• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.597-604
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• 1990

In Cubic ZrO2 crystal growth by Skull method, it was examined on effect of homonization on melt as keeping ZrO2(90mol%)-Y2O3(10mol%) melt with 1hr, 2hr, 4hrs, 8hrs, 16hrs, respectively. The optimum homonizing condition in this system was obtained by the examination between quality of grown crystals and soaking time of melt. It was obtained that the lower quality crystal could be produced in the longer holding melt than the optimum soaking time of melt in spite of the supposedly well homonized state, because the melt stability is sensibly dependent on the convective state of melt in skull method (cold crucible process).

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.21-25
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• 1998

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1667-1675
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• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.169-177
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• 1994

Dilute Al-Cu and Al-Mg alloys were solidified unidirectionally upward by Bridgman method. It is necessary that solute concentration of initial melt is uniform to be able to control the concentration of crystal. When solute concentration is not uniform, it can cause unusual macro-segregation in grown solid. A non-steady state solidification was observed where the solute concentration in the grown solid decreased with the progress of solidification, when a dilute Al-Cu melt with positive axial temeprature gradient was solidified. This was caused by leaking out of Cu-rich melt into the gap between ingot and crucible during melt-down and its sedimentation after complete melting. In the case of Al-Mg alloy, the solute concentration has a minimum in the middle of grown specimen because Mg-rich melt flowed down the gap between ingot and crucible and floated after complete melting. Uniform initial melt concentration can be achieved by the homogenization of the ingot or by the absence of the gap between ingot and crucible.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.381-388
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• 2000

The temperature and velocity fluctuations occurred by the baroclinic instability in the melt for Czochralski crystal growth method were experimentally investigated. Wood's metal, which has similar Pr number to the silicon melt, was used as the working fluid and azimuthal velocity was measured using incorporated magnet probe. The azimuthal velocities near the free surface are faster than velocities near the bottom and the rotational velocities near the model crystal become very fast. The results of measured temperature fluctuation as increasing rotation rate were shown that baroclinic instability occurred at the region of Ro<1.01, Ta>$9.63{\times}10^8$. In these region, the fluctuations of temperature and velocity have the same frequency.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1308-1318
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• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Coupled systems mechanics
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• v.5 no.4
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• pp.341-353
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• 2016

Manufactures of multi-crystalline silicon ingots by means of the directional solidification system (DSS) is important to the solar photovoltaic (PV) cell industry. The quality of the ingots, including the grain size and morphology, is highly related to the shape of the crystal-melt interface during the crystal growth process. We performed numerical simulations to analyze the thermo-fluid field and the shape of the crystal-melt interface both for steady conditions and transient processes. The steady simulations are first validated and then applied to improve the hot zone design in the furnace. The numerical results reveal that, an additional guiding plate weakens the strength of vortex and improves the desired profile of the crystal-melt interface. Based on the steady solutions at an early stage, detailed transient processes of crystal growth can be simulated. Accuracy of the results is supported by comparing the evolutions of crystal heights with the experimental measurements. The excellent agreements demonstrate the applicability of the present numerical methods in simulating a practical and complex system of directional solidification system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.149-156
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• 1999

An experimental simulation on the flow in Czochralski melt using a cold model was carried out to obtain the velocities of fluid flow which affects the oxygen concentration of Czochralski crystal growing system. Low melting point Woods metal with similar Pr number to the silicon melt was adopted as a working fluid. Local flow velocities at numerous positions in the melt were simulataneously measured in three dimension using incorporated magnet probe. The measured velocity field showed a non-axisymmetric pattern dominated by natural convection. The analysis on the correlation between data set of temperatures simultaneously measured at two melt positions showed that the values of correlation coefficients were smaller than those of previous study on the small size of silicon melt and these phenomena are believed to occur because turbulent behavior becomes stronger in large size of the melt.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.306-317
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• 1995

Abstract Gallium arsenide crystal is usually grown from the melt by the horizontal Bridgman method. We constructed pseudo - steady - state model for crystal growth of GaAs which inclue melt, crystal and the free interface. Mathematical equations of the model were solved for flow, temperature, and concentration field in the melt and temperature field in the crystal. The location and shape of the interface were also solved simultaneously. In 2 - dimensional model, the shape of the interface is flat with adiabatic thermal boundary condition, but it becomes curved with completely conducting thermal boundary condition. In 3 - dimensional model, the interface is less curved than 2 - dimensional case and the flow intensity is similar to that of 2 - dimensional case. With the increase of flow intensity vertical segregation shows maximum value in both 2 - and 3 - D model. However, the maximum value occurs in lower flow intensity in 2 - D model because the interface is more curved for the same flow intensity.