• 제목/요약/키워드: Metal line

검색결과 927건 처리시간 0.031초

비정질 실리콘 박막 트랜지스터 소자 특성 향상을 위한 저 저항 금속 박막 전극의 형성 및 전기적 저항 특성 평가 (Metallizations and Electrical Characterizations of Low Resistivity Electrodes(Al, Ta, Cr) in the Amorphous Silicon Thin Film Transistor)

  • 김형택
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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    • pp.96-99
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    • 1993
  • 대면적 액정 표시판 (Liquid Crystal Display:LCD) panel내(內)의 구동소자인 비정질 실리콘 (amorphous silicon) 박막 트랜지스터 (Thin Film Transistor:TFT)의 구동신호전달 소자특성 향상을 위한 본(本) 연구의 목적은 액정 panel TFT 제조공정 상(上)의 증착금속 전극박막들의 Test Elements Group(TEG) metal line pattern별(別) 전기적 저항특성 평가에 있다. 현(現) TFT 전극용(用)으로 개발이 진행 중(中)인 Aluminum(Al), Tantalum(Ta) 및 Chromium(Cr) 이 특성평가 대상 금속 박막으로 선정 되었으며, 이들 금속막의 증착 thickness 와 TEG metal line width가 저항특성 변수로 성립 되었다. 본(本) 실험을 통해 금속 박막의 TEG line width별(別) 체적(體積)저항 (bulk resistance), 면(面)저항(sheet resistance), 비(比)저항 (resistivity) 및 기판 상(上)의 metal pattern 위치 변화에 따른 전기적 저항 uniformity 특성변화 평가가 있었다. TEG metal line 측정 변위에 따른 저항율의 선형변화 특성도 연구 되었으며, metal line별(別) 전기적 연속, 불연속 배선 단락 특성(electrical continuity test) 관찰도 있었다.

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Metal 건식각 후처리에 따른 부식 특성에 관한 연구 (A Study on the corrosion property by post treatment in the metal dry etch)

  • 문성열;강성준;정양희
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 추계종합학술대회
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    • pp.747-750
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    • 2007
  • 본 연구는 부식을 방지하기 위해서는 metal line식각 후 염소 잔유물 과 plasma charge up을 식각 조건, PR strip조건 및 후속 세정 조건을 최적화함으로써 제거해야 한다고 제안 하였다. Metal line에 다량 분포하는 charge up은 후속 세정의 적정 PH와 만났을 때, 하부 tungsten plug의 부식을 유발 하게 된다. Metal line식각 및 PR strip후 세정에 있어 약액의 종류는 부식에 결정적인 영향을 미친다. Galvanic corrosion을 최소화하기 위한 적정 PH, metal attack을 최소화 할 수 있는 chemistry선택, 높은 식각 부산물 제거 효율의 약액, 최적의 $H_2O$처리 조건 등이 metal부식방지에 있어 결정적인 요소임을 확인하였다.

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Effect of Shield Line on Noise Margin and Refresh Time of Planar DRAM Cell for Embedded Application

  • Lee, Jung-Hwan;Jeon, Seong-Do;Chang, Sung-Keun
    • ETRI Journal
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    • 제26권6호
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    • pp.583-588
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    • 2004
  • In this paper we investigate the effect of a shield metal line inserted between adjacent bit lines on the refresh time and noise margin in a planar DRAM cell. The DRAM cell consists of an access transistor, which is biased to 2.5V during operation, and an NMOS capacitor having the capacitance of 10fF per unit cell and a cell size of $3.63{\mu}m^2$. We designed a 1Mb DRAM with an open bit-line structure. It appears that the refresh time is increased from 4.5 ms to 12 ms when the shield metal line is inserted. Also, it appears that no failure occurs when $V_{cc}$ is increased from 2.2 V to 3 V during a bump up test, while it fails at 2.8 V without a shield metal line. Raphael simulation reveals that the coupling noise between adjacent bit lines is reduced to 1/24 when a shield metal line is inserted, while total capacitance per bit line is increased only by 10%.

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유한요소법을 이용한 비귀금속-도재관 변연부 형태에 따른 응력 분포 분석 (Finite Element Analysis on Stress Distribution in Base Metal-Ceramic Crown Margin Designs)

  • 이명곤;신정욱;김명덕
    • 대한치과기공학회지
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    • 제22권1호
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    • pp.79-88
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    • 2000
  • The objective of this finite element method study was to analyze the stress distribution induced in a maxillary central incisor Ni-Cr base metal coping ceramic crowns with various margin design. Margin designs of crown in this experiment were knife-edge metal margin on chamfer finishing line of tooth preparation(M1), butt metal margin on shoulder finishing line(M2), reinforced butt metal margin on shoulder finishing line(M3), beveled metal margin on bevelde shoulder finishing line(M4). Two- dimensional finite element models of crown designs were subjected to a simulated biting force of 100N which was forced over porcelain near the lingual incisal edge. Base on plane stress analysis, the maxium von Miss stresses(Mpa) in porcelain venner was 0.432, in metal coping was 0.579, in dentin abutment was 0.324 for M1 model, and M2 model revealed in porcelain was 0.556, in metal coping was 0.511, in dentin was 0.339, and M3 model revealed in porcelain was 0.556, in metal coping was 0.794, in dentin was 0.383 for M4 model. All values of each material in metal-ceramic crown were much below the critical failure values.

