• Title/Summary/Keyword: Metal line

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Photoluminescence Characteristics of $Y_3Al_5O_{12}:Ce^{3+},Eu^{3+}$ Phosphors by $Eu^{3+}$ ions ($Eu^{3+}$ 농도에 따른 $Y_3Al_5O_{12}:Ce^{3+},Eu^{3+}$ 형광체의 광학적 특성)

  • Kwak, Hyun-Ho;Kim, Se-Jun;Park, Yong-Seo;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.441-442
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    • 2008
  • For this study, Yttrium aluminum garnet (YAG) particles co-doped with $Ce^{3+}$ and $Eu^{3+}$ were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various YAG peaks, with the (420) main peak, appeared at all Eu concentrationin XRD patterns. The YAG phase crystallized with results that are in good agreement with the JCPDS diffraction file 33-0040. The SEM image showed that the resulting YAG:Ce,Eu powders had uniform sizes and good homogeneity. The grain size was about 50nm. The photoluminescence spectra of the YAG:Ce,Eu nanoparticles were investigated to determine the energy level of electron transition related to luminescence processes. It was composed a broad band of $Ce^{3+}$ activator into the weak line peak of $Eu^{3+}$ in YAG host. The PL intensity of $Ce^{3+}$ has the wavelengths of 480-650 nm and The PL intensity of $Eu^{3+}$ has main peak at 590nm.

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The Etching Mechanism of $CeO_2$ Thin Films using Inductively Coupled Plasma (유도 결합 플라즈마를 이용한 $CeO_2$ 박막의 식각 메카니즘)

  • 오창석;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.9
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    • pp.695-699
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    • 2001
  • Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

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Study on Design Change of a Pipe Affected by Liquid Droplet Impingement Erosion (액적충돌침식 영향 배관의 설계변경에 관한 연구)

  • Hwang, Kyeong-Mo;Lee, Chan-Gyu;Bhang, Keug-Jin;Yim, Young-Sig
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.35 no.10
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    • pp.1097-1103
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    • 2011
  • Liquid droplet impingement erosion (LDIE) is caused by the impact of high-velocity droplets entrained in steam or air on metal. The degradation caused by the LDIE has been experienced in steam turbine internals and high-velocity airplane components (particularly canopies). Recently, LDIE has also been observed in the pipelines of nuclear plants. LDIE among the pipelines occurs when two-phase steam experiences a high pressure drop (e.g., across an orifice in a line to the condenser). In 2011, a nuclear power plant in Korea experienced a steam leak caused by LDIE in a pipe through which a two-phase fluid was flowing. This paper describes a study on the design change of a pipe affected by LDIE in order to mitigate the damage. The design change has been reviewed in terms of fluid dynamics by using the FLUENT code.

Roll-type Micro Contact Printing for Fine Patterning of Metal Lines on Large Plastic Substrate (대면적 미세 금속전극 인쇄를 위한 원통형 마이크로 접촉 인쇄공정)

  • Kim, Jun-Hak;Lee, Mi-Young;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.6
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    • pp.7-14
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    • 2011
  • This paper is related to a roll-type micro-contact printing process. The proper parameters such as coating velocity, inking velocity, printing velocity and printing pressure as well as Ag contents of Ag ink were extracted to perform the fine patterning of Ag electrodes. Additionally we developed a process for PDMS with high uniform thickness. Finally, we obtained the Ag fine electrodes on $4.5cm\;{\times}\;4.5cm$ plastic substrate with the line width of 10 um, thickness less than 300 nm, surface roughness less than 40 nm, and the specific resistance of $2.08\;{\times}\;10^{-5}{\Omega}{\cdot}cm$.

A High Performance Co-design of 26 nm 64 Gb MLC NAND Flash Memory using the Dedicated NAND Flash Controller

  • You, Byoung-Sung;Park, Jin-Su;Lee, Sang-Don;Baek, Gwang-Ho;Lee, Jae-Ho;Kim, Min-Su;Kim, Jong-Woo;Chung, Hyun;Jang, Eun-Seong;Kim, Tae-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.2
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    • pp.121-129
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    • 2011
  • It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.

