• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.572-578
• /
• 2014

In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

• Nuclear Engineering and Technology
• /
• v.42 no.6
• /
• pp.656-661
• /
• 2010

Lead-alloys are very attractive nuclear coolants due to their thermo-hydraulic, chemical, and neutronic properties. By utilizing the HELIOS (Heavy Eutectic liquid metal Loop for Integral test of Operability and Safety of PEACER$^2$) facility, a thermal hydraulic benchmarking study has been conducted for the prediction of pressure loss in lead-alloy cooled advanced nuclear energy systems (LACANES). The loop has several complex components that cannot be readily characterized with available pressure loss correlations. Among these components is the core, composed of a vessel, a barrel, heaters separated by complex spacers, and the plenum. Due to the complex shape of the core, its pressure loss is comparable to that of the rest of the loop. Detailed CFD simulations employing different CFD codes are used to determine the pressure loss, and it is found that the spacers contribute to nearly 90 percent of the total pressure loss. In the system codes, spacers are usually accounted for; however, due to the lack of correlations for the exact spacer geometry, the accuracy of models relies strongly on assumptions used for modeling spacers. CFD can be used to determine an appropriate correlation. However, application of CFD also requires careful choice of turbulence models and numerical meshes, which are selected based on extensive experience with liquid metal flow simulations for the KALLA lab. In this paper consistent results of CFX and Star-CD are obtained and compared to measured data. Measured data of the pressure loss of the core are obtained with a differential pressure transducer located between the core inlet and outlet at a flow rate of 13.57kg/s.

• Nuclear Engineering and Technology
• /
• v.54 no.7
• /
• pp.2728-2735
• /
• 2022

The research on the flow and heat transfer characteristics of lead bismuth(LBE) is significant for the thermal-hydraulic calculation, safety analysis and practical application of lead-based fast reactors(LFR). In this paper, a new CFD model is proposed to solve the thermal-hydraulic analysis of LBE. The model includes two parts: turbulent model and turbulent Prandtl, which are the important factors for LBE. In order to find the best model, the experiment data and design of 19-pin hexagonal rod bundle with spacer grid, undertaken at the Karlsruhe Liquid Metal Laboratory (KALLA) are used for CFD calculation. Furthermore, the turbulent model includes SST k - 𝜔 and k - 𝜀; the turbulent Prandtl includes Cheng-Tak and constant (Pr_t =1.5,2.0,2.5,3.0). Among them, the combination between SST k - 𝜔 and Cheng-Tak is more suitable for the experiment. But in the low Pe region, the deviation between the experiment data and CFD result is too much. The reason may be the inlet-effect and when Pe is in a low level, the number of molecular thermal diffusion occupies an absolute advantage, and the buoyancy will enhance. In order to test and verify versatility of the model, the NCCL performed by the Nuclear Thermal-hydraulic Laboratory (Nuthel) of Xi'an Jiao tong University is used for CFD to calculate. This paper provides two verification examples for the new universal model.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.2
• /
• pp.113-119
• /
• 2006

Brazing is an important manufacturing process in the fabrication of Heavy Water Reactor fuel rods, in which bearing and spacer pads are joined to Zircaloy-4 cladding tubes. The physical vapor deposition(PVD) technique is currently used to deposit metallic Be on the surfaces of pads as a filler metal. Amorphous Zr-Be binary alloys which are manufactured by rapid solidification process are under developing to substitute the conventional PVD-Be coating. In the present study, brazed joint with PVD and amorphous alloys of $Zr_{1-x}Be_{x}(0.3{\le}x{\le}0.5)$ as filler metals are compared by mechanism, microstructure and hardness. The thickness of brazed joint with amorphous alloys became much smaller than that of PVD-Be. The erosion of base metal did not occur in the brazed joint with amorphous alloys. The brazing mechanism for PVD-Be seems to be Be diffusion into Zr-4 with capillary action resulting from eutectic reaction while that for amorphous alloys are associated with the liquid phase formation in the brazed joint. The brazed joint microstructure with PVD-Be consists of dendrite while that with amorphous alloys is globular. The $Zr_{0.7}Be_{0.3}$ alloy shows the smooth interface with little erosion in the base metal and is recommended a most suitable brazing filler metal for Zircaloy-4.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.105-106
• /
• 2013

