• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.973-976
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• 2004

The results of numerous studies in III-V semiconductors show that sulfur treatment improves the electrical parameters of III-V compound devices. In this article, we examine the effects of sulfidation of HgCdTe surface on the interfacial characteristics of metal-ZnS-HgCdTe structures. Different from sulfidation in III-V material, S can not be act as an impurity because II-S compounds (ZnS, CdS) generally used as passivant for HgCdTe. Our studies of sulfur-treatment on HgCdTe surface show that sulfur agent forms the S- S, II-S bonds at the surface layer. These bonds are very effective to improve the electrical properties of ZnS layer on HgCdTe by reducing the possibility of native oxides formation. After the sulfidation process, MIS capacitors of HgCdTe show great improvement in electrical properties, such as low density of fixed charge and reduced hystereisis width.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.6-14
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• 2012

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

• Advances in environmental research
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• 제5권2호
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• pp.141-151
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• 2016

Large amounts of aluminum hydroxide ($Al(OH)_3$) exist in water purification sludge (WPS) because of the added aluminum coagulant in water treatment process. Notably, $Al(OH)_3$ is an amphoteric compound, can be dissolved in its basic condition using sodium hydroxide to form aluminate ions ($Al(OH)_4{^-}$). However, in a process in which pH is increasing, the humid acid can be dissolved easily from WPS and will inhibit the recovery and reuse of the dissolved aluminate ions. This study attempts to fix this problem by a novel approach to separate $Al(OH)_4{^-}$ ions using nanofiltration (NF) technology. Sludge impurity in a alkaline solution is retained by the NF membrane, such that the process recovers $Al(OH)_4{^-}$ ions, and significantly decreases the organic matter or heavy metal impurities in the permeate solution. The $Al(OH)_4{^-}$ ion is an alkaline substance. Experimental results confirm that a recovered coagulant of $Al(OH)_4{^-}$ ion can effectively remove kaolin particles from slightly acidic synthetic raw water.

• 한국재료학회지
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• 제9권7호
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• pp.715-723
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• 1999

마그네슘은 20여년간 자동차 산업에서 휠소재로 사용되어 왔다. 마그네슘 휠은 무게가 알루미늄 휠보다 25% 가벼워서 주행성이 우수하다. 이 연구의 목적은 사형주조 및 영구금형주조 공정에 의한 AZ91D 합금제 췰을 개발하는 것이다 보호개스$(SF_6+CO_2)$를 사용하는 비플럭스 용해기술을 적용하여 용탕의 산화와 불순물의 유입을 배제하였다 마그네슘 용탕은 가압식 펌프시스템을 사용하여 가열된 파이프를 통하여 모울드에 자동으로 공급된다. 열처리 및 인고트의 조성에 따른 AZ91B 합금제 휠의 기계적 특성을 조사하였다.

• 한국세라믹학회지
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• 제37권10호
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• pp.933-937
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• 2000

고기능성 전자재료용 TiO$_2$분말 및 박막제조에 사용되는 중간생성물인 TiCl$_4$는 99% 이상의 고순도가 요구된다. 고순도.미립의 TiO$_2$분말 및 TiCl$_4$는 황산법으로 제조한 저순도 TiO$_2$원료를 사용하여 염소화법으로 Ti-염화물 및 염화불순물로 제조한 후, 대부분의 염화불순물들은 3단계 과정을 거쳐 고순화 하였다. 대부분의 염화불순물은 분리.응축 및 분별증류로, VOCl$_3$는 mineral oil을 첨가하여 비등점을 변화시켜, 그리고 미량의 염화불순물은 열가수분해하여 침전시킨 후 유기용제 처리하여 제거하였다. 유기용제 처리는 TiO$_2$분말의 고순도화에 도움이 되었으며, 입자간의 응집을 적게 하여 TiO$_2$입자크기도 작아졌다. 또한 anatase에서 rutile 결정구조로의 전이온도도 낮아지는 부수적인 효과를 보였다.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1199-1203
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• 2012

