• Journal of computational fluids engineering
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• v.3 no.1
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• pp.100-107
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• 1998

A numerical analysis of thermal stress over temperature variations near the crystal-melt interface is carried out for a floating-zone growth of Cadmium Telluride (CdTe). Thermocapillary convection determines crystal-melt interfacial shape and signature of temperature in the crystal. Large temperature gradients near the crystal-melt interface yield excessive thermal stresses in a crystal, which affect the dislocations of the crystal. Based on the assumption that the crystal is elastic and isotropic, thermal stresses in a crystal are computed and the effects of operating conditions are investigated. The results show that the extreme thermal stresses are concentrated near the interface of a crystal and the radial and the tangential stresses are the dominant ones. Concentrated heating profile increases the stresses within the crystal, otherwise, the pulling rate decreases the stresses.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.23-33
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• 1991

Mn - Zn Ferrite has the natural characteristics of incongruent melting and the zinc oxide evaporation while the crystal is being grown. As a result of these, it comes into existence to be a non-uniform distribution of cations along the crystal growth axis and also Pt particles are usually precipitated into the crystals in Bridgman method since the melt zone is maintained for a long time in the crucible. These have bad effects on the magnetic properties of ferrites. But, to overcome these faults and then acquire the better single crystals. new modified growth method was developed and the growth factors were investigated as following: melt height in the crucible, surface tension and density of melt, the behavior of melt at interface, the shapes of crucible and solid -liquid interface, powder feeding rate, and the crystal growing speed. In additon, when we analyzed the compositional fluctuations of grown crystals, they were supressed within 1.5 mol% $Fe_20_3$, 2 mol% MnO, ZnO respectively with comparing to initial composition of crystal and the microstructures of crystals on the(110) plane were observed by optical microscope through the chemical etching technique and the magnetic properties were determined.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.19-23
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• 2019

A large grain YBCO bulk superconductor is fabricated by the top-seeded melt growth (TSMG) method. In the TSMG process, the seed crystal is placed on the top surface of a partially melted compact and therefore the seed crystal is frequently tilted during the melt process due to intrinsic unstable nature of Y211 particle +liquid phase mixture. In this work, we report the successful growth of single-domain YBCO bulk superconductors by a bottom-seeded melt growth (BSMG) method. Investigations on the trapped magnetic field and the microstructures of the synthesized specimens show that a bottom-seeded melt growth method has hardly affected on the crystal growth behavior, the microstructure development and the magnetic properties of the large grain YBCO bulk superconductors. The bottom-seeded melt growth method is clearly beneficial for the stable control of seed orientation through the melt process for the fabrication of a large grain YBCO bulk superconductor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.454-458
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• 1999

Hydrodynamic Thermal Capilary Model developed previously has been modified to study the transport phenomena in the Czochralski process. Our analysis is focused on the heat transfer in the system, convection in the melt phase, and the meniscus and interface shape. Four major forces drive melt flow in the crucible, which include thermal buoyancy force in the melt, thermocapillary force along the curved meniscus, crucible rotation and crystal rotation. Individual flow mechanism due to each driving force has been examined to determine its interaction with the meniscus and interface shape. A nominal 4-inch-diameter silicon crystal growth process is chosen as a subject for analysis. Heater temperature profile for constant diameter crystal is also present as a function of crystal height or fraction solidified.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.187-196
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• 1997

Oxygen transfer in silicon melts during crystal growth under vertical magnetic fields is investigated numeriaclly and experimentally. A three-dimensional numerical simulation, including melt convection and oxygen transport, is carried out to understand how oxygen transfers in the melt under magnetic fields. Oxygen concentrations in single silicon crystals grown from the melt under these magnetic fields are experimentally measured by using an infrared absoption technique. The rusults obtained are compared to results from a numerical simualtion. An anomalous increase is observed in the oxygen concentration of the grown crystals under a magnetic field of about 0/03 tesla. The cause of this anomaly is identified as Benard instability, since the temperature at the bottom of the crucible is higher than that at interface. When the temperature at the bottom is decreased, the Benard cell can be removed, and a monotonical decrease in the oxygen concentration in the single crystals can be observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.381-383
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• 1999

First topic of this paper aims to clarify how oxygen and heat transfer in silicon melt under cusp-shaped magnetic fields. We obtained asymmetric temperature distribution by using time dependent and three-dimensional calculation. Second topic is study on molecular dynamics simulation, which was carried out to estimate diffusion constants of oxygen in silicon melt.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.193-198
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• 2011

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.140-145
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• 2008

Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.41-46
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• 1997

The change of flow field and the effects of convective heat transfer on the shape and location of melt/crystal interface has been studied during the crystal growth by the heat exchanger method. Although the thermal structure is stable in the crucible, the flow due to the natural convection driven by radial temperature gradient is significant, because the thermal stability is broken by the hemispherical melt/crystal interface shape. The maximum interface deflection with convection is smaller than without and the convective heat transfer should be considered to simulate the heat transfer process of heat exchanger method rigorously.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.179-181
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• 1997

When grown the oxide single crystal including Li-ion, optimum oxygen condition is needed. Color and crack are caused in single crystal according too the change in the condition of the oxygen. LiTaO₃ crystals grown from off-composition of congruent melt composition under oxygen deficieny condition didn't generate any crack. LiNbO₃. LiTaO₃ crystals grown from congruent melt composition under optimum oxygen condition caused pale yellow color or colorless with no crack. Color gradually became colorless and generated cracks according to Oxygen excess.