• Restorative Dentistry and Endodontics
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• v.12 no.1
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• pp.39-49
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• 1986

The purpose of this study was to observe characteristic properties through the polarization curves and SEM images from 4 different types of amalgam obtained by using the potentiostats (Princeton EG & G) & SEM (Jeol/35), and to investigate the degree of corrosion on the oxidation peak of the each phase of amalgam. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of the mechanical amalgamator (Shofu Co.), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10.0mm in height and was condensed by using routine manner. The specimen was removed from the mold and stored at room temperature for about 24 hours. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to confirm the corrosion behaviour of the amalgams in a 0.9% saline solution (P.H: 6.8-7.0) at $37^{\circ}C$. The initial rest potential (corrosion potential) was determined after 30 minutes of immersion of specimen in electrolyte, and the potential scan was begun at the point of 100mV cathodic from the corrosion potential. The scan rate was 0.17mV/sec. in the study to observe the degree of corrosion of each phase. SEI and EPMA images on the determined oxidation peaks of each amalgam were observed. The results were as follows: 1. In the four anodic polarization curves, low copper amalgams have three oxidation peaks and high copper amalgams have two oxidation peaks, -270mV, +26mV and +179mV(SEC) in the low copper lathe cut, and -300mV, +39mV and +163mV(SEC) in the low copper spherical. -4mV and +154mV(SEC) in the Dispersalloy, and +17mV and +180mV(SEC) in the Tytin as high copper amalgams. 2. ${\gamma}_2$ phase in the low copper amalgam and ${\eta}$ phase in the high copper amalgam were the most corrodible phases and Ag-Cu eutectic in high copper amalgam was the most slowly corroded phase. 3. Low copper amalgam was more susceptible in corrosion than high copper amalgam.

• Restorative Dentistry and Endodontics
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• v.13 no.2
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• pp.221-235
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• 1988

The purpose of this study was to observe characteristic properties through the polarization curves and EMPA images from 4 different types of amalgam obtained by using the potentiostats (EG & G PARC) & EPMA (Jeol JSM-35), to investigate the degree of corrosion of each phase of amalgam on the oxidation peak, and to identify corrosion products from the corroded amalgam by use of X-ray diffractometer(Rigaku). After each amlgam alloy and Hg were triturated as the direction of the manufacturer by means of the mechanical amalgamator(Shofu), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10mm in height and was condensed by means of routine manner. The specimen was removed from the mold and stored at room temperature for about 7 days. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution(pH6.8~7.0) and artificial saliva (pH6.8~7.0) at $37^{\circ}C$. The open circuit potential was determined after 30 minutes' immersion of specimen in electrolyte and the potential scan was begun at the potential of 100mV cathodic from the corrosion potential. The scan rate was 1mV/sec and the surface area of amalgam exposed to the solution was 0.64$cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). EPMA images on the determined oxidation peaks of each amalgam in artificial saliva were observed. X-ray diffraction patterns of each sample were recorded before and after polarization in artificial saliva (Aristaloy, Caulk Spherical, Dispersalloy and Tytin: at +770mV, +585mV, +8.10m V and +680m V respectively) by use of a recording diffractometer. Nickel filtered Cu $K_{{\alpha}_1}$ radiation was used and sample was scanned at $4^{\circ}(2{\theta})/min.$ from $25^{\circ}$ to $80^{\circ}$. The following results were obtained. 1. Oxidation peak potential in artificial saliva shifted to more anodic direction than that in saline solution. 2. The corrosion potential of high copper amalgam was more anodic than the potential of low copper amalgam. 3. The current density was lower in artificial saliva than in saline solution. 4. One of the corrosion products, AgCl was identified by X-ray diffraction analysis. 5. ${\gamma}_2$ phase was the most susceptible to corrosion and e phase was stable in low copper amalgam and ${\eta}$' phase and Ag-Cu eutectic were susceptible to corrosion in high copper amalgam.