Anticorrosive Monitoring and Complex Diagnostics of Corrosion-Technical Condition of Main Oil Pipelines in Russia

  • Kosterina, M.;Artemeva, S.;Komarov, M.;Vjunitsky, I.;Pritula, V.
    • Corrosion Science and Technology
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    • v.7 no.4
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    • pp.208-211
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    • 2008
  • Safety operation of main pipelines is primarily provided by anticorrosive monitoring. Anticorrosive monitoring of oil pipeline transportation objects is based on results of complex corrosion inspections, analysis of basic data including design data, definition of a corrosion residual rate and diagnostic of general equipment's technical condition. All the abovementioned arrangements are regulated by normative documents. For diagnostics of corrosion-technical condition of oil pipeline transportation objects one presently uses different methods such as in-line inspection using devices with ultrasonic, magnetic or another detector, acoustic-emission diagnostics, electrometric survey, general external corrosion diagnostics and cameral processing of obtained data. Results of a complex of diagnostics give a possibility: $\cdot$ to arrange a pipeline's sectors according to a degree of corrosion danger; $\cdot$ to check up true condition of pipeline's metal; $\cdot$ to estimate technical condition and working ability of a system of anticorrosive protection. However such a control of corrosion technical condition of a main pipeline creates the appearance of estimation of a true degree of protection of an object if values of protective potential with resistive component are taken into consideration only. So in addition to corrosive technical diagnostics one must define a true residual corrosion rate taking into account protective action of electrochemical protection and true protection of a pipeline one must at times. Realized anticorrosive monitoring enables to take a reasonable decision about further operation of objects according to objects' residual life, variation of operation parameters, repair and dismantlement of objects.

THE EFFECTS OF THE OCCLUSAL TRAUMA ON THE PERIODONTAL TISSUES (교합외상(咬合外傷)이 치주조직(齒周組織)에 미치는 영향(影響)에 관(關)한 실험적(實驗的) 연구(硏究))

  • Chang, Wan-Shik
    • The Journal of Korean Academy of Prosthodontics
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    • v.16 no.1
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    • pp.7-11
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    • 1978
  • The author attempted to observe the histological changes of the periodontal structures induced by trauma from occlusion. Eighteen healthy rabbits were devided into two groups; control and experimental group. Three rabbits were kept as control group, while metal crowns were seated on unilateral lower molar teeth of fifteen rabbits were kept as experimental group. And the interocc1usal distance of the incisal edge was kept 1.5mm from begining to the end of the experimental period. Rabbits of each group consisting with three rabbits were killed at the intervals of three days, one week, two weeks, four weeks, eight weeks. The antagonistic teeth of maxilla including periodontal teeth were excised and decalcified for histologic preparation. The results obtained were as follows. 1. Destructions and ulcer formation of the sulcular epithelium and gingival epithelium occurred and persisted from the beginning of the experiment to the four weeks after experiment. The epithelal attachment were proliferated apically. 2. The pressure site were observed at the apical protion, where they showed compression of the periodontal ligament, thrombosis and congestion of blood vessels and hemorrhages. 3. At the pressure site, there appeared osteoclasts and bone resorption from the first week of experiment and it became more prominent at the second week with the extend into the marrow spaces adjacent to the periodontal membrane. 4. The phenomenon of bone apposition and resorption occurred at the fourth week of experiment. The reverse line of bone trabecular were more prominent. And the reactions were ceased at the eighth week of experiment.

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NATURAL CONVECTION HEAT TRANSFER CHARACTERISTICS IN A CANISTER WITH HORIZONTAL INSTALLATION OF DUAL PURPOSE CASK FOR SPENT NUCLEAR FUEL