Catalytic filters consisting of Ni nanoparticle and carbon fiber with different oxidation states of Ni (either metallic or oxidic) were prepared using a chemical vapor deposition process and various post-annealing steps. CO oxidation reactivity of each sample was evaluated using a batch type quartz reactor with a gas mixture of CO (500 mtorr) and $O_2$ (3 torr) at $300^{\circ}C$. Metallic and oxidic Ni showed almost the same CO oxidation reactivity. Moreover, the CO oxidation reactivity of metallic sample remained unchanged in the subsequently performed second reaction experiment. We suggested that metallic Ni transformed into oxidic state at the initial stage of the exposure to the reactant gas mixture, and Ni-oxide was catalytically active species. In addition, we found that CO oxidation reactivity of Ni-oxide surface was enhanced by increase in the $H_2O$ impurity in the reactor.

• 한국재료학회지
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• 제30권11호
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• pp.573-580
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• 2020

YAG (Yttrium Aluminum Garnet, Y₃Al₅O₁₂) has excellent plasma resistance and recently has been used as an alternative to Y₂O₃ as a chamber coating material in the semiconductor process. However, due to the presence of an impurity phase and difficulties in synthesis and densification, many studies on YAG are being conducted. In this study, YAG powder is synthesized by an organic-inorganic complex solution synthesis method using PVA polymer. The PVA solution is added to the sol in which the metal nitrate salts are dissolved, and the precursor is calcined into a porous and soft YAG powder. By controlling the molecular weight and the amount of PVA polymer, the effect on the particle size and particle shape of the synthesized YAG powder is evaluated. The sintering behavior of the YAG powder compact according to PVA type and grinding time is studied through an examination of its microstructure. Single phase YAG is synthesized at relatively low temperature of 1,000 ℃ and can be pulverized to sub-micron size by ball milling. In addition, sintered YAG with a relative density of about 98 % is obtained by sintering at 1,650 ℃.

• 한국세라믹학회지
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• 제35권10호
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• pp.1007-1013
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• 1998

The samples of Bi2Sr2Ca1-xNaxCu2O8+y with various carrier concentration were synthesized by substituting Na for Ca ion. The superconducting properties hall coefficients and X-ray powder diffraction were measur-ed the sampled. Single phase samples were obtained for 0$\leq$x<0.3 of Bi2Sr2Ca1-xNaxCu2O8+y In the single phase the critical temperature. {{{{ { T}_{c } }} and carrier concentration increase with the increase of Na concentration pass through a maximum and then decreases. In the range of x$\geq$0.7 to the Na doped samples however we observed the metal-semiconductor transition. The c-axis seemed to decrease and a and b-axes increase with increasing Na concentration in the single phase. Decreasing of c-axis while increasing x is due to the smaller size of {{{{ {Na}^{+1 } }} ions to the {{{{ { Ca}^{+2 } }} ions. In the range of x>0.3 however the trend becomes ambiguous due to the inclusion of the 10K phase and impurity phase.

• 보존과학회지
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• 제37권4호
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• pp.340-356
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• 2021

We have tried the experimental research of lost-wax casting to reconstruct Gilt-Bronze Pensive Bodhisattva; preliminary and reconstruction experiment based on ancient texts. Main object to reconstruct is Korean National Treasure No.83, Gilt-Bronze Pensive Bodhisattva (Maitreya), then we measure alloy ratio and casting method based on the scientific analysis. Other impurities were removed from the base metal components(copper : tin : lead) and their ratio was set to 95.5 : 6.5 : 3 where the ratios for tin and lead were increased by 2.5% each. The piece-mold casting method was used, and piece-mold casting experiments were carried out twice in this study but supplementary research on piece-mold casting was necessary. The microstructure was confirmed to be typical cast microstructure and the component analysis result was similar to that of the prior study. Analysis of the chemical composition is confirmed to copper, tin, lead, and zinc, and the chemical composition of the matrix was 87.8%Cu-7.5%Sn-2.7%Pb-2.1%Zn, and similar to previous experimental research. Also resulted in the detection of small impurity in Zn. Analysis of the mould revealed that the mould was fabricated by adding quartz and organic matter for structural stability, fire resistance, and air permeability. We expect that our research will contribute to provide base data for advanced researches in future.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.