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.2
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• pp.201-208
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• 2007

Functional oils (FOs) were produced from commercial diacylglycerol oil and red yeast rice extracts from 80% ethanol for 1 hr in a shaking water bath at $35^{\circ}C$ and 175 rpm. FOs contained (A) 600, (B) 1200, (C) 1800, and (D) 2280 ppm of red yeast-rice extracts, respectively. The Hunter a value and b value were risen whereas L value was reduced along with the increase of extract concentration. Content of monacolin K and total phenolic compounds in FOs significantly increased according to the increase of extract concentration. The oxidation stability of FOs was observed by Rancimat at $98^{\circ}C$. Induction time decreased according to the increase of extract concentration. The major volatile compounds of FOs were compared using the electronic nose (EN) system and solid phase microextraction (SPME) method combined with gas chromatograph/mass spectrometry (GC/MS). EN was composed of 12 different metal oxide sensors. Sensitivities (Rgas/Rair) of sensors from EN were analyzed by principal component analysis (PCA), whose proportion was 99.66%. For qualitative or quantitative analysis of volatile compounds by SPME-GC/MS, the divinylbenzene/carboxene/polydimethyl-siloxane fiber and sampling temperature of $50^{\circ}C$ were applied.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.33-38
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• 2007

We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at $80^{\circ}C$ under various pressure. Two NCAs were applied during joining. Thermal cycling test ($0^{\circ}C-55^{\circ}C$, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was $70-90m{\Omega}$ before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.

• Journal of the Korean Chemical Society
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• v.14 no.1
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• pp.65-74
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• 1970

Formation of the complexes of alkaline earths with citrate ions in aqueous, acetone-water and ethanol-water solutions was studied at room temperature by the equilibrium exchange technique. This technique involved the measurements of distribution of radioactivity between cation exchange resin and solution phase after the radioactive metal ions were equilibriated with the cation exchange resin in the presence of citrate ions ($Cit^{3-}$) of varying concentrations. The pH of the solutions was controlled to 7.2-7.5, and the ionic strength of the solutions was kept at 0.10-0.12. The present study revealed that both barium and strontium ions formed the one to one citrate complexes, $[M Cit]^-$ in all solvent systems examined. It was also observed that calcium ions formed the one to one citrate complex in aqueous solution. In acetone-water and ethanol-water solutions, however, calcium ions were observed to form both one to one and one to two complexes, $[Ca Cit]^-$ and $[Ca\;Cit_2]^{4-}$. The results of the present study indicated also that relative stabilities of the complexes increased in the order; $Ba^{++}\;<\;Sr^{++}\;<\;Ca^{++}$, and in the order of increasing concentration of the organic components in the mixed solvent systems.

• Journal of the Korean Society of Food Science and Nutrition
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• v.16 no.3
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• pp.85-90
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• 1987

This experiment was carried out to study the preparations of red pepper oleoresin, the effects of pH and heat treatment on the stabilities of capsanthin and capsaicin in oleoresin state, and the interacting effects of ascorbic acid, metal salts and EDTA on the stabilities of capsanthin in the oleoresin-linoleate aqueous model system. The results were as follows: 1. Acetone was the most effective solvent to extract capsanthin and capsaicin from red pepper powder. The yield of oleoresin extracted with acetone was 14.27%. 2. Capsaicin was more stable at high temperature than capsanthin in oleoresin state. Capsanthin and capsaicin in oleoresin state were comparatively stable in the range (ron) pH 3 to pH 8. 3. Ascorbic acid acted as a prooxidant on the capsanthin oxidation reaction at concentrations up to $10^{-3}M$, but acted as an antioxidant at $10^{-1}M$. 4. The addition of $Cu^{+2}M$ and $Fe^{+3}M$ ions at all concentration increased the prooxidant activity on the degradation of capsanthin in oleoresin state. 5. EDTA showed a strong antioxidation the stability of capsanthin in oleoresin state.

• Journal of the Korean Society of Food Science and Nutrition
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• v.37 no.3
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• pp.373-378
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• 2008

The objective of this paper was to investigate optimal culture conditions for the production of an inhibitor against subtilisin-like protease from Streptomyces thermocarboxydus (S. thermocarboxydus) C12 isolated from sediments of Gwangyang coast. The optimal temperature and initial pH for the production of subtilisin-like protease inhibitor were $40^{\circ}C$ and pH 8.0, respectively. Inhibition activities were high for galactose, glucose and fructose. The best carbon source and its concentration were galactose and 1.6% (w/v), respectively. Inhibition activities were also high in medium containing polypeptone, proteose and peptone. Optimal nitrogen source and concentration were protease peptone and 0.5% (w/v), respectively. Optimal concentrations for inhibitor production were 1% (w/v) for NaCl and 1 mM LiCl for metal salts. The subtilisin-like protease inhibitor from S. thermocarboxydus C12 showed a maximum inhibitor activity after cultivation for 84 h under the optimized medium.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.