• 헤리티지:역사와 과학
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• 제53권2호
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• pp.242-253
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• 2020

나주 복암리 정촌 고분 1호 석실에서 화살통 장식 6점이 출토되었다. 유기물로 만들어진 화살통은 매장 상태에서 부식되어 없어지고 금속으로 만들어진 화살통 장식물만 남게 된다. 정촌 고분 화살통 장식은 형태적으로 2점씩 쌍을 이루며, 출토 위치에 따라 화살통 2점을 장식한 것으로 추정된다. 화살통 장식은 화살의 방입부(方立部)를 꾸며주는 대륜상금구와 방입부와 허리띠를 연결하는 배판(背板)을 장식하는 판상금구로 나누어진다. 1호 석실 목관2에서 출토된 화살통 장식은 대륜상금구만 확인되었으며 1호 석실 동남쪽에서 확인된 화살통 장식은 허리띠에 사용된 추정 대구, 판상금구, 대륜상금구가 확인되었다. 화살통 장식의 분석 결과, 철제 판에 금동 판을 접합한 철지금동장식제(鐵地金銅裝飾製)이며 표면을 정(釘)으로 점을 찍어 선과 문양을 만든 것을 알 수 있다. 성분 분석 결과(XRF), 금동 표면은 24~40wt% Au, 50~93wt% Cu가 검출되어 금도금 표면에 청동 부식물이 형성되었음을 확인하였다. 금도금 층의 SEM-EDS 분석 결과 광택을 내기 위한 작업선이 확인되었다. 또한 7~9wt% Hg가 검출되고 도금 층에 아말감 덩어리가 확인되어 아말감 도금한 것을 알 수 있었다. CT와 FT-IR 분석 결과 대륜상금구는 철제 판 아래 견직물이 2중으로 겹쳐 있으며 그 아래 옻칠편도 붙어 있었다. 이는 대륜상금구를 방입부에 부착할 때 직물을 덧대어 밀착력과 장식성을 높였으며, 옻칠 된 방입부 표면이 함께 떨어진 것으로 추정된다. 반면, 판상금구는 철제 판 아래 유기물이 두껍게 붙어 있다. 재질을 확정하기 어려우나 배판의 잔재로 보인다. 이러한 나주 정촌 고분 출토 화살통 장식의 특징은 4세기 후반~5세기 후반의 백제, 신라, 가야 문화권과 유사한 형식을 보여주며 당시 수준 높은 고대 금속 공예 제작 기술을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 공업화학
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• 제8권4호
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• pp.568-574
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• 1997

Ni/MH전지에서 Cu 도금이 MH(metal hydride)음극의 전극 특성에 미치는 영향을 실험적으로 조사하였다. $LaNi_5$와 Cu도금된 $LaNi_5$를 활물질로 사용하여 냉간압착법과 페이스트법의 혼용법으로 전극을 제조하였다. 그 결과 소량의 CMC(carboxymethylcellulose sodium salt)를 첨가하고 열처리를 행하지 않은 전극이 높은 방전용량을 보였다. $LaNi_5$보다는 Cu 도금된 $LaNi_5$를 활물질로 사용하여 제조한 전극의 방전용량이 증가하였으며, 이는 $LaNi_5$표면에 도금된 구리에 의해 전극의 전자 전도도가 증가되었기 때문이며 도금된 구리의 양이 증가할 수록 그 효과는 현저하였다. 또한 전극의 방전용량은 산성 무전해도금의 경우가 알칼리성 무전해도금을 행한 전극보다 우수한 용량을 나타내었다. Al이 첨가된 $LaNi_{4.5}Al_{0.5}$ 전극이 $LaNi_5$전극보다 우수한 방전용량을 보였다. 구리 도금이 $LaNi_5$의 피독특성에 미치는 영향을 CO기체의 피독실험으로 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• 대한치과교정학회지
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• 제25권1호
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• pp.43-54
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• 1995

