• Title/Summary/Keyword: Metal Ion Resistance

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Effect of SO42- Ion on Corrosion and Electrochemical Migration Characteristics of Eutectic SnPb Solder Alloy (공정조성 SnPb Solder 합금의 부식 및 Electrochemical Migration 특성에 미치는 SO42- 이온의 영향)

  • Jung, Ja-Young;Yoo, Young-Ran;Lee, Shin-Bok;Kim, Young-Sik;Joo, Young-Chang;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.17 no.1
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    • pp.43-49
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    • 2007
  • Electrochemical migration phenomenon is correlated with ionization of anode electrode, and ionization of anode metal has similar mechanism with corrosion phenomenon. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in $Na_2SO_4$ solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Sn Ivas primarily ionized in ${SO_4}{^2-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for electrochemical migration resistance of solder alloys.

Performance Evaluation of Ti-Al-N coated Endmill by Arc ton Plating (아크이온플레이팅에 의한 Ti-Al-N코팅 엔드밀의 성능평가)

  • 이상용;강명창;김정석;김광호
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2002.04a
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    • pp.251-254
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    • 2002
  • The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

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A Study on the Development and Characteristics of Strain Gauge using Sputter Machining (스파타가공법을 이용한 스트레인 게이지의 개발 및 특성에 관한 연구)

  • Han, E.K.;Rho, B.O.;Lee, M.H.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.9 no.2
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    • pp.50-60
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    • 1989
  • The control of resistance of foil strain gauge is accomplished by means of etching technique. Thus, there is an irregularity in metal foil. In order to solve this problem, ion sputter machining method has been used to make strain gauge in this study and the characteristics of this strain gauge are investigated. As the result of this study, it was possible to make a flexible strain gauge which can be used to measure the stress. The strain gauge made by authors shows superior characteristics in creep, O point variance, hysteresis and nonlinearity by surrounding temperature.

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Effect of ICCP Potential with Electrolyte on Corrosion and Discolor of Silver (은의 부식 및 변식에 미치는 전해질 용액에 따른 ICCP 전압의 영향)

  • Shin, Byung-Hyun;Kim, Do-Hyung;Chung, Won-Sub
    • Journal of the Korean institute of surface engineering
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    • v.53 no.5
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    • pp.207-212
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    • 2020
  • Silver is an inexpensive precious metal and is used in various jewelry in Asia. Although silver has high potential, it has corrosion resistance that is vulnerable to boiling sulfuric acid and nitric acid. So, silver research is needed to prevent the corrosion with environment. But silver corrosion is not studied. sulfuric acid make the uniform corrosion and chloride ion make the pitting corrosion. ICCP inhibits the corrosion because it offset electrons. This study used a potential from - 4 V to 4 V to check the effect of potential. Corrosion rate is lowet at -1 V.

Electrical Switching Characteristics of Ge-Se Thin Films for ReRAM Cell Applications

  • Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.343-344
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    • 2012
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Resistive Memory Switching in Ge5Se5 Thin Films

  • Kim, Jang-Han;Hwang, Yeong-Hyeon;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.326-326
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    • 2014
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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MODIFICATION OF METAL MATERIALS BY HIGH TEMPERATURE PULSED PLASMA FLUXES IRRADIATION

  • Vladimir L. Yakushin;Boris A. Kalin;Serguei S. Tserevitionov
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.05a
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    • pp.1-1
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    • 2000
  • The results of the modification of metal materials treated by high temperature pulst:d plasma fluxes (HTlPPF) with a specific power of incident flux changing in the $(3...100)10^5{]\;}W/cm^2$ range and a pulse duration lying from 15 to $50{\;}\mu\textrm{s}$ have been presented. The results of HTPPF action were studied on the stainless steels of 18Cr-l0Ni, 16Cr- 15Ni, 13Cr-2Mo types; on the structural carbon steels of (13...35)Cr, St. 3, St. 20, St. 45 types; on the tool steels of U8, 65G, ShHI5 types, and others; on nickel and high nickel alloy of 20Cr-45Ni type; on zirconium- and vanadium-base alloys and other materials. The microstructure and properties (mechanical, tribological, erosion, and other properties) of modified materials and surface alloying of metals exposed to HTPPF action have been investigated. It was found that the modification of materials by HTPPF resulted in a simultaneous increase of several properties of the treated articles: microhardness of the surface and layers of 40...60 $\mu\textrm{m}$ in depth, tribological characteristics (friction coefficient, wear resistance), mechanical properties ({\sigma_y}, {\;}{\sigma_{0.2}}.{\;}{\sigma_r}) on retention of the initial plasticity ($\delta$), corrosion resistance, radistanation erosion under ion irradiation, and others. The determining factor of the changes observed is the structural-phase modification of the near-surface layers, in particular, the formation of the fine cellular structure in the near-surface layers at a depth of $20{\;}{\mu\textrm{m}}$ with dimension of cells changing in the range from 0.1 to $1., 5{\;}\mu\textrm{m}$, depending on the kind of material, its preliminary treatment, and the parameters of plasma fluxes. The remits obtained have shown the possibility of purposeful surface alloying of metals exposed to HTPPF action over a depth up to 20...45 $\mu\textrm{m}$ and the concentration of alloying element (Ni, Cr, V) up to 20 wt.%. Possible industrial brunches for using the treatment have been also considered, as well as some results on modifying the serial industrial articles by HTPPF.

