• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.405-409
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure consists of a chrom thin-film, patterned on a Wheat stone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1372-1374
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure sensor consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097 $\sim$ 1.21 mV/V kgf/$cm^2$ in the temperature range of 25 $\sim$ $200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.192-196
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• 2002

This paper describes on the fabrication and characteristics of a metal thin-film pressure sensor based on Cr strain-gauges for harsh environment applications. The Cr thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Cr thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21 $mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.460-463
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.142-142
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• 2007

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.13-20
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• 2018

Gas sensors based on metal oxide semiconductors are used in numerous applications including monitoring indoor air quality and detecting harmful substances like volatile organic compounds. Nanostructures, for example, nanoparticles, nanotubes, nanodomes, and nanofibers have been widely utilized to improve gas sensing properties of metal oxide semiconductors, and this increases the effective surface area, resulting in participation of more target gas molecules in the surface reaction. In the recent times, 1-dimensional (1D) metal oxide nanostructures fabricated using anodic oxidation have attracted great attention due to their high surface-to-volume ratio with large-area uniformity, reproducibility, and capability of synthesis under ambient air and pressure, leading to cost-effectiveness. Here, we provide a brief overview of 1D metal oxide nanostructures fabricated by anodic oxidation and their gas sensing properties. In addition, recent progress on thin film-based anodic oxidation for application in gas sensors is introduced.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.85-93
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• 1995

In this study, phthalocyanine thin films were prepared by vacuum sublimation method and investigated sensing characteristics of the films. The phthalocyannies used for the prepaation of the NO$_{x}$ sensors were metal-free Pc(H$_{2}$Pc) and metal Pc(CuPc, CoPc, PbPc). And the substrate temperatures maintained during the fomation of Pc films were varied between R.T. and 200$^{\circ]C$, and the base pressure was 5${\times}10^{6}$ torr. The relationships between NO$_{2}$ sensing properties and SEM analyses as a function of substrate temperatures during the formation of the films were investigated. Among the Pc films, PbPc film showed the best sensing characteristics. Particularlly, the PbPc films prepared at 70$^{\circ]C$ of the substrage temperature showen good sensitivity of 85% to 1ppm NO$_{2}$ gas at operating temperature 190$^{\circ]C$ and response time was about 24 seconds.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.13-18
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• 2006

[ $SnO_2$ ] and ZnO nanostructures were grown on the surface of thin film by heat treatment of metal Sn, Zn under Ar gas flow and $O_2$ at atmospheric pressure, respectively. The sensitivity of the $SnO_2$ thin film device on which grown nanowires to CO gas(5,000 ppm) was 50 % at the operating temperature of $200^{\circ}C$. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced(73 % at $150^{\circ}C$ ). The sensitivity of the ZnO nanorods device using Cu as catalysts to NOx gas was 90 % at the operating temperature of $200^{\circ}C$. It was found that the sensitivity to CO and NOx gases for the device on which grown nanostructures was much higher than those for general thin film device.