TiN 피막 처리된 스테인레스강 교정용 장치물이, 전해질이 있는 구강내에 장기간 장착될 때 발생할 수 있는 금속 유리 정도를 파악하기 위해 상악 편측에 해당하는 모조 교정 장치를 제작하였다. welding을 실시하고 TiN 피막 처리한 시편을 제1군으로, welding을 실시하지 않고 TiN피 막 처리한 시편을 제2군으로, welding을 실시하고 TiN 피막 처리를 하지 않은 시편을 제3군으로 welding과 TiN 피막 처리를 실시하지 않은 시편을 제4군으로 하여 각 군당 10개씩의 시편을 준비하였다. 각 시편을 인공 타액내에 15일간 침적하여 용액 속에 유리되어 용해된 니켈과 크롬의 누계와 침전물 형태로 존재하는 니켈과 크롬의 양을 측정하여 총량의 차이를 TiN 피막 처리 유무와 welding 유무에 따라 t-test로 검정한 결과, welding을 실시한 두 군중 TiN 피막 처리 한 군에서 금속 유리량이 더 적었으며 , TiN 피막 처리한 두 군중 welding을 실시하지 않은 군에서 금속 유리량이 더 적은 것으로 나타났다. 표면 조직 관찰시 welding을 실시한 두 군에서 수많은 침전물과 Pitting corrosion이 보였으며 이 중 TiN 피막 처리한 군에서 그 정도가 낮았다. 본 실험을 통하여 스테인레스강 교정용 장치물에 TiN 피막 처리시 심미성 및 각종 물성의 개선 이외에도 금속 유리의 정량적인 분석 결과 내식성이 현저히 개선됨을 알 수 있었다.

• 전기화학회지
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• 제4권4호
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• pp.160-165
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• 2001

황산원자를 포함하는 mercapto화합물은 도금시 전착속도를 증가시키는 첨가제로 알려져 있는데, 이 중 4가지의 mercapto 화합물을 선정하여 농도를 변화시켜가며 Hull cell test, Haring-Blum cell test, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance)등을 이용하여 도금특성 및 throwing power를 알아보았다. Cathode polarization 및 EQCM을 통한 구리 전착량을 알아본 결과 4가지의 mercapto 화합물 중 3-mercapto-1-propanesulfonic acid가 activator로서 가장 적당하였으며, 그 농도가 20 ppm에서 throwing power를 증가시키고, 농도 및 활성 과전압이 오직 $Cl^-$만 포함되었을 때보다 cathodic scan시 100 mV 만큼 shift되어 증착속도를 증가시킴을 알 수 있었다.

• 한국재료학회지
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• 제21권5호
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• pp.288-294
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• 2011

Simultaneous Ni and C codeposition by electrolysis was investigated with the aim of obtaining better corrosion resistivity and surface conductivity of a metallic bipolar plate for application in fuel cells and redox flow batteries. The carbon content in the Ni-C composite plate fell in a range of 9.2~26.2 at.% as the amount of carbon in the Ni Watt bath and the roughness of the composite were increased. The Ni-C composite with more than 21.6 at.% C content did not show uniformly dispersed carbon. It also displayed micro-sized defects such as cracks and crevices, which result in pitting or crevice corrosion. The corrosion resistance of the Ni-C composite in sulfuric acid is similar with that of pure Ni. Electrochemical test results such as passivation were not satisfactory; however, the Ni-C composite still displayed less than $10^{-4}$ $A/cm^2$ passivation current density. Passivation by an anodizing technique could yield better corrosion resistance in the Ni-C composite, approaching that of pure Ni plating. Surface resistivity of pure Ni after passivation was increased by about 8% compared to pure Ni. On the other hand, the surface resistivity of the Ni-C composite with 13 at.% C content was increased by only 1%. It can be confirmed that the metal plate electrodeposited Ni-C composite can be applied as a bipolar plate for fuel cells and redox flow batteries.

