• 자원리싸이클링
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• 제23권6호
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• pp.63-67
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• 2014

갈륨은 주로 산화물 반도체용 타겟이나 LED 칩을 만드는 중요한 소재로 사용하고 있는데 아직까지 폐기물로부터 재자원화에 의한 순환량이 매우 낮다. 이로 인해 갈륨을 함유하고 있는 대부분의 폐자원은 해외로 유출되고 원재료는 수입에 의존하고 있다. 따라서 희유금속인 갈륨을 함유하고 있는 저품위 갈륨으로부터 갈륨을 회수하여 고순도화하는 방법을 연구 하였다. 전처리 과정으로 스크랩을 미분쇄하여 산으로 침출하였다. 침출액내 인듐은 치환으로 석출시켜 분리한 후 알칼리를 사용하여 갈륨과 아연을 수산화물로 침전시켜 여과 분리하였다. 갈륨과 아연수산화물을 알칼리용액으로 침출시켜 전해액을 제조하였고 전해채취로 갈륨과 아연메탈을 회수하였다. 갈륨과 아연은 진공정제를 통하여 아연을 제거하고 고순도의 갈륨을 회수하였다.

• 한국분말재료학회지
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• 제4권2호
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• pp.122-132
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• 1997

Nanostructured(NS) W-Cu composite powders of about 20~30 nm grain size were synthesized by mechanical alloying. The properties of NS W-Cu powder and its sintering behavior were investigated. It was shown from X-ray diffraction and TEM analysis that the supersaturated solid solution of Cu in W was not formed by the mechanical alloying of mixed elemental powders, but the mixture of W and Cu particles with nanosize grains, i.e., the nanocomposite powder was attained. Nanocomposite W-20wt%Cu and W-30wt%Cu powders milled for 100 h were sintered to the relative density more than 96% and 98%, respectively, by sintering at 110$0^{\circ}C$ for 1 h in $H_2$. Such a high sinterability was attributed to the high homogeneous mixing and ultra-fine structure of W and Cu phases as well as activated sintering effect by impurity metal introduced during milling.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.752-756
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• 2002

Variable weld bead penetrations related to the base metal chemistry of stainless steels in GTA welding have been under constant investigations due to their industrial implications. It has been proposed that among other elements, the sulfur content of steels determines the weld pool geometry, particularly its penetration. It is suggested that the surface tension temperature gradient of steels becomes positive with appropriate dosing in sulfur and results in inward melt flow, propitious for deeper welds. However, the chemistry of industrial steels is complex due to the presence of multiple minor elements either deliberately added or remnant impurity traces. With this in view, investigations on 41 austenitic and nine martensitic stainless steels were carried to see if there existed any possible relation between the weld profile and some of the designated elements. The results suggest no direct correlation between sulfur or any other major or trace element and weld penetration. At first glance the results are contradictory to what is often asserted.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1199-1202
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• 2005

Inside of working PDP, there exist highly reactive conditions in the gap between two glass panels. MgO film and phosphor have been investigated as a function of discharge, also phosphor and sealing frits have been investigated as a function of temperature. Changes of impurity generation of MgO, phosphor and sealing fits were measured by using x-ray photoelectron spectroscopy (XPS) and quadropole mass spectroscopy (XPS) and quadropole mass spectrometer (QMS). Impurities such as CO, $CO_2$, OH and $H_2O$ were increased during discharge and heating treatment. Gaseous impurities such as carbon compounds and water deteriorated the characteristics of PDP operation during of lifetime. So metal is used to remove the impurities of phosphor and sealing frits during hearting, the result that the quantity of the impurities such as carbon monoxide and water was reduced.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.236-236
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• 2010

P-type의 단결정, 다결정, UMG 기판을 이용하여 phosphorus툴 확산시킨 후 열처리한 external gettering 방식으로 실리콘 내부에 있는 불순물을 제거하였고, 기판의 lifetime 변화를 $\mu$-PCD를 이용하여 측정하였다. phosphorus를 $850^{\circ}C$에서 기판 내부로 20분 확산시킨 후 기판의 온도와 시간을 변화시키면서 gettering 공정을 시행하였다. 에미터층으로 인해 기판의 bulk lifetime이 부정확해 지는 것을 방지하기 위해서 NaOH를 이용하여 에미터층을 제거한 후 $\mu$-PCD를 이용하여 lifetime을 측정하였다. 또한 기판의 표면효과를 최소화하기 위해서 lifetime 측정전에 iodine을 이용하여 표면 passivation을 하였다.

• 한국세라믹학회지
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• 제45권12호
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• pp.782-787
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• 2008

Ni-ceria cermets have been extensively investigated as candidates for the anode in intermediate-temperature solid oxide fuel cells. We have used the citric method to synthesize nanocomposite powders consisting of NiO (Ni metal content: $40{\sim}60%$ by volume) highly dispersed in $Ce_{0.9}Gd_{0.1}O_{1.95}$ (CGO). The microstructure characteristics and sintering behaviors of the nanocomposites were investigated. No impurity phases were observed and the shrinkage of these substrates matched well with that of a CGO electrolyte with a specific surface area of $11\;m^2/g$. Densification of the CGO electrolyte layer to $<5\;{\mu}m$ thickness was achieved by co-firing the laminated electrolyte with the porous NiO-CGO substrate at $1400^{\circ}C$ for 6 h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.173-179
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• 2006

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.