Surface plasmon resonance (SPR) is classified into the propagating surface plasmon (PSP) excited on flat metal surfaces and the local surface plasmon (LSP) excited by metalnanoparticles. It is known that fluorescence signals are enhanced by these two SPR-fields.On the other hand, fluorescence is quenched by the energy transfer to metal (FRET). Bothphenomena are controlled by the distance between dyes and metals, and the degree offluorescence enhancement is determined by the correlation. In this study, we determined thecondition to achieve the maximum fluorescence enhancement by adjusting the distance of ametal nanoparticle 2D sheet and a quantum dots 2D sheet by the use of $SiO_2$ spacer layers. The 2D sheets consisting of myristate-capped Ag nanoparticles (AgMy nanosheets) wereprepared at the air-water interface and transferred onto hydrophobized gold thin films basedon the Langmuir-Schaefer (LS) method [1]. The $SiO_2$ sputtered films with different thickness (0~100 nm) were deposited on the AgMy nanosheet as an insulator. TOPO-cappedCdSe/CdZnS/ZnS quantum dots (QDs, ${\lambda}Ex=638nm$) [2] were also transferred onto the $SiO_2$ films by the LS method. The layered structure is schematically shown in Fig. 1. The result of fluorescence measurement is shown in Fig. 2. Without the $SiO_2$ layer, the fluorescence intensity of the layered QD film was lower than that of the original QDs layer, i.e., the quenching by FRET was predominant. When the $SiO_2$ thickness was increased, the fluorescence intensity of the layered QD film was higher than that of the original QDs layer, i.e., the SPR enhancement was predominant. The fluorescence intensity was maximal at the $SiO_2$ thickness of 20 nm, particularly when the LSPR absorption wavelength (${\lambda}=480nm$) was utilized for the excitation. This plasmonic nanosheet can be integrated intogreen or bio-devices as the creation point ofenhanced LSPR field.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.31-32
• /
• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.173-173
• /
• 2000

Multilayered films (MLF) consisting of transition metals and semiconductors have drawn a great deal of interest because of their unique properties and potential technological applications. Fe/Si MLF are a particular topic of research due to their interesting antiferromagnetic coupling behavior. although a number of experimental works have been done to understand the mechanism of the interlayer coupling in this system, the results are controversial and it is not yet well understood how the formation of an iron silicide in the spacer layers affects the coupling. The interpretation of the coupling data had been hampered by the lack of knowledge about the intermixed iron silicide layer which has been variously hypothesized to be a metallic compound in the B2 structure or a semiconductor in the more complex B20 structure. It is well known that both magneto-optical (MO0 and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In order to understand the structure and physical properties of the interfacial regions, Fe/Si multilayers with very thin sublayers were investigated by the MO and optical spectroscopies. The Fe/si MLF were prepared by rf-sputtering onto glass substrates at room temperature with a totall thickness of about 100nm. The thicknesses of Fe and Si sublayers were varied from 0.3 to 0.8 nm. In order to understand the fully intermixed state, the MLF were also annealed at various temperatures. The structure and magnetic properties of Fe/Si MLF were investigated by x-ray diffraction and vibrating sample magnertometer, respectively. The MO and optical properties were measured at toom temperature in the 1.0-4.7 eV energy range. The results were analyzed in connection with the MO and optical properties of bulk and thin-film silicides with various structures and stoichiometries.

• Journal of IKEEE
• /
• v.16 no.3
• /
• pp.173-176
• /
• 2012

This paper introduces a novel horn antenna for circular polarization using a planar-type radiator. This antenna can be divided to two parts, microstrip antenna and square horn. The microstrip antenna has the role of feeder and polarizer of the horn antenna, and it is designed to stacked type having metal spacer for high gain, high isolation and wideband characteristic. Using the proposed antenna structure, the horn antenna needs not additional structure such as feeder and polarizer, and the size of it can be considerably reduced. The horn antenna has typical gain of 8dBi and 3-dB axial-ratio bandwidth around 4.9%.This antenna can widely used for various antenna system for mobile and satellite communication using circular polarization expecially in high frequency band.

• Structural Engineering and Mechanics
• /
• v.10 no.3
• /
• pp.245-262
• /
• 2000

The objective of this study is to analyze the deformational characteristics of a high-vacuum insulation panel that is evacuated to eliminate significant gas-phase conductance through its thickness. The panel is composed of a metal envelope and low thermal conductance spacers. The problem is very challenging because several nonlinearities are involved concurrently. Not only are various finite element models such as triangular, rectangular, beam and circular plate models used to simulate the panel, but also several finite element programs are used to solve the problem based on the characteristics of the finite element model. The numerical results indicate that the effect of the diameter of the spacer on the vertical deformation of the plate panel is negligibly small. The parameter that mainly influences the maximum sag is the spacing between the spacers. The maximum vertical deformation of the panel can be predicted for a practical range of the spacing between the spacers and the thickness of the plate. Compared with the numerical results obtained by the finite element models and the experimental tests, they have a good agreement. The results are represented in both tabular and graphical forms. In order to make the results useful, a curve fitting technique has been applied to predict the maximum deformation of the panel with various parameters. Moreover, the panel was suggested to be a "smart" structure based on thermal effect.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1788-1790
• /
• 2003

GIS is a typical power equipment with higher reliability. It is compact and safe because all the energized parts are enclosed by a sealed cylindrical tank which is filled with $SF_6$. Generally gas insulated power equipments like GIS are designed to have sufficient electrical strength to prevent partial discharges under normal operating condition. Despite of the careful processes in manufacturing, transporting and assembling, voids or particles can be created, resulting in partial discharges at electrically weak points. The key factors causing partial discharges in GIS are; particles, voids in solid insulation, protrusions, poor contact of metal components, etc. The particle can be attached on; spacers, electrodes, internal wall of the GIS tank. It also moves in GIS freely. Most of partial discharges are likely to occur when particles are attached to spacers. In this paper, the electrical characteristics of a surface discharge were investigated under various conditions by using simulation program of FEMLAB.