• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1053-1055
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• 2002

Recently CRT is getting large-sized, Flatness and High Fine Pitched in the meantime the raw material for shadow mask is in rapid progress of thinness, Low Thermal Expansion and high strength.Until now we have used AK(Aluminum Killed) & Invar(Fe-Ni alloy) materials for main raw material of shadow mask component. However recently Nb and Co addition and Nb+Co addition, which has advantage of Low Thermal Expansion and High Strength. has been developed as well as applying in mass production as CRT's trend has become more flat and fine pitch. Among of them, Co addition has been mass production as forming type (Flat CRT) with the beneficial effect of low thermal expansion & high strength for the first time. Since then Nb+Co addition has been used in mass production by the request of much higher strength of shadow mask component. In case of Nb addition, It's thermal expansion coefficient is a little lower than normal Invar and a little higher than Co addition, meanwhile Its Mechanical property is almost similar to Co Addition. The used samples of this experiment are 36%Ni + Fe, 32%Ni + 5%Co + Fe, 32%Ni + 5%Co + 0.3%Nb + Fe, 32%Ni + 0.3%Nb + Fe with heat treatment temperature of 600$^{\circ}C$, 650$^{\circ}C$, 700$^{\circ}C$, 750$^{\circ}C$, 800$^{\circ}C$, 850$^{\circ}C$, 900$^{\circ}C$ respectively under the condition of 15min holding time. After heat treatment, we have observed the change of mechanical property with addition of small elements through mechanical property investigation and metal structure observation as well as transition of thermal expansion coefficient by measuring of thermal expansion coefficient at 850$^{\circ}C$. In conclusion, 5%Co addition indicates that its thermal expansion coefficient is very similar under the condition of at 850$^{\circ}C$ for 15min 's heat treatment. From the experimental result it is suggested that Co addition is mostly suitable for Doming property and Nb addition is mostly suitable for Drop property.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.275-280
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• 2005

We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.10a
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• pp.261-266
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• 1993

This paper describes a 3-dimensional profile measurement method which was intended especially for sheet metal products such as shadow masks. The method is based upon machine vision in which the height variation of the surface is measured by software auto-forus image processing techniques. The method is found suitable for flexible surfaces with interrupt.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.518-520
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• 1987

The semiconductor-metal-semiconductor structure is considered to be promising for high speed electronic devices. To realize this, the selective LPE and the proper design of epitaxial mask were adopted. Enhanced As diffusion made it possible to grow GaAs over W on GaAs. Buried W Schottky diode was fabricated and the rectifying I-Y characteristics were obtained.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.115-115
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• 2011

고성능 금속 커패시터 개발을 목적으로 aluminum film에 균일한 etch fit를 형성하는 연구를 진행하였다. Etch mask로 PI를 사용하여 Aluminum film에 균일한 형태의 etch fit를 형성하였다. 균일하게 에칭 된 aluminum film들은 capacitance를 측정하여 에칭 조건에 따른 capacitance 변화를 확인하였다.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1553-1555
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• 2008

Super-hydrophobic treated Polyimide film was used as a flexible substrate for developing a new method of metallization. Hydrophilic patterns were fabricated by IN irradiation through shadow mask. Patterned super-hydrophobic substrate was dipped into a bath containing silver nano ink Silver ink was only coated on hydrophilic patterned area. Metal lines of $600{\mu}m$ pitch were fabricated successfully. However, their thickness was too thin to serve as interconnection. To overcome this problem, iterative dipping was conducted. After repeating five times, the thickness of silver metal lines were increased to over than $2{\mu}$. After heat treatment of silver lines, their resistivities were reduced to order of $30{\mu}{\Omega}$-cm the similar level of values reported in other literatures. So, a new method of metallization has high potential for application of RFID antenna and flexible electronics substrates.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of the Korean institute of surface engineering
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• v.46 no.3
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• pp.99-104
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• 2013

The simple and cost-effective microfabrication method of photosensitive glass (PSG) using metal patterning and blank exposure was proposed. Conventional photolithography for micromachining of PSG needs a costly quartz mask which has high transmittance as an optical property. However, in this study the process was improved through the combination of micro-patterned Ti thin film and blank UV exposure without quartz mask. The effect of UV exposure time as well as the DHF etching condition was investigated. UV exposure test was performed within the range from 3 min to 9 min. The color and etch result of PSG exposed for 5 min were the most clear and effective to etch more precisely, respectively. The etching results of PSG in diluted hydrofluoric acid (DHF) with a concentration of 5, 10, 15 vol% were compared. The effect on the side etch was insignificant while the etch rate was proportional as the concentration increased. 10 vol% DHF results not only high etch rate of 75 ${\mu}m/min$ also lower side etch value after PSG etching. This method facilitates the microfabrication of PSG with various patterns and high aspect ratio for applying to advanced applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.