• Title/Summary/Keyword: Metal precursor

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Isolation of an Acinetobacter junii SY-01 Strain Producing an Extracellular Lipase Enantioselectively Hydrolyzing Itraconazole Precursor, and Some Properties of the Lipase

  • Yoon, Moon-Young;Shin, Pyong-Kyun;Han, Ye-Sun;Lee, So-Ha;Park, Jung-Keug;Cheong, Chan-Seong
    • Journal of Microbiology and Biotechnology
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    • v.14 no.1
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    • pp.97-104
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    • 2004
  • Water-sludge bacteria were screened to find a lipase enantioselectively hydrolyzing itraconazole precursor, which is well known as the starting material of antifungal drug agents. A bacterial strain was isolated and identified as Acinetobacter junii SY-01. After the strain was cultivated, the enzyme was purified 39.4-fold using ultrafiltration and gel filtration through a Sephadex G-100 chromatographic column and the activity yield was 34.9%. The molecular weight of the enzyme was about 40 kDa, as measured by SDS-PAGE, and the optimum pH was 7.0- 9.0 and stable at pH 6.0- 9.0. The optimum temperature was 45- $5^{\circ}C$, and 73% of the enzymes activity remained after incubation at 70% for 1 h. Enzyme activity was enhanced by gall powder, sodium deoxycholate, a cationic detergent Tween 80, and a non-ionic detergent Triton X-100, but was markedly inhibited by metal ions such as $Hg^{2+},Cu^{2+},Ni^{2+}/,Ca^{2+}$, and an anionic-surfactant sodium dodecylsulfate. The $K_{m}$ values for (R)- and (S)-enantiomers of the itraconazole precursor were 0.385 and 21.83 mM, respectively, and the $V_{max} values ($\mu$Mㆍmin^{-1}.)$ were 6.73 and 6.49, respectively. The acetyl group among the different acyl moieties of itraconazole precursor showed the highest enantioselectivity for the hydrolysis by the Acinetobacter junii SY-01 lipase, and the lipase from Acinetobacter junii SY-01 displayed better enantioselectivity than that of commercially available lipases and esterases.

Influence analysis of heat treatment on crystalline structure of ZrO2-SiO2 glass precursor synthesized by sol-gel method (졸-겔법으로 합성된 ZrO2-SiO2 유리전구체의 결정화구조에 미치는 열처리의 영향분석)

  • Chun, Kyung-Soo
    • Analytical Science and Technology
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    • v.25 no.1
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    • pp.3-6
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    • 2012
  • $xZrO_2-(1-x)SiO_2$ glass precursor with relatively high concentration of zirconium propoxide in metal alkoxide solution was obtained by sol-gel method and then heated at various temperature from 500 to $1,100^{\circ}C$ to investigate the effect of the thermal treatment on the crystalline structure of the glass precursor. Based on X-ray diffraction analysis, the crystalline peak was started to develop at temperature higher than $600^{\circ}C$, and the crystalline phase was considerably increased at $850^{\circ}C$ or higher. With increasing the thermal treatment temperature, the characteristic peaks, such as baddelyite, tetragonal-$ZrO_2$ and zircon, was shown at $35^{\circ}$, $50^{\circ}$ and $60^{\circ}$ of $2{\theta}$.

Thermal and Rheological Characterizations of Polycarbosilane Precursor by Solvent Treatment (폴리카보실란 전구체의 용매 처리에 따른 열적 및 유변학적 특성 분석)

  • Song, Yeeun;Joo, Young Jun;Shin, Dong Geun;Cho, Kwang Youn;Lee, Doojin
    • Composites Research
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    • v.35 no.1
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    • pp.23-30
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    • 2022
  • Polycarbosilane(PCS) is an important precursor for melt-spinning the silicon carbide(SiC) fibers and manufacturing ceramics. The PCS is a metal-organic polymer precursor capable of producing continuous SiC fibers having excellent performance such as high-temperature resistance and oxidation resistance. The SiC fibers are manufactured through melt-spinning, stabilization, and heat treatment processes using the PCS manufactured by synthesis, purification, and control of the molecular structure. In this paper, we analyzed the effect of purification of unreacted substances and low molecular weight through solvent treatment of PCS and the effect of heat treatment at various temperatures change the polymerization and network rearrangement of PCS. Especially, we investigated the complex viscosity and structural arrangement of PCS precursors according to solvent treatment and heat treatment through the rheological properties.

