• Food Science of Animal Resources
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• v.42 no.2
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• pp.240-251
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• 2022

Fat deposition in animal muscles differs according to the genetics and muscle anatomical locations. Moreover, different fat to lean muscle ratios (quality grade, QG) might contribute to aroma development in highly marbled beef. Scientific evidence is required to determine whether the abundance of aroma volatiles is positively correlated with the amount of fat in highly marbled beef. Therefore, this study aims to investigate the effect of QG on beef aroma profile using electronic nose data and a chemometric approach. An electronic nose with metal oxide semiconductors was used, and discrimination was performed using multivariate analysis, including principal component analysis and hierarchical clustering. The M. longissimus lumborum (striploin) of QG 1++, 1+, 1, and 2 of Hanwoo steers (n=6), finished under identical feeding systems on similar farms, were used. In contrast to the proportion of monounsaturated fatty acids (MUFAs), the abundance of volatile compounds and the proportion of polyunsaturated fatty acids (PUFAs) decreased as the QG increased. The aroma profile of striploin from carcasses of different QGs was well-discriminated. QG1++ was close to QG1+, while QG1 and QG2 were within a cluster. In conclusion, aroma development in beef is strongly influenced by fat deposition, particularly the fat-to-lean muscle ratio with regard to the proportion of PUFA. As MUFA slows down the oxidation and release of volatile compounds, leaner beef containing a higher proportion of PUFA produces more volatile compounds than beef with a higher amount of intramuscular fat.

• Progress in Medical Physics
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• v.18 no.1
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• pp.48-54
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• 2007

This study is to develope a phantom for MOSFET (Metal Oxide Semiconductors Field Effect Transistors) dosimetry and compare the dosimetric properties of standard MOSFET and microMOSFET with the phantom. In this study, the developed phantom have two shape: one is the shape of semi-sphere with 10cm diameters and the other one is the flat slab of $30{\times}30cm$with 1 cm thickness. The slab phantom was used for calibration and characterization measurements of reproducibility, linearity and dose rate dependency. The semi-sphere phantom was used for angular and directional dependence on the types of MOSFETs. The measurements were conducted under $10{\times}10cm^2$ fields at 100cm SSD with 6MV photon of Clinac (21EX, Varian, USA). For calibration and reproducibility, five standard MOSFETS and microMOSFETs were repeatedly Irradiated by 200cGy five times. The average calibration factor was a range of $1.09{\pm}0.01{\sim}1.12{\pm}0.02mV/cGy$ for standard MOSFETS and $2.81{\pm}0.03{\sim}2.85{\pm}0.04 mV/cGy$ for microMOSFETs. The response of reproducibility in the two types of MOSFETS was found to be maximum 2% variation. Dose linearity was evaluated In the range of 5 to 600 cGy and showed good linear response with $R^2$ value of 0.997 and 0.999. The dose rate dependence of standard MOSFET and microMOSFET was within 1% for 200 cGy from 100 to 500MU/min. For linearity, reproducibility and calibration factor, two types of MOSFETS showed similar results. On the other hand, the standard MOSFET and microMOSFET were found to be remarkable difference in angular and directional dependence. The measured angular dependence of standard MOSFET and microMOSFET was also found to be the variation of 13%, 10% and standard deviation of ${\pm}4.4%,\;{\pm}2.1%$. The directional dependence was found to be the variation of 5%, 2% and standard deviation of ${\pm}2.1%,\;{\pm}1.5%$. Therefore, dose verification of radiation therapy used multidirectional X-ray beam treatments allows for better the use of microMOSFET which has a reduced angular and directional dependence than that of standard MOSFET.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.