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A Study on the Adsorption of U(VI), NiI(II), Nd(III) Metal Ions Using Synthetic Resin (합성수지를 이용한 U(VI), NiI(II), Nd(III) 금속이온들의 흡착에 관한 연구)

  • 박성규;김준태;노기환
    • Journal of environmental and Sanitary engineering
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    • v.15 no.1
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    • pp.77-87
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    • 2000
  • Several new ion exchange resins have been synthesized from chloromethyl styrene-l,4-divinylbenzine with 1%, 2%, 10% and 20%-crosslink and macrocyclic ligands of cryptand type by interpolymerization method. The adsorption characteristics and the pH, time, solvents and concentration dependence of the adsorption of metal ions by this resin were studied. The correlation between the separation characteristics of uranium and transition metal on the resins and the stability constants of complexes with macrocyclic ligands have been examined. The resins were very stable in both acidic and basic media and have good resistance to heat. The $UO_2^{2+}$ was not adsorbed on the resins below pH 3.0, but the power of adsorption of $UO_2^{2+}$ increased rapidly above pH 4.0. The optimum equilibrium time for adsorption of metallic ions was two hours and adsorptive power decreased in proportion to crosslink size of the resins and order of dielectric constants of solvents used and the selective sequence for metal cations was in the order of $UO_2^{2+}$, $Ni{2+}$ and $Nd{3+}$.

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Electrochemical Characteristics of Osteoblast Cultured Ti-Ta Alloy for Dental Implant (골아세포가 배양된 치과 임플란트용 Ti-Ta합금의 전기화학적 특성)

  • Kim, W.G.;Choe, H.C.;Ko, Y.M.
    • Journal of the Korean institute of surface engineering
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    • v.41 no.2
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    • pp.69-75
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    • 2008
  • Electrochemical behaviors of surface modified and MC3T3-E1 cell cultured Ti-30Ta alloys have been investigated using various electrochemical methods. The Ti alloys containing Ta were melted by using a vacuum furnace and then homogenized for 6 hrs at $1000^{\circ}C$. MC3T3-E1 cell culture was performed with MC3T3-E1 mouse osteoblasts for 2 days. The microstructures and corrosion resistance were measured using FE-SEM, XRD, EIS and potentiodynamic test in artificial saliva solution at $36.5{\pm}1^{\circ}C$. Ti-Ta alloy showed the martensite structure of ${\alpha}+{\beta}$ phase and micro-structure was changed from lamellar structure to needle-like structure as Ta content increased. Corrosion resistance increased as Ta content increased. Corrosion resistance of cell cultured Ti-Ta alloy increased predominantly in compared with non cell cultured Ti- Ta alloy due to inhibition of the dissolution of metal ion by covered cell. $R_p$ value of MC3T3-E1 cell cultured Ti-40 Ta alloy showed $1.60{\times}10^6{\Omega}cm^2$ which was higher than those of other Ti alloy. Polarization resistance of cell-cultured Ti-Ta alloy increased in compared with non-cell cultured Ti alloy.

Preparation and Actuation Performance of Ionic Polymer-Metal Composite Actuators Based on Nafion-Alumina Composite Membranes (나피온-알루미나 복합막을 사용한 이온성 폴리머-금속 복합체 작동기의 제작 및 성능 평가)

  • Lee, Jang-Woo;Kim, Woo-Sung;Yoo, Young-Tai
    • Polymer(Korea)
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    • v.33 no.4
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    • pp.377-383
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    • 2009
  • Ionic polymer-metal composite (IPMC) actuator generates bending actuation via ion/water flux to the cathode side under an electric field. Polyelectrolytes in IPMC should possess high water-retention capability, proton conductivity, and Young's modulus. In this study. for endowing IPMCs with these properties, Nafion-alumina composite membranes containing $\alpha$- or $\gamma$-aluminas of $4{\sim}8$ wt% were prepared. Mechanical moduli of Nafion-alumina composite membranes were $7{\sim}3$ MPa higher than that of Nafion, with the slight decrease in proton conductivity. At DC 3 V. the actuation performance of the Nafion-$\alpha$-alumina (8 wt%)-IPMC was superior to that of the typical Nafion-IPMC. exhibiting 2.7 times the displacement with an enhanced blocking force. The enhanced actuation performance with the Nafion-$\alpha$-alumina composite membranes was attributed to the higher proton conductivity, the elevated ion/water flux, and the lower interfacial electric resistance of platinum electrodes and membrane, compared with those containing $\gamma$-alumina.