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이중 결정립 구조 1%Si-Al 금속선에 의한 Migration 수명의 개선 (Improvement of Migration Lifetime by Dual-sized Grain Structure in 1% Si-Al Metal Line)

  • 김영철;김철주
    • 전자공학회논문지A
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    • 제30A권6호
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    • pp.1-7
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    • 1993
  • After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

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다양한 선폭 및 선 간격을 갖는 금속 메쉬에 대한 탄소 나노튜브의 코팅 효과 (Coating effects of carbon nanotubes on metal meshes with various line-spaces and line-widths)

  • 황영진;김부종;박종설;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2015년도 제46회 하계학술대회
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    • pp.1147-1148
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    • 2015
  • This study demonstrates the coating effect of carbon nanotubes on metal meshes, which have been made with various line-spaces and line-width, for touch screen panels. The CNTs have been deposited on metal meshes via electrophoretic deposition (EPD). The sheet resistances, visible transmittances, visible reflectances have been measured before and after electrophoretic deposition. The experimental results confirm that CNT coating metal meshes with various line-spaces and line width can satisfy the requirements that are required for transparent electrodes of touch screen panels.

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접지 접촉 문제가 없는 새로운 DGS 비대칭 브랜치 라인 하이브리드 결합기 (A New Asymmetric Branch Line Hybrid Coupler without Ground Contact Problem of DGS)

  • 임종식;차현원;정용채;박웅희;안달
    • 전기학회논문지
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    • 제57권8호
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    • pp.1416-1421
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    • 2008
  • A 10 dB branch line hybrid coupler included with defected ground structure (DGS) is proposed. In this contribution, a contact between the grounded metal housing and DGS is avoided, which has been a serious problem in applying DGS to high frequency circuits. An isolation between the metal housing and the DGS pattern is provided by inserting additional substrate between DGS and the metal package. Therefore, it is possible to design branch line hybrid couplers having highly asymmetric power dividing ratio using these DGS structure, which is demonstrated in this paper. The designed and fabricated branch line hybrid coupler using DGS is well packaged in a metal housing without touching the ground metal directly. The measurement is performed under realistic practical operating situations because it is packaged in a metal housing. The measured performances of the fabricated 10dB coupler shows a 1:9 asymmetric power dividing ratio at output ports, as predicted. In addition, the measured performances in terms of matching, isolation, and phase difference are in excellent agreement with the simulated characteristics.

Sequential conversion from line defects to atomic clusters in monolayer WS2

  • Gyeong Hee Ryu;Ren-Jie Chan
    • Applied Microscopy
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    • 제50권
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    • pp.27.1-27.6
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    • 2020
  • Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS2 and WS2, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS2 sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.

Hydroforming을 위한 Weld line 최적배치에 관한연구 (A Study on the Weld Line Position Optimization for Hydroforming)

  • 전병희
    • 한국생산제조학회지
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    • 제9권3호
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    • pp.160-168
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    • 2000
  • Hydroforming is a metal forming process that enables circular metal tubes to be formed in to the parts with the complex cross section along the curved axial direction. Recently this hydroforming process is largely used for the production of the automotive parts. This paper presents the results of tube bending and hydroforming simulations in cases of the varying weld line positions of the tube. Ten cases of prebending and hydroforming simulations are carried out to find the optiaml weld line position.

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강관을 이용한 급전선금구의 응력해석 및 경제성 분석 (Analysis on the Stress and Economy of Feeder Supporting Metal Designed a Steel Pipe)

  • 나현;안영훈;이기원
    • 한국철도학회논문집
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    • 제11권5호
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    • pp.499-503
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    • 2008
  • 교류전기철도 구간의 전차선과 급전선은 동일한 전철주에 설치된다. 전철주는 전차선과 급전선으로부터 각기 다른 하중을 받는다. 이러한 사실을 기본으로 새로운 형태와 재질의 급전선 금구를 고안하였다. 강관으로 디자인된 급전선 금구의 안전성을 FEM program을 통하여 시험하였다. 새로운 강관금구는 경제성측면에서 기존의 금구와 대비되며, 시험결과에서 금전선 금구고 안정적이고 경제적이라는 것을 알 수 있다. 따라서, 본 논문에서 제안한 금구는 VE 기본사항을 수행하였으며, 새로운 지지금구의 형태로 반영이 가능할 것이다.