced using the metal screen filter, and the residence time of aerosol was kept at 2.5 seconds for laminar flow. The synthesized colloidal particles had an uniform spherical shape with 130 nanometer size and the crystalline phase showed the mullite with stoichiometry in the observations of XRD and TEM.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Applied Chemistry for Engineering
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• v.4 no.1
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• pp.144-152
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• 1993

Immobilized polyethylene glycols onto metal oxides such as ${\gamma}-Al_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$ and $TiO_2$ were used as phase transfer catalysts for the room temperature synthesis of aniline from nitrobenzene and ironpentacarbonyl. The amount of attached PEG molecules increased with specific surface area of metal oxides. Among the immobilized catalysts tested PEG/${\gamma}-Al_2O_3$ showed the highest activity. The reaction rate increased with the chain length of PEG mole-cules and the aqueous NaOH concentration. Mechanistic study carried out using infrared spectrometer revealed that the role of PEG was to increase the formation of $HFe(CO)_4{^-}$ ion, which is known as active species, and its movement from aqueous to organic phase.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.415-422
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• 1986

The metal-support interaction of copper oxide supported on ${\gamma}$-alumina and silica was studied by X-ray diffraction (XRD) and temperature-programmed reduction(TPR). It was found that XRD pattern of CuO can not be observed up to 5.0wt % copper content for CuO/${\gamma}-Al_2O_3$ while CuO/$SiO_2$ sample shows the CuO pattern even at 2.5wt% copper content. $H_2-$TPR of CuO/${\gamma}-Al_2O_3$ system shows four major peaks at 145${\circ}C$, 185${\circ}C$, 210${\circ}C$, and 250${\circ}C$. In the case of CuO/$SiO_2$, a large peak at 250${\circ}C$ was appeared accompanying a small peak at 425${\circ}C$. Comparing the TPR peaks with that of copper aluminate which was prepared from the calcination of CuO/${\gamma}-Al_2O_3$ at 1000${\circ}C$, the peaks at around 145${\circ}C$, 200${\circ}C$ (185${\circ}C$ and 210${\circ}C$), and 250${\circ}C$ were corresponded to $Cu^+$ ion in CuO interacting ${\gamma}-Al_2O_3$, $Cu^+$ ions in defect sites of ${\gamma}-Al_2O_3$ and $Cu^{2+}$ ion in the bulk CuO layer, respectively. From the results, it was concluded that there is considerable metal-support interaction in CuO on ${\gamma}-Al_2O_3$ and the interaction results in a stabilization of $Cu^+$ ion in the system.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1588-1590
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% $TiB_2$ and using 61vol.% SiC 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at 1800$^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), $TiB_2$ and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-$TiB_2$, and SiC(2H), WC and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-WC composites. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was ocurred on the SiC-$TiB_2$, but ${\alpha}{\rightarrow}{\beta}$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the flexural strength showed respectively value of 96.2%, 310.19Mpa in SiC-WC composites. The electrical resistivity of the SiC-$TiB_2$ and the SiC-WC composites is all positive temperature cofficient resistance(PTCR) in the temperature ranges from 25$^{\circ}C$ to 500$^{\circ}C$.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.61-66
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• 2006

The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2O_3$, $Al_2O_3-SiO_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.51-59
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• 2000

Sink roll has been used in molten 55%Al-Zn alloy bath of continuous galvanizing line for sinking and stabilizing working steel strip in molten metal bath. In the process, the sink roll body inevitably build up dross compounds and pitting on the sink roll surface during 55%Al-Zn alloy coated strip production, and the life time of the sink roll is shorten by build up dross compounds and pitting. The present study examined the application of thermally sprayed ceramic coatings method on sink roll body for improving erosion resistance at molten 55% Al-Zn pool. In this experiment, the stainless steels such as STS 316L and STS 430F were used as the substrate materials. The CoNiCr and WE-Co powder were selected as bond coating materials. Moreover $Al_2O_3-ZrO_2-SiO_2 and ZrO_2-SiO_2$ powders selected as the top coating materials. Appearances of the specimens before and after dipping to molten 55%Al-Zn pool were compared and analyzed. As a result of this study, STS430F of substrate, WC-Co of bond spray coatings, $ZrO_2-SiO_2$ power of top spray coatings is the best quality in erosion resistance test at molten 55%Al-Zn pool