• 전기학회논문지
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• 제63권8호
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• pp.1070-1074
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• 2014

With the development of the electronics industry and widespread supply of many different electrical appliances, the factors of the electrical fires are also diversified. For this reason, the fuse, safety-critical component, needs accurate and stable operating characteristics for preventing various fire factor, and also needs various operating characteristics. Especially when the all electrical resistance are dropped by internal short of circuit, high current inrushes and makes the fire. In order to prevent this, very fast acting fuses should be applied. However, existing very fast acting characteristics fuse has less wire dimension of element Ag100% metal than that of fast acting fuse, and it is made of plating with low melting point metals, so it satisfy very fast acting but it can't satisfy durability and safety. For this reason, in this study, through the analyzing fusing characteristics of Ag-Cu alloy composition, the new alloy composition, which implement to very fast acting fuse without decrease of fuse elements dimension, is suggested. And this study classify the operating characteristics changes, a resistance change, and the rated current of the fuse in the overall composition change of Ag-Cu alloying. and it can be utilized for designing fuse.

• 한국산학기술학회논문지
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• 제19권5호
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• pp.551-556
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• 2018

대부분의 용융 아연 도금 설비에 사용되고 있는 소재는 SM45C(기계구조용 탄소강, KS규격)으로, 주로 저렴한 가격적인 측면에 의해 사용되고 있다. 용융 아연 도금의 특성상 해당 용탕에서 발생되어 올라오는 Zn Fume과 고온의 열에 의한 도금 설비의 산화가 발생되고 있으며 현재 용융 아연 도금 설비의 교체 주기의 시기는 6개월으로 많은 시간과 설비 비용이 낭비 되어오고 있다. 이에 본 연구에서는 다양한 소재들(Inconel625, STS304, SM45C)을 이용하여 고온과 Zn Fume 환경에서 강제로 산화 시켜 각각의 부식성을 확인하고 비교 분석하였으며, 각 소재들의 용융 아연 도금 현장 설비에 적용 가능성을 파악하고자 진행하였다. 강제 산화 실험은 650도의 대기로 내에 Zn 용탕을 두고, Ar 가스를 용탕 내에서 직접 버블링하여 Zn fume를 발생시켜 고온, Zn fume에 의한 부식을 행하는 실험을 하였다. 30일 후 Sample들을 꺼내어 표면의 산화층을 EDS, SEM으로 확인하고, 동전위분극 시험을 이용하여 부식성을 비교 분석하였다.

• 한국수소및신에너지학회논문집
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• 제7권1호
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• pp.29-37
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• 1996

Alkaline water electrolysis has been commercialized as the only large-scale method for a long time to produce hydrogen and the technology is superior to other methods such as photochemical, thermochemical water splitting, and thermal decomposition method in view of efficiency and related technical problem. However, such conventional electrolyzer do not have high electric efficiency and productivity to apply to large scale hydrogen production for energy or chemical feedstocks. Solid polymer electrolyte water electrolysis using a perfluorocation exchange membrane as an $H^+$ ion conductor is considered to be a promising method, because of capability for operating at high current densities and low cell voltages. So, this is a good technology for the storage of electricity generated by photovoltaic power plants, wind generators and other energy conversion systems. One of the most important R&D topics in electrolyser is how to minimize cell voltage and maximize current density in order to increase the productivity of the electrolyzer. A commercialized technology is the hot press method which the film type electrocatalyst is hot-pressed to soild polymer membrane in order to eliminate the contact resistance. Various technologies, electrocatalyst formed over Nafion membrane surface by means of nonelectrolytic plating process, porous sintered metal(titanium powder) or titanium mesh coated with electrocatalyst, have been studied for preparation of membrane-electrocatalyst composites. In this study some experiments have been conducted at a solid polymer electrolyte water electrolyzer, which consisted of single cell stack with an electrode area of $25cm^2$ in a unipolar arrangement using titanium mesh coated with electrocatalyst.