• Journal of Korean Society of Water and Wastewater
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• v.23 no.1
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• pp.97-105
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• 2009

Analysis was done on the particle size distribution of sediments flown into Saemangeum from the Mankyung and Dongjin River. The organic pollutants and heavy metal existing in the sediments were analyzed, which was further used to study the properties of pollution in the sediments according to the particle size distribution. Conclusions shown below were made from these analyses. The particle size distribution showed a big difference between the upriver areas of Mankyung and Dongjin River. Particles under $75{\mu}m$ showed to be around 85% at Dongjin River, while it showed to be around 70% at Mankyung River. This kind of distribution in particle size concluded in greatly affecting the contamination density of the sediments. From the analysis done on the soil type of sediments, deposition in Mankyung River categorized into Silty loam and Sandy loam, where Silty loam covered most of area and deposition in Dongjin River categorized into Sand, Loamy sand, Silty loam, Sandy loam. Considering the weight ratio, the density of contamination of the sediments by particle size at Dongjin and Mankyung River has been analyzed to show that organic pollutants and heavy metals occupy more than 70% of the whole contamination in the range under the particle size of $75{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.84-84
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• 2008

A multidimensional ZnO light-emitting diode LEDstructure comprising film/nanorods/substrate was fabricated on a p-type Si substrate using metal organic chemical vapor deposition at relatively low growth temperature. The filmlike top layer used for the metal contact was continuously formed on the ZnO nanorods by varying the growth conditions and the resulting structure allowed us to utilize the nanorods with intense emission as an active layer. We investigated the performance of the resulting multidimensional LED. An extremely high breakdown voltage and low reverse leakage current as well as typical rectification behavior were observed in the I-V characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.2-140.2
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic activity for heterogeneous catalysis. In this work, we report the catalytic activity of $Au/TiO_2$, $Au/Al_2O_3$, and $Au/Al_2O_3-CeO_2$ nanocatalysts under CO oxidation fabricated by arc plasma deposition (APD), which is a facile dry process with no organic materials involved. These catalytic materials were characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and $N_2$-physisorption. Catalytic activity of the materials has measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. Using APD, the catalyst nanoparticles were well dispersed on metal oxide powder with an average particle size (3~10 nm). As for catalytic reactivity, the result shows $Au/Al_2O_3-CeO_2$ nanocatalyst has the highest catalytic activity among three samples in CO oxidation, and $Au/TiO_2$, and $Au/Al_2O_3$ in sequence. We discuss the effects of structure and metal-oxide interactions of the catalysts on catalytic activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.76.2-76.2
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• 2013

Advanced electronic application areas have strongly required new materials due to the continuous shrinking dimensions of their devices. Specially, the development and use of metal precursors for atomic layer deposition has been extensively focused on application to electronic devices. Thus the systematic design and synthesis of metal compounds with relevant chemical and physical properties, such as stability, volatility, and resistance to air and moisture are very important in the vacuum deposition fields. In many case, organic ligands for metal precursors are especially focused in the related research areas because the large scale synthesis of the metal complexes with excellent properties exclusively depends on the potential usefulness of the ligands. It is recommended for metal complexes to be in monomeric forms because mononuclear complexes generally show high vapor pressures comparing with their oligomeric structure such as dimer and trimer. Simple metal alkoxides complexes are involatile except several examples such as Ti(OiPr)4, Si(OEt)4, and Hf(OtBu)4. Thus the coordinated atom of alkoxide ligands should be crowded in its own environment with some substituents by prohibiting the coordinated atoms from bonding to another metal through oxygen-bridging configuration. Alkoxide ligands containing donor-functionalized group such as amino and alkoxy which can induce the increasing of the coordinative saturation of the metal complexes and the decreasing of the intermolecular interaction between or among the metal compounds. In this presentation, we will discuss the development of metal compounds which adopted donor-functionalized alkoxide ligands derived from their alcohols for electronic application. Some recent results on ALD using metal precursors such as tin, nickel, ruthenium, and tungsten developed in our group will be disclosed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1664-1667
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• 2007

The belt source evaporation is for the large size AMOLED devices to re-sublimate the organic film deposited on the metal plate. Using the plane source, the PL spectrum of the doped organic film has been studied for the first time. The PL peak of the pure Alq3 film was 512nm and that of the pure Rubrene was 557nm. The PL peak of the 2% Rubrene doped Alq3 film was shifted to $536{\pm}2nm$. The PL peak wavelength measured at the front surface of the film and at the back surface of the film was measured as nearly same as that the doping ratio maintains uniform within the film thickness. In conclusion, the doping control of the organic film becomes real using the belt type plate sublimation deposition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.687-690
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• 2004

The preparation of A1203-SiO2 thin films from less than one micron to several tens of microns in thickness had been Prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous A12O3-SiO2 films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.221-224
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• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.132-132
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.108-108
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• 2001