• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.13 no.4
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• pp.315-319
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• 2015

A high-throughput electrorefiner has been developed for commercialization use by enhancing the uranium recovery from the reduced metal which is produced from the oxide reduction process. It is necessary to scrap and effectively collect uranium dendrites from the surface of the solid cathode for high yield. When a steel electrode is used as the cathode in the electrorefining process, uranium is deposited and regularly stuck to the steel cathode during electrorefining. The sticking coefficient of a steel cathode is very high. In order to decrease the sticking coefficient of the steel cathode effectively, vibration mode was applied to the electrode in this study. Uranium dendrites were scraped and fell apart from the steel cathode by a vibration force. The vibrational scraping of the steel cathode was compared to the self-scraping of the graphite cathode. Effects of the applied current density and the vibration stroke on the scraping of the uranium dendrites were also investigated.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.591-596
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• 2006

Topology and molecular ordering of NPD(4,4'-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl) thin films deposited under magnetic field with post-deposition annealing were investigated. NPD was deposited onto ITO glass substrates via thermal evaporation process in vacuum. It is of great importance for highly oriented organic/metal films to have improved device performances such as higher current density and luminance efficiency. AFM (Atomic Force Microscope) and XRD (X-Ray Diffraction) analyses were used to characterize the topology and structure of oriented NPD films. The multi-source meter was used to observe the current-voltage characteristics of the ITO (Indium-Tin Oxide) / NPD (4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl) / Al (Aluminum) device. While NPD thin films deposited under magnetic field were not molecularly well aligned according to the XRD results, the films after post-deposition annealing at $130^{\circ}C$ were well-oriented. AFM images show that NPD thin films deposited under magnetic field had a smoother surface than those deposited without magnetic field. The current-voltage performance of NPD thin films was improved due to the enhanced electron mobility in the well-aligned NPD films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.77-83
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• 2002

In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.

• Korean journal of food and cookery science
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• v.17 no.4
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• pp.353-358
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• 2001

The leaves of Duchung(Eucommia ulmoides), an oriental medicinal plant, have a peculiar aroma of Chinese medicine and astringent taste, which make the consumer be reluctant to Duchung leaf tea. Therefore, the purpose of this study was to develop a mild flavored Duchung leaf tea by mixing with other plants. The flavor patterns of developed tea were analyzed using an electronic nose. Polygonatum odoratum and Elsholtzia splendens were used for improving the flavor of Duchung leaf tea. The addition of 20, 30 and 40% of Polygonatum odoratum improved the overall acceptance in hedonic sensory evaluation. The flavor pattern of the tea was described by principal component analysis(PCA) and the resistance ratio(R/cub gas/R$\_$air/) of sensors. The PCA plot was also used to explain the mild flavor of the tea, which was extended from the right side(positive value of the first principal component) to the left side(negative value). Analysis by using an electronic nose with metal oxide sensors could be applied to detect whether mixed Duchung leaf tea was acceptable or not.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.48-51
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• 2007

In order to investigate the effects of particle size and specific surface area(BET area) of spinel powder, $LiMn_2O_4$ were synthesized using metal oxide precursor by co-precipitation method(CoP) and solid state reaction (SSR) .X-ray diffraction(XRD) patterns revealed that the both prepared powder has a well developed spinel structure with Fd3m space group. The $LiMn_2O_4$ prepared by co-precipitation showed spherical morphology with narrow size distribution. However, the $LiMn_2O_4$ prepared by solid state reaction showed relatively smaller particles with irregular shape. The measured BET areas of the powers are $0.8m^2g^{-1}$ (CoP) and $3.6m^2g^{-1}$(SSR). The electrochemical performance of the Prepared $LiMn_2O_4$ powders was evaluated using coin type cells(CR2032) at elevated temperature ($55^{\circ}C$). The $LiMn_2O_4$ prepared by co-precipitation showed the better cycling performance(82.3%capacity retention at $50^{th}$ cycle) than that of the $LiMn_2O_4$(68.3%) prepared by solid state reaction at elevated temperature.

• Journal of the Korean Electrochemical Society
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• v.13 no.3
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• pp.211-216
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• 2010

Boron trifluoride lithium methacrylate ($BF_3$LiMA)-based gel polymer electrolytes (GPEs) were synthesized with various $BF_3$LiMA concentration to elucidate the effect on ionic conductivity and electrochemical stability by a AC impedance and linear sweep voltammetry (LSV). As a result, the highest ionic conductivity reached $5.3{\times}10^{-4}Scm^{-1}$ at $25^{\circ}C$ was obtained for 4 wt% of $BF_3$LiMA. Furthermore, high electrochemical stability up to 4.3 V of the $BF_3$LiMA-based GPE was observed in LSV measurement since the counter anion was immobilized in this self-doped system. On the other hand, it was assumed that there was a rapid decomposition of electrolytes on a lithium metal electrode which results in a high solid electrolyte interface (SEI) resistance. However, a high stability toward graphite or lithium cobalt oxide (LCO) electrode thereby a low SEI resistance was observed from the AC impedance measurement as a function of storage time at $25^{\circ}C$. Consequently, the high ionic conductivity, good electrochemical stability and the good interfacial compatibility with graphite and LCO were achieved in $BF_3$LiMA-based GPE.

• Journal of the Korea Society for Simulation
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• v.17 no.4
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• pp.199-208
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• 2008

Lately, since Complementary Metal Oxide Semiconductor(CMOS) image sensor system has low power, low cost and been miniaturized, hardware and applied software studies using these strengths are being carrying on actively. However, the products equipped with CMOS image sensor based polling method yet has several problems in degree of completeness of applied software and firmware, compared with hardware’s. CMOS image sensor system has an ineffective synchronous problem due to superfluous message exchange. Also when a sending of data is delayed continually, overhead of re-sending is large. So because of these, it has a problem in structural stability according to Polling Method. In this study, polling cycle was subdivided in high-speed synchronization method of firmware -based through MCU and synchronization method of Stepwise was proposed. Also, re-connection and data sending were advanced more efficiently by using interrupt way. In conclusion, the proposed method showed more than 20 times better performance in synchronization time and error connection. Also, a board was created by using C328R board of CMOS image sensor-based and ATmega128L which has low power, MCU and camera modules of proposed firmware were compared with provided software and analyzed in synchronization time and error connection.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.538-544
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• 1998

The spallation of a thermal barrier coating layer depends on the formation of brittle spinels. thermal expansion mismatch between ceramic and metal. the phase transformation of a ceramic layer and residual stress of coating layer. In this work. the formation mechanism of oxide scale formed by oxidation treatment at 90$0^{\circ}C$ was investigated in order to verify oxidation behavior at the interface between E-beam coated $Zr0_2$-7wt.% $Y_20_3$ and plasma sprayed CoNiCrAIY. Some elements distributed in the bond coating layer were selectively oxidized after oxidation. At the initial time of oxidation. AI-depletion zone and $\alpha$-$Al_O_3$,O, were formed at the bond coating layer by the AI-outward diffusion. After layer grew until critical thickness. spinels. $Cr_20$, and $C0_2CrO_4$ by outward diffusion of Co. Cr, Ni were formed. It was found that the formation of spinels may be related to the spallation of $Zr0_2$-7wt.% $Y_20_3$ during isothermal oxidation.