• 제목/요약/키워드: Metal ion implanter

검색결과 4건 처리시간 0.019초

CU+ ION EXTRACTION FROM A MODIFIED BERNAS ION SOURCE IN A METAL-ION IMPLANTER

  • Hong, In-Seok;Lee, Hwa-Ryun;Trinh, Tu Anh;Cho, Yong-Sub
    • Nuclear Engineering and Technology
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    • 제41권5호
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    • pp.709-714
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    • 2009
  • An ion implanter, which can serve as a metal-ion supply, has been constructed and performance tested. Copper ions are generated and extracted from a Bernas ion source with a heating crucible that provides feed gases to sustain the plasma. Sable arc plasmas can be sustained in the ion source for a crucible temperature in excess of $350^{\circ}C$. Stable extraction of the ions is possible for arc Currents less than 0.3 A. Arc currents increase with the induced power of a block cathode and the transverse field in the ion source. $Cu^+$ ions in the extracted beam are separated using a dipole magnet. A $20{\mu}A$ $Cu^+$ ion current can be extracted with a 0.2 A arc current. The ion current can support a dose of $10^{16}ions/cm^2$ over an area of $15\;cm^2$ within a few hours.

MEVVA ion Source And Filtered Thin-Film Deposition System

  • Liu, A.D.;Zhang, H.X.;Zhang, T.H.;Zhang, X.Y.;Wu, X.Y.;Zhang, S.J.;Li, Q.
    • Journal of Korean Vacuum Science & Technology
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    • 제6권2호
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    • pp.55-57
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    • 2002
  • Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

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Filtered Plasma Deposition and MEVVA Ion Implantation

  • Liu, A.D.;Zhang, H.X.;Zhang, T.H.
    • Journal of the Korean Vacuum Society
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    • 제12권S1호
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    • pp.46-48
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    • 2003
  • The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

The Characteristic Study on the Extraction of a Co Ion in the Metal Ion Implanter (금속이온 주입기에서의 Co 이온의 인출 특성 연구)

  • Lee, Hwa-Ryun;Hong, In-Seok;Trinh, Tu Anh;Cho, Yong-Sub
    • Journal of the Korean Vacuum Society
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    • 제18권3호
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    • pp.236-243
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    • 2009
  • Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).