• 한국전기전자재료학회논문지
• /
• 제20권1호
• /
• pp.86-91
• /
• 2007

Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

• Bulletin of the Korean Chemical Society
• /
• 제30권1호
• /
• pp.133-136
• /
• 2009

A newly designed Ag/$Ag^+$ reference electrode in a quartz tube with a tungsten tip junction (W-tip-Quartz- REF) was fabricated and its electrochemical performance was compared with a conventional Pyrex tube-based Ag/$Ag^+$ reference electrode (Py-REF). The results of the electrochemical potential measurements with the W-tip-Quartz- REF and the Py-REF in the LiCl-KCl eutectic melts for a wide temperature range proved that the oxide layer on the surface of the tungsten metal tip provided a high ionic conduction. Stability of our newly designed W-tip- Quartz-REF was tested by measuring a junction potential for 12 hours at 700${^{\circ}C}$. The results of the cyclic voltammetric measurement indicated that the Ag/$Ag^+$ reference electrode in the quartz tube with a tungsten tip junction can provide a good performance for a wide temperature range.

• 한국세라믹학회지
• /
• 제55권2호
• /
• pp.174-177
• /
• 2018

ZnO/Ag/ZnO multilayers were fabricated and their optical properties were investigated in terms of the micro-cavity effect in electroluminescent devices based on colloidal quantum dots. The top and bottom ZnO layers were formed by a sol-gel method while the middle Ag layer was deposited by thermal evaporation. After the fabrication of the ZnO/Ag/ZnO structure, the transmittance increased to 74%. When the oxide/metal/oxide multilayers were applied to quantum dot light-emitting diodes, the color purity was enhanced due to the narrower full width at half maximum.

• Journal of Welding and Joining
• /
• 제13권3호
• /
• pp.106-115
• /
• 1995

To know the bonding phenomena of Ti/Cu brazed joint, a characteristic of microstructures in bonding interlayer of vacuum brazed pure Ti to Cu has been studied in the temperature range from 1088 to 1133K for various bonding times using Ag-28wt%Cu filler metal. Also intermediate phases formed in bonded interlayer and behavior of layer growth have been investigated. The obtained results in this study are as follows: 1) Liquid insert metal width at the each brazing temperature was proportional to the square root of brazing time, and it was considered that the liquid insert metal width was controlled by the diffusion rate process of primary .alpha.-Cu formed at the Ti side. 2) Intermediate phases formed near the Ti interface were .betha.-Ti and intermetallic compounds TiCu, Ti$_{2}$Cu, Ti$_{3}$Cu, and TiCu. 3) .betha.-Ti formed in Ti base metal durig brazing transformed to lamellar structure, .alpha.-Ti + Ti$_{2}$Cu. The structure came from the eutectoil decomposition reaction in cooling. And the width of .betha.-Ti layer was proportional to the square root of brazing time, and it was considered that the growth of .betha.-Ti layer was controlled by interdiffusion rate process in .betha.-Ti. 4) The layer growth of TiCu, Ti$_{3}$Cu$_{4}$ and TiCu, phases formed near the Ti interface was linerface was linearly proportional to the brazing time, and it was considered that the layer growth of these phases was controlled by the chemical reaction rate at the interface.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1340_1341
• /
• 2009

In this report, high-resolution metal electrode patterning is demonstrated by using selective surface treatment and dip casting for low-cost printed electronic applications. On hydrophobic octadecyltrichlorosilane treated $SiO_2$ surface, deep UV irradiation was performed through a patterned quartz photomask to selectively control the surface energy of the $SiO_2$ layer. The deep UV irradiated region becomes hydrophilic and by dipping into Ag nano-ink, Ag patterns were formed on the surface. Using this patterning technique, line patterns and dot arrays having less than $10{\mu}m$ pitch were fabricated.

• 한국전기전자재료학회논문지
• /
• 제14권7호
• /
• pp.533-538
• /
• 2001

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.493-493
• /
• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.444-445
• /
• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.257.1-257.1
• /
• 2014

We investigated characteristics of ITO/Ag-Pd-Cu (APC)/ITO multilayer electrodes prepared by direct current magnetron sputtering for use as an anode in organic solar cells (OSCs). To optimize electrical properties of ITO/APC/ITO multilayer, we fabricated the ITO/APC/ITO multilayer at a fixed ITO thickness of 30 nm as a function of APC thickness. Compare to the surface of Ag layer on ITO, the APC had a smooth surface morphology. At optimized APC thickness of 12 nm, the ITO/APC/ITO multilayer exhibited a sheet resistance of $6{\Omega}/square$ and optical transmittance of 84.15% at a wavelength of 550 nm which is comparable to conventional ITO/Ag/ITO multilayer. However, the APC-based ITO multilayer showed a higher average transmittance in a visible region than the Ag-based ITO multilayer. The higher average transmittance of ITO/APC/ITO multilayer indicated the multilayer is suitable anode for organic solar cells with P3HT:PCBM active layer. OSCs fabricated on the optimized ITO/ACP/ITO multilayer exhibited a better performance with a fill factor of 64.815%, a short circuit current of $8.107mA/cm^2$, an open circuit voltage of 0.59 V, and power conversion efficiency (3.101%) than OSC with ITO/Ag/ITO multilayer (2.8%).

• 한국전기전자재료학회논문지
• /
• 제25권3호
• /
• pp.236-240
• /
• 2012

Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at $450^{\circ}C$ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.