  • Lee, Dong-Gyu;Park, Jea-Ho;Lee, Yong-Hoon;Baeg, Chang-Yeal;Kim, Hyung-Jin
    • Nuclear Engineering and Technology
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    • v.45 no.7
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    • pp.969-978
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    • 2013
  • A full-sized model for the horizontally oriented metal cask containing 21 spent fuel assemblies has been considered to evaluate the internal natural convection behavior within a dry shield canister (DSC) filled with helium as a working fluid. A variety of two-dimensional CFD numerical investigations using a turbulent model have been performed to evaluate the heat transfer characteristics and the velocity distribution of natural convection inside the canister. The present numerical solutions for a range of Rayleigh number values ($3{\times}10^6{\sim}3{\times}10^7$) and a working fluid of air are further validated by comparing with the experimental data from previous work, and they agreed well with the experimental results. The predicted temperature field has indicated that the peak temperature is located in the second basket from the top along the vertical center line by effects of the natural convection. As the Rayleigh number increases, the convective heat transfer is dominant and the heat transfer due to the local circulation becomes stronger. The heat transfer characteristics show that the Nusselt numbers corresponding to $1.5{\times}10^6$ < Ra < $1.0{\times}10^7$ are proportional to 0.5 power of the Rayleigh number, while the Nusselt numbers for $1.0{\times}10^7$ < Ra < $8.0{\times}10^7$ are proportional to 0.27 power of the Rayleigh number. These results agreed well with the trends of the experimental data for Ra > $1.0{\times}10^7$.

Tolerance Improvement of Metal Pattern Line using Inkjet Printing Technology (잉크젯 프린팅 방식으로 제작된 금속 배선의 선폭 및 오차 개선)

  • Kim, Yong-Sik;Seo, Shang-Hoon;Kim, Tae-Gu;Park, Sung-Jun;Joung, Jae-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.105-105
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    • 2006
  • IT 산업 및 반도체 산업이 발전함에 따라 초소형, 고집적화 시스템의 요구에 대응하기 위해서 고해상도 및 고정밀의 패턴 구현에 관한 많은 연구가 진행되고 있다. 이러한 연구는 각종 산업제품의 PCB(Printed Circuit Board) 및 디스플레이 장치인 PDP(Plasma Display Panel), LCD(Liquid Crystal Display) 등에 적용되어 널리 응용되고 있다. 현재 널리 사용되는 인쇄 회로 기판은 마스킹 후 선택적 에칭 방식을 적용하여 금속 배선을 형성하는 방식을 적용하고 있다. 이러한 방식은 설계가 변경될 경우 마스크를 다시 제작해야 하는 번거로움이 있어 설계 변경이 용이하지 않고 더욱 길어진 생산시간의 증가로 인하여 생산성 및 집적도가 떨어지게 된다. 따라서 최근에는 이러한 한계를 극복하기 위한 방안이 여러 가지 측면에서 시도되고 있으며, 그 중에서도 Inkjet Printing 기술에 대한 관심이 증가하고 있다. 본 연구에서는 Inkjet Printing 방식을 적용하여 금속 배선을 형성하고 선폭과 두께의 오차를 줄여 배선의 Tolerance 를 개선할 수 있는 방안을 제안하였다. Inkjet Printing 방식을 이용한 기존의 금속 배선 형성은 고해상도의 DPI(Dot Per Inch)에서 잉크 액적이 뭉치는 Bulge 현상이 발생되어 원하는 형상 및 배선의 폭을 구현하는데 어려움이 있었다. Bulge 현상은 배선의 불균일성을 야기할 뿐만 아니라 근접한 배선의 간섭에도 영향을 미처 금속 배선의 기능을 할 수 없는 단점을 발생시킨다. 따라서 본 연구에서는 이러한 Bulge 현상을 줄이고 배선간의 간섭을 방지하여 원하는 배선을 용이하게 형성할 수 있는 순차적 인쇄 방식을 적용하였다. 본 연구에서는 노즐직경 35um 의 Inkjet Head 와 나노 Ag 입자 잉크를 사용하여 Glass 표면 위에 배선을 형성하고 배선의 폭과 두께를 측정하였다. 또한 순차적 인쇄 방식을 적용하여 700DPI 이상의 고해상도에서 나타날 수 있는 Bulge 현상이 감소하였음을 관찰하였으며 금속 배선의 Tolerance를 10%내외로 유지할 수 있음을 확인하였다.

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High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes

  • Pharkphoumy, Sakhone;Khurelbaatar, Zagarzusem;Janardhanam, Valliedu;Choi, Chel-Jong;Shim, Kyu-Hwan;Daoheung, Daoheung;Bouangeun, Bouangeun;Choi, Sang-Sik;Cho, Deok-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.196-200
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    • 2016
  • We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (C-V) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n- epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties.