• Restorative Dentistry and Endodontics
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• 제12권1호
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• pp.39-49
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• 1986

The purpose of this study was to observe characteristic properties through the polarization curves and SEM images from 4 different types of amalgam obtained by using the potentiostats (Princeton EG & G) & SEM (Jeol/35), and to investigate the degree of corrosion on the oxidation peak of the each phase of amalgam. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of the mechanical amalgamator (Shofu Co.), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10.0mm in height and was condensed by using routine manner. The specimen was removed from the mold and stored at room temperature for about 24 hours. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to confirm the corrosion behaviour of the amalgams in a 0.9% saline solution (P.H: 6.8-7.0) at $37^{\circ}C$. The initial rest potential (corrosion potential) was determined after 30 minutes of immersion of specimen in electrolyte, and the potential scan was begun at the point of 100mV cathodic from the corrosion potential. The scan rate was 0.17mV/sec. in the study to observe the degree of corrosion of each phase. SEI and EPMA images on the determined oxidation peaks of each amalgam were observed. The results were as follows: 1. In the four anodic polarization curves, low copper amalgams have three oxidation peaks and high copper amalgams have two oxidation peaks, -270mV, +26mV and +179mV(SEC) in the low copper lathe cut, and -300mV, +39mV and +163mV(SEC) in the low copper spherical. -4mV and +154mV(SEC) in the Dispersalloy, and +17mV and +180mV(SEC) in the Tytin as high copper amalgams. 2. ${\gamma}_2$ phase in the low copper amalgam and ${\eta}$ phase in the high copper amalgam were the most corrodible phases and Ag-Cu eutectic in high copper amalgam was the most slowly corroded phase. 3. Low copper amalgam was more susceptible in corrosion than high copper amalgam.

• Restorative Dentistry and Endodontics
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• 제13권2호
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• pp.221-235
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• 1988

The purpose of this study was to observe characteristic properties through the polarization curves and EMPA images from 4 different types of amalgam obtained by using the potentiostats (EG & G PARC) & EPMA (Jeol JSM-35), to investigate the degree of corrosion of each phase of amalgam on the oxidation peak, and to identify corrosion products from the corroded amalgam by use of X-ray diffractometer(Rigaku). After each amlgam alloy and Hg were triturated as the direction of the manufacturer by means of the mechanical amalgamator(Shofu), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10mm in height and was condensed by means of routine manner. The specimen was removed from the mold and stored at room temperature for about 7 days. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution(pH6.8~7.0) and artificial saliva (pH6.8~7.0) at $37^{\circ}C$. The open circuit potential was determined after 30 minutes' immersion of specimen in electrolyte and the potential scan was begun at the potential of 100mV cathodic from the corrosion potential. The scan rate was 1mV/sec and the surface area of amalgam exposed to the solution was 0.64$cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). EPMA images on the determined oxidation peaks of each amalgam in artificial saliva were observed. X-ray diffraction patterns of each sample were recorded before and after polarization in artificial saliva (Aristaloy, Caulk Spherical, Dispersalloy and Tytin: at +770mV, +585mV, +8.10m V and +680m V respectively) by use of a recording diffractometer. Nickel filtered Cu $K_{{\alpha}_1}$ radiation was used and sample was scanned at $4^{\circ}(2{\theta})/min.$ from $25^{\circ}$ to $80^{\circ}$. The following results were obtained. 1. Oxidation peak potential in artificial saliva shifted to more anodic direction than that in saline solution. 2. The corrosion potential of high copper amalgam was more anodic than the potential of low copper amalgam. 3. The current density was lower in artificial saliva than in saline solution. 4. One of the corrosion products, AgCl was identified by X-ray diffraction analysis. 5. ${\gamma}_2$ phase was the most susceptible to corrosion and e phase was stable in low copper amalgam and ${\eta}$' phase and Ag-Cu eutectic were susceptible to corrosion in high copper amalgam.

• 한국식품영양과학회지
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• 제36권2호
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• pp.201-208
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• 2007

홍국쌀을 $35^{\circ}C$, 175 rpm에서 80% ethanol을 이용하여 0.5, 1, 2, 4, 8, 24시간 단위로 개별적으로 에탄올 추출한 결과, 1시간(yield, 1.203%) 이후의 추출 시간 증가는 추출율의 증가에 큰 영향을 미치지 않았다. 1시간 추출한 홍국쌀 에탄올 추출물을 각각 600(A), 1200(B), 1800(C), 2280(D) ppm 함유하는 기능성 유지를 제조하였다. 기능성 유지의 색도는 추출물의 함유 농도가 높아짐에 따라 $L^*$ 값이 유의적으로 감소되며, $a^*$ 값 및 $b^*$ 값은 유의적으로 증가되는 경향을 나타내었다(p<0.05). 기능성 유지의 monacolin K 및 총 페놀 함량은 추출물 첨가량의 증가에 따라 유의적으로 증가되는 경향을 보였다(p<0.05). Rancimat$(98^{\circ}C)$ 분석을 실시한 결과, 기능성 유지의 induction time이 각각 control(4.3 hr), A(3.2 hr), B(2.6 hr), C(2.4 hr), D(2.2 hr)로 추출물 첨가 농도의 증가에 따라 다소 감소하는 경향을 나타내어 산화 안정성의 보강이 필요할 것으로 판단된다. 전자코에 의해 얻어진 각 시료의 센서의 감응도$({\Delta}R/R_0)$를 이용한 주성분분석 및 MANOVA 분석 결과, 제1주성분 기여율은 99.66%로 분석되었으며 함유된 추출물의 함량 증가에 따라 각각 차별적인 향 패턴(odor difference)을 보이는 것으로 확인되었다. SPME-GC/MS에 의한 휘발성분 분석 결과, 기능성 유지에서 홍국쌀 에탄올 추출물로부터 기인되는 특유의 휘발성분은 관찰되지 않았으나, RT=12.1 min인 hexanal의 함량이 control에 비하여 유의적인 감소 경향을 나타내는 것이 확인되었다(p<0.05).

• 마이크로전자및패키징학회지
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• 제14권1호
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• pp.33-38
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• 2007

본 실험에서는 Non-Conductive Adhesive (NCA) 와 고분자 범프를 이용한 COG (Chip-on-glass) 접합에 대하여 연구하였다. 산화막이 증착된 Si 기판 위에 고분자 범프를 사진식각 방법으로 형성하고, 고분자 범프 위에 직류 마그네트론 스퍼터링 방법으로 금속 박막층을 증착하였다. 기판으로는 Al을 증착한 유리기판을 사용하였다. 두 종류의 NCA를 사용하여 $80^{\circ}C$에서 하중을 변화시켜가며 접합을 실시하였다. 접합부의 특성을 평가하기 위하여 4단자 저항 측정법을 이용하여 접합부의 접속 저항을 측정하였으며, 주사전자현미경을 이용하여 접합부를 관찰하였다. 신뢰성은 $0^{\circ}C$ 와 $55^{\circ}C$ 사이에서 열충격 실험을 2000회까지 실시하여 평가하였다. 신뢰성 측정 전 접합부의 저항 값은 $70-90m{\Omega}$을 나타내었다. 200MPa 이상의 접합 압력에서는 고분자 범프가 NCA 의 필러 파티클에 의해 손상된 것을 관찰하였다. 신뢰성 측정 후 일부 범프가 fail 되었는데 범프의 fail 원인은 범프의 윗부분보다 상대적으로 금속층이 얇게 증착된 범프의 모서리 부분의 금속층의 끊어졌기 때문이었다.

• 대한화학회지
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• 제14권1호
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• pp.65-74
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• 1970

양이온 교환수지와 시트르산 이온($Cit^{3-}$)이 들어있는 용액에서 방사성 알칼리 토류 금속 이온이 수지와 용액 사이에 어떻게 분배되는가를 실온에서 조사함으로써 그들 금속 이온의 시트르산 착물형성에 관한 연구를 하였다. 용매로서 $H_2O$, 아세톤-$H_2O$ 및 에탄올-$H_2O$를 사용하였다. 용액의 pH는 7.2-7.5로 조절하였고 이온 강도는 0.10-0.12로 유지하였다. 본 연구의 결과 $Ba^{++}$과 $Sr^{++}$은 어떤 용매계에서도 1:1착물(M $Cit^-$)을 형성하는 것을 알았다. 그리고 $Ca^{++}$은 수용액에서는 1:1착물을 형성하지만 혼합 용매계에서는 1:1착물(Ca $Cit^-$)과 1:2착물(Ca $Cit_2^{4-}$)을 형성함을 알았다. 그리고 이들 착물의 안정도는 $Ba^{++}\;<\;Sr^{++}\;<\;Ca^{++}$ 의 순으로 커지며 또 혼합용매의 유기 성분의 농도 증가순으로 커짐을 알았다.

• 한국식품영양과학회지
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• 제16권3호
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• pp.85-90
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• 1987

고추가루로부터 acetone을 추출용매(抽出溶媒)로 하여 oleoresin을 제조한 후 capsanthin과 capsaicin의 안정성(安定性)을 검토(檢討)하고, oleoresin-linoleate aqueous model system을 이용하여 ascorbic acid, 금속(金屬), 염류(鹽類), EDTA 등을 첨가하여 capsanthin의 변화(變化)를 측정(測定)한 결과는 다음과 같다. 1. 추출용매(抽出溶媒)로는 acetone이 가장 효과적이었으며, 고추가루로부터 oleoresin의 수율은 14.2%이었다. 2. Capsaicin은 capsanthin에 비하여 고온에서 상당히 안정하였으며 $pH\;3{\sim}8$에서 oleoresin중의 capsanthin과 capsaicin도 비교적(比較的) 안정하였다. 3. Ascorbic acid를 $10^{-3}M$ 첨가시 capsanthin의 산화반응에 prooxidant로서 작용하였으나 $10^{-1}M$ 첨가시에는 antioxidant로서 작용하였다. 4. $Cu^{+2}M$, $Fe^{+3}M$ 이온은 capsanthin의 산화반응(酸化反應)을 촉진시켰으며 농도(濃度)가 높을수록 영향이 컸다. 5. EDTA는 capsanthin에 대하여 항산화(抗酸化) 효과(效果)를 나타내었다.

• 한국식품영양과학회지
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• 제37권3호
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• pp.373-378
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• 2008

광양만의 해안 뻘에서 protease 저해력이 우수한 균주 S. thermocarboxydus C12를 분리하여 최적의 저해제 생산 조건을 조사하였다. 최대 저해활성을 보이는 온도와 초기 pH는 각각 $40^{\circ}C$와 8.0이었다. 저해제 생산에 미치는 탄소원의 영향을 검토한 결과, 단당류인 galactose, glucose, fructose와 다당류인 starch에서 높은 저해활성을 보였으며, 최적의 탄소원과 농도는 각각 galactose와 1.6%(w/v)였다. 질소원의 경우 복합배지인 polypeptone과 proteose peptone에서 가장 높은 저해활성이 나타났으며, 최적의 농도와 질소원은 0.5%(w/v)와 proteose peptone이었다. 최적의 NaCl 농도와 금속이온은 각각 1%(w/v)와 1 mM LiCl이었다. 선정된 최적배양조건에서 균주를 배양한 결과, 84시간 동안 배양 시 저해활성이 최대인 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.