• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.77-82
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• 2022

Recently, research on the development of low-cost/high-efficiency water electrolysis catalysts to replace noble metal catalysts is being actively conducted. Since overvoltage reduces the overall efficiency of the water splitting device, lowering the overvoltage of the oxygen evolution reaction (OER) is the most important task in order to generate hydrogen more efficiently. Currently, noble metal catalysts show excellent characteristics in OER performance, but they are experiencing great difficulties in commercialization due to their high price and efficiency limitations due to low reactivity. In this study, a water electrolysis catalyst Ni-MWCNT was prepared by successfully doping Ni into the MWCNTs structure through the pulsed laser ablation in liquid (PLAL) process. High resolution-transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were performed for the structure and chemical composition of the synthesized Ni-MWCNT. Catalytic oxygen evolution reaction evaluation was performed by linear sweep voltammetry (LSV) overvoltage characteristics, Tafel slope, electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and Chronoamperometry (CA) was used for measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.55-60
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• 2022

In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900℃ under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 ㎛) and a SiC interlayer (~23 ㎛). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.

• Clean Technology
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• v.21 no.3
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• pp.200-206
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• 2015

In order to investigate the effect of cerium oxide addition, Cu-ZnO-CeO₂ catalysts were prepared using co-precipitation method for water gas shift (WGS) reaction. A series of Cu-ZnO-CeO₂ catalyst with fixed Cu Content (50 wt%, calculated as CuO) and a given ceria content (e.g., 0, 5, 10, 20, 30, 40 wt%, calculated as CeO₂) were tested for catalytic activity at a GHSV of 95,541 h^-1, and a temperature range of 200 to 400 ℃. Cu-ZnO-CeO₂ catalysts were characterized by using BET, SEM, XRD, H₂-TPR, and XPS analysis. Varying composition of Cu-ZnO-CeO₂ catlysts led the difference characteristics such as Cu dispersion, and binding energy. The optimum 10 wt% doping of cerium facilitated catalyst reduction at lower temperature and improved the catalyst performance greatly in terms of CO conversion. Cerium oxide added catalyst showed enhanced activities at higher temperature when it compared with the catalyst without cerium oxide. Consequently, ceria addition of optimal composition leads to enhanced catalytic activity which is attributed to enhanced Cu dispersion, lower binding energy, and hindered Cu metal agglomeration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.222-227
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• 2018

$Zn_{1-x}Co_x$ Zeolitic Imidazolate Framework (ZIF) (x = 0~0.05) were prepared by the co-precipitation of $Zn^{2+}$ and $Co^{2+}$ using 2-methylimidazole, which were converted into pure and Co-doped ZnO nanoparticles by heat treatment at $600^{\circ}C$ for 2 h. Homogeneous Zn/Co ZIFs were achieved at x < 0.05 owing to the strong coordination of the imidazole linker to $Zn^{2+}$ and $Co^{2+}$, facilitating atomic-scale doping of Co into ZnO via annealing. By contrast, heterogeneous Zn/Co ZIFs were formed at $x{\geq}0.05$, resulting in the formation of $Co_3O_4$ second phase. To investigate the potential as high-performance gas sensors, the gas sensing characteristics of pure and Co-doped ZnO nanoparticles were evaluated. The sensor using 3 at% Co-doped ZnO exhibited an unprecedentedly high response and selectivity to trimethylamine, whereas pure ZnO nanoparticles did not. The facile, bimetallic ZIF derived synthesis of doped-metal oxide nanoparticles can be used to design high-performance gas sensors.

• Journal of the Korean Chemical Society
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• v.46 no.1
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• pp.69-75
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• 2002

The $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ blue and red emitting phosphors were prepared by the combinatorial chemistry method. The combinatorial library was designed to investigate the luminescence of the $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ phosphors under 254 nm and 147 nm excitations. In addition, the crystallinity and morphology of phosphors were checked by XRD and SEM. Based on the results from the combinatorial screenings, luminescent properties of phosphors are strongly dependent on the concentration of doping metal ions. It was found that a new phosphor $Y_{0.88}(P_{0.92}Nb_{0.05}V_{0.03})O_4:Eu_{0.12}$ shows excellent luminescent efficiency comparing to the $Y_{0.88}PO_4:Eu_{0.12}$ red phosphor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of the Korean Electrochemical Society
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• v.15 no.4
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• pp.230-235
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• 2012

Polymer electrolytes consisted of $BF_3LiMA$ and 300 (PEGMA300) or 1100 (PEGMA1100) g $mol^{-1}$ of PEGMA were prepared and the electrochemical properties were characterized. Interestingly, the AC-impedance measurement shows $1.22{\times}10^{-5}S\;cm^{-1}$ of room temperature ionic conductivity from PEGMA1100 based solid polymer electrolytes while $8.54{\times}10^{-7}S\;cm^{-1}$ was observed in PEGMA300 based liquid polymer electrolytes. The more suitable coordination between lithium ion and ethylene oxide (EO) unit might be the reason of higher ionic conductivity which can be possible in PEGMA1100 based electrolytes since it has 23 EO units in monomer. The lithium ion transference number was found to be 0.6 due to the side reactions between $BF_3$ and lithium metal expecially for longer time but 0.9 was observed within 3000 seconds of measuring time which is strong evidence of a single-ion conductor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.309-312
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• 2017

The ceria powder is excellent in oxygen storage capacity (OSC) through the oxidation and reduction reaction of Ce ions and is used as a typical material for a three-way catalyst of an automobile which purifies the exhaust gas. However, since ceria generally has poor thermal stability at high temperatures, it is doped with metal ions to improve thermal stability. Therefore, in this study, Zr ions were doped into ceria powder, and their characteristics were further improved due to the increase of specific surface area with decreasing particle size due to doping. In this study, the synthesis of zirconium doped ceria nanopowder was synthesized by hydrothermal process. In order to synthesis Zr ion doped ceria nanopowder, the precursor reaction at was $200^{\circ}C$ for 6 hours. The average particle size of synthesized Zr doped $CeO_2$ nanopowder was below 20 nm. The specific surface area of synthesized Zr ion doped ceria nanopowder increased from $52.03m^2/g$ to $132.27m^2/g$ with Zr increased 30 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.