Study on the feasibility of metallic saggar for synthesizing NCM cathode active materials-I (NCM 계 양극활물질 합성용 금속질 내화갑 가능성 연구-I)

  • Yong Il Park;Ji Hun Jung;Sung Hyun Woo;Jung Heon Lee;Hyeong-Jun Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.3
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    • pp.103-107
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    • 2024
  • In this study, nickel, a pure metal material, was proposed as a saggar for synthesizing NCM [Li(NixCoyMnz)O2] cathode active material. Nickel is known as a metal that is resistant to oxidation and has a high melting point. Nickel is one of the main components of NCM cathode material and was expected to be free from problems with contamination from saggar during cathode material synthesis. We sought to confirm the possibility of nickel as a saggar for synthesizing NCM cathode active materials. When a Ni metal crucible and Ni0.8Co0.1Mn0.1(OH)2 (NCM 811) precursor material were reacted at 900℃ for a long time, the change in the reaction layer on the surface of the crucible over time was analyzed. The nickel crucible reaction layer formed during heat treatment at 900℃ was nickel oxide, and is thought to have been created by simultaneous oxygen diffusion from the cathode precursor oxide and reaction with oxygen in the atmosphere. The change in thickness of the oxide layer appears to slow down after 480 hours, which suggests that the rate of oxygen diffusion from the precursor is reduced. It remained combined without falling out of the crucible until 480 hours. However, it was confirmed that the oxide layer falls off after 720 hours, so it is thought that it can be used as saggar for NCM synthesis only for a certain period of time.

Ru and $RuO_2$ Thin Films Grown by Atomic Layer Deposition

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Jung, Hyun-June;Yoon, Soon-Gil;Kim, Soo-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.149-149
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    • 2008
  • Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

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Surface Chemical Reactions for Metal Organic Semiconductor Films by Alternative Atomic Layer Deposition and Thermal Evaporation

  • Kim, Seong Jun;Min, Pok Ki;Lim, Jong Sun;Kong, Ki-Jeong;An, Ki-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.166.2-166.2
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    • 2014
  • In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

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In situ growth of Mg-Al hydrotalcite film on AZ31 Mg alloy

  • Song, Yingwei;Chen, Jun;Shan, Dayong;Han, En-Hou
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.12-13
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    • 2012
  • An environmentally friendly method for in situ growth of Mg-Al hydrotalcite (HT) film on AZ31 magnesium alloy has been developed. The growth processes and corrosion resistance of the HT film were investigated. Then the HT film was surface modified by phytic acid solution to further improve the corrosion resistance. The film formation involves the dissolution of AZ31 substrate, adsorption of the ions from solution, nucleation of the precursor, followed by the dissolution of $Al^{3+}$, exchanging of $OH^-$ by $CO{_3}^{2-}$ and growth of the HT film. The HT film is very compact and acts as a barrier against $Cl^-$ attack in the early stage of corrosion, and then the surface of the film is dissolved gradually. This dense HT film can provide effective protection to the AZ31 alloy. The HT film with surface modification by phytic acid presents a self-healing feature and exhibits better corrosion resistance.

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Catalytic Combustion of Ozone Precursor Using Metal -Phthalocyanine Catalyst (금속-프탈로시아닌을 이용한 오존전구물질의 촉매연소)

  • 서성규;윤형선;김상채
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 1999.10a
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    • pp.449-450
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    • 1999
  • VOCs(volatile organic compounds)는 대기중에서 질소산화물과 함께 광화학반응에 참여하여 인체 및 동식물에 유해한 오존 등 2차 오염물질인 광화학산화물을 형성하는 전구물질로 작용한다. 1998년 8월 미국 EPA에서는 휘발성유기화합물과 지표 부근의 오존 또는 스모그의 발생량을 감소시키기 위해 페인트, 세제 및 살충제의 제조공법에 관한 새로운 규칙을 발표하여 휘발성 용제 사용 규제를 강호하고 있다(과학기술부, 1